APTGF50H120TG ADPOW | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 6

Technical content

Features

  • Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated
  • Kelvin emitter for easy drive
  • Very low stray inductance - Symmetrical design - Lead frames for power connections
  • Internal thermistor for temperature monitoring
  • High level of integration Benefits
  • Outstandi ng performance at hi gh frequency operation
  • Stable temperature behavior
  • Very rugged
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • Solderable terminals both for power and signal for easy PCB mounting
  • Easy paralleling due to positive TC of VCEsat
  • Low profile
  • RoHS compliant Absolute maximum ratings These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. VBUS OUT 1 OUT2 0/VBUS NTC2 NTC1 OUT1 OUT2 NTC1 NTC2 VBUS 0/VBUS Symbol Parameter Ma x ratings Unit VCES Collector - Emitter Breakdown Voltage 1200 V Tc = 25°C 75 IC Continuous Collector Current Tc = 80°C 50 ICM Pulsed Collector Current T c = 25°C 150 A VGE Gate – Emitter Voltage ±20 V PD Maximum Power Dissipation Tc = 25°C 312 W RBSOA Reverse Bias Safe Operating Area T j = 150°C 100A @ 1200V VCES = 1200V IC = 50A @ Tc = 80°C Full - Bridge NPT IGBT Power Module

APTGF50H120TG – Rev 2 November, 2005 APT website – http://www.advancedpower.com 2 - 6 All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit Tj = 25°C 500 ICES Zero Gate Voltage Collector Current VGE = 0V VCE = 1200V Tj = 125°C 2500 µA Tj = 25°C 3.2 3.7 VCE(sat) Collector Emitter Saturation Voltage VGE =15V IC = 50A Tj = 125°C 4.0 V VGE(th) Gate Threshold Voltage V GE = VCE, IC = 1 mA 4.5 6.5 V IGES Gate – Emitter Leakage Current V GE = ±20 V, VCE = 0V 100 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 3450 Coes Output Capacitance 330 Cres Reverse Transfer Capacitance VGE = 0V VCE = 25V f = 1MHz 220 pF Qg Total gate Charge 330 Qge Gate – Emitter Charge 35 Qgc Gate – Collector Charge VGS = 15V VBus = 600V IC = 50A 200 nC Td(on) Turn-on Delay Ti me 35 Tr Rise Time 65 Td(off) Turn-off Delay Time 320 Tf Fall Time 30 ns Eon Turn-on Switching Energy 5.4 Eoff Turn-off Switching Energy Inductive Switching (25°C) VGE = 15V VBus = 600V IC = 50A RG = 5 Ω 2.3 mJ Td(on) Turn-on Delay Ti me 35 Tr Rise Time 65 Td(off) Turn-off Delay Time 360 Tf Fall Time 40 ns Eon Turn-on Switching Energy 6.9 Eoff Turn-off Switching Energy Inductive Switching (125°C) VGE = 15V VBus = 600V IC = 50A RG = 5 Ω 3.05 mJ Reverse diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 1200 V Tj = 25°C 350 IRM Maximum Reverse Leakage Current V R=1200V Tj = 125°C 600 µA IF DC Forward Current Tc = 70°C 60 A IF = 60A 2.0 2.5 IF = 120A 2.3 VF Diode Forward Voltage IF = 60A T j = 125°C 1.8 V Tj = 25°C 370 trr Reverse Recovery Time Tj = 125°C 500 ns Tj = 25°C 1320 Qrr Reverse Recovery Charge IF = 60A VR = 800V di/dt =400A/µs Tj = 125°C 6900 nC

APTGF50H120TG – Rev 2 November, 2005 APT website – http://www.advancedpower.com 3 - 6 Thermal and package characteristics Symbol Characteristic Min Typ Max Unit IGBT 0.4 RthJC Junction to Case Thermal Resistance Diode 0.65 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ Operating junction temperature range -40 150 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 100 Torque Mounting torque To Heatsink M5 1.5 4.7 N.m Wt Package Weight 160 g Temperature sensor NTC (see application note APT0406 on www.advancedpower.com for more information). Symbol Characteristic Min Typ Max Unit R25 Resistance @ 25°C 50 kΩ B 25/85 T 25 = 298.15 K 3952 K  − TT B RRT 11exp ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS : T: Thermistor temperature RT: Thermistor value at T

APTGF50H120TG – Rev 2 November, 2005 APT website – http://www.advancedpower.com 4 - 6 Typical Performance Curve Output characteristics (VGE=15V) TJ=25°C TJ=125°C 120 160 200 02468 Ic, Collector Current (A) VCE, Collector to Emitter Voltage (V) 250µs Pulse Test < 0.5% Duty cycle Output Characteristics (VGE=10V) TJ=25°C TJ=125°C 01234 Ic, Collector Current (A) VCE, Collector to Emitter Voltage (V) 250µs Pulse Test < 0.5% Duty cycle Transfer Characteristics TJ=25°C TJ=25°C TJ=125°C 100 150 200 250 300 048 1 2 1 6 VGE, Gate to Emitter Voltage (V) Ic, Collector Current (A) 250µs Pulse Test < 0.5% Duty cycle Gate Charge VCE=240V VCE=600V VCE=960V 0 50 100 150 200 250 300 350 Gate Charge (nC) VGE, Gate to Emitter Voltage (V) IC = 50A TJ = 25°C Ic=100A Ic=50A Ic=25A 9 1 01 11 21 31 41 51 6 VGE, Gate to Emitter Voltage (V) On state Voltage vs Gate to Emitter Volt. VCE, Collector to Emitter Voltage (V) TJ = 25°C 250µs Pulse Test < 0.5% Duty cycle Ic=100A Ic=50A Ic=25A - 5 0 - 2 50 2 55 07 5 1 0 0 1 2 5 TJ, Junction Temperature (°C) VCE, Collector to Emitter Voltage (V) On state Voltage vs Junction Temperature 250µs Pulse Test < 0.5% Duty cycle V GE = 15V 0.70 0.75 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 -50 -25 0 25 50 75 100 125 TJ, Junction Temperature (°C) Collector to Emitter Breakdown Voltage (Normalized) Breakdown Voltage vs Junction Temp. - 5 0- 2 5 0 2 5 5 0 7 51 0 0 1 2 5 1 5 0 TC, Case Temperature (°C) Ic, DC Collector Current (A) DC Collector Current vs Case Temperature

APTGF50H120TG – Rev 2 November, 2005 APT website – http://www.advancedpower.com 5 - 6 VGE = 15V 0 2 55 07 5 1 0 0 1 2 5 ICE, Collector to Emitter Current (A) td(on), Turn-On Delay Time (ns) Turn-On Delay Time vs Collector Current VCE = 600V RG = 5Ω VGE=15V, TJ=25°C VGE=15V, TJ=125°C 200 250 300 350 400 0 2 55 07 5 1 0 0 1 2 5 ICE, Collector to Emitter Current (A) Turn-Off Delay Time vs Collector Current td(off), Turn-Off Delay Time (ns) VCE = 600V RG = 5Ω VGE=15V 100 140 180 0 25 50 75 100 125 ICE, Collector to Emitter Current (A) tr, Rise Time (ns) Current Rise Time vs Collector Current VCE = 600V RG = 5Ω TJ = 25°C TJ = 125°C 0 25 50 75 100 125 ICE, Collector to Emitter Current (A) tf, Fall Time (ns) Current Fall Time vs Collector Current VCE = 600V, VGE = 15V, RG = 5Ω TJ=25°C, VGE=15V TJ=125°C, VGE=15V 0 2 55 07 5 1 0 0 1 2 5 ICE, Collector to Emitter Current (A) Turn-On Energy Loss vs Collector Current Eon, Turn-On Energy Loss (mJ) VCE = 600V RG = 5Ω TJ = 25°C TJ = 125°C 0 2 55 07 5 1 0 0 1 2 5 ICE, Collector to Emitter Current (A) Eoff, Turn-off Energy Loss (mJ) Turn-Off Energy Loss vs Collector Current VCE = 600V VGE = 15V RG = 5Ω Eon, 50A Eoff, 50A Eon, 25A Eoff, 25A 0 1 02 03 04 05 0 Gate Resistance (Ohms) Switching Energy Losses (mJ) Switching Energy Losses vs Gate Resistance VCE = 600V VGE = 15V TJ= 125°C Eon, 50A Eoff, 50A Eon, 25A Eoff, 25A 0 25 50 75 100 125 TJ, Junction Temperature (°C) Switching Energy Losses (mJ) Switching Energy Losses vs Junction Temp. VCE = 600V VGE = 15V RG = 5Ω

APTGF50H120TG – Rev 2 November, 2005 APT website – http://www.advancedpower.com 6 - 6 Cies Cres Coes 100 1000 10000 0 1 02 03 04 05 0 C, Capacitance (pF) Capacitance vs Collector to Emitter Voltage VCE, Collector to Emitter Voltage (V) 100 120 0 400 800 1200 IC, Collector Current (A) Reverse Bias Safe Operating Area VCE, Collector to Emitter Voltage (V) 0.9 0.7 0.5 0.3 0.1

0.05 Single Pulse

0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 Rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Hard switching ZCS ZVS 100 120 10 20 30 40 50 60 I C, Collector Current (A) Operating Frequency vs Collector CurrentFmax, Operating Frequency (kHz) VCE = 600V D = 50% RG = 5Ω TJ = 125°C TC= 75°C APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.