APTGF50DH60TG

APTGF50DH60TG MICROSEMI | Alldatasheet

Document overview

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• PDF pages: 6

Technical content

Features

• Non Punch Through (NPT) Fast IGBT® - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance - Symmetrical design - Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration Benefits
• Outstandi ng performance at hi gh frequency operation
• Stable temperature behavior
• Very rugged
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for easy PCB mounting
• Easy paralleling due to positive TC of VCEsat
• Low profile
• RoHS compliant Asymmetrical - Bridge NPT IGBT Power Module

APTGF50DH60TG – Rev 1 July, 2006 www.microsemi.com 2 - 6 All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit Tj = 25°C 250 ICES Zero Gate Voltage Collector Current VGE = 0V VCE = 600V Tj = 125°C 500 µA Tj = 25°C 1.7 2.0 2.45 VCE(sat) Collector Emitter Saturation Voltage VGE =15V IC = 50A Tj = 125°C 2.2 V VGE(th) Gate Threshold Voltage V GE = VCE , IC = 1mA 4 6 V IGES Gate – Emitter Leakage Current V GE = 20V, VCE = 0V 400 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 2200 Coes Output Capacitance 323 Cres Reverse Transfer Capacitance VGE = 0V VCE = 25V f = 1MHz 200 pF Qg Total gate Charge 166 Qge Gate – Emitter Charge 20 Qgc Gate – Collector Charge VGE = 15V VBus = 300V IC = 50A 100 nC Td(on) Turn-on Delay Ti me 40 Tr Rise Time 9 Td(off) Turn-off Delay Time 120 Tf Fall Time Inductive Switching (25°C) VGE = 15V VBus = 400V IC = 50A RG = 2.7Ω 12 ns Td(on) Turn-on Delay Ti me 42 Tr Rise Time 10 Td(off) Turn-off Delay Time 130 Tf Fall Time Inductive Switching (125°C) VGE = 15V VBus = 400V IC = 50A RG = 2.7Ω 21 ns Eon Turn-on Switchi ng Energy T j = 125°C 0.5 Eoff Turn-off Switching Energy VGE = 15V VBus = 400V IC = 50A RG = 2.7Ω Tj = 125°C 1 mJ Diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 600 V Tj = 25°C 250 IRM Maximum Reverse Leakage Current V R=600V Tj = 125°C 500 µA IF DC Forward Current Tc = 70°C 60 A IF = 60A 1.6 1.8 IF = 120A 1.9 VF Diode Forward Voltage IF = 60A T j = 125°C 1.4 V Tj = 25°C 130 trr Reverse Recovery Time Tj = 125°C 170 ns Tj = 25°C 220 Qrr Reverse Recovery Charge IF = 60A VR = 400V di/dt =200A/µs Tj = 125°C 920 nC

APTGF50DH60TG – Rev 1 July, 2006 www.microsemi.com 3 - 6 Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic Min Typ Max Unit R25 Resistance @ 25°C 50 kΩ B 25/85 T 25 = 298.15 K 3952 K  − TT B RRT 11exp Thermal and package characteristics Symbol Characteristic Min Typ Max Unit IGBT 0.5 RthJC Junction to Case Thermal Resistance Diode 0.9 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ Operating junction temperature range -40 150 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 100 Torque Mounting torque To heatsink M5 2.5 4.7 N.m Wt Package Weight 160 g ALL DIMENSIONS MARKED " * " ARE T OLERENCED AS : See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com T: Thermistor temperature RT: Thermistor value at T

APTGF50DH60TG – Rev 1 July, 2006 www.microsemi.com 4 - 6 Typical Performance Curve Output characteristics (VGE=15V) TJ=-55°C TJ=25°C TJ=125°C 100 150 01234 Ic, Collector Current (A) VCE, Collector to Emitter Voltage (V) 250µs Pulse Test < 0.5% Duty cycle Transfer Characteristics TJ=-55°CTJ=25°C TJ=125°C 100 125 150 0123456789 1 0 V GE, Gate to Emitter Voltage (V) Ic, Collector Current (A) 250µs Pulse Test < 0.5% Duty cycle Ic=100A Ic=50A Ic=25A 6 8 10 12 14 16 V GE, Gate to Emitter Voltage (V) VCE, Collector to Emitter Voltage (V) On state Voltage vs Gate to Emitter Volt. TJ = 25°C 250µs Pulse Test < 0.5% Duty cycle Ic=100A Ic=50A Ic=25A 0.5 1.5 2.5 3.5 -50 -25 0 25 50 75 100 125 TJ, Junction Temperature (°C) VCE, Collector to Emitter Voltage (V) On state Voltage vs Junction Temperature 250µs Pulse Test < 0.5% Duty cycle V GE = 15V 0.70 0.80 0.90 1.00 1.10 1.20 - 5 0 - 2 50 2 55 07 5 1 0 0 1 2 5 TJ, Junction Temperature (°C) Collector to Emitter Breakdown Voltage (Normalized) Breakdown Voltage vs Junction Temp. -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Ic, DC Collector Current (A) DC Collector Current vs Case Temperature Gate Charge VCE=120V VCE=300V VCE=480V 0 2 55 07 5 1 0 0 1 2 5 1 5 0 1 7 5 2 0 0 Gate Charge (nC) VGE, Gate to Emitter Voltage (V) IC = 50A TJ = 25°C Output Characteristics (VGE=10V) TJ=-55°C TJ=25°C TJ=125°C 100 150 01234 Ic, Collector Current (A) VCE, Collector to Emitter Voltage (V) 250µs Pulse Test < 0.5% Dut y cycle

APTGF50DH60TG – Rev 1 July, 2006 www.microsemi.com 5 - 6 VGE = 15V 0 25 50 75 100 125 150 I CE, Collector to Emitter Current (A) td(on), Turn-On Delay Time (ns) Turn-On Delay Time vs Collector Current Tj = 125°C VCE = 400V RG = 2.7Ω VGE=15V, TJ=25°C VGE=15V, TJ=125°C 100 125 150 175 200 0 25 50 75 100 125 150 ICE, Collector to Emitter Current (A) td(off), Turn-Off Delay Time (ns) Turn-Off Delay Time vs Collector Current VCE = 400V RG = 2.7Ω VGE=15V, TJ=125°C 0 2 55 07 5 1 0 0 1 2 5 1 5 0 I CE, Collector to Emitter Current (A) tr, Rise Time (ns) Current Rise Time vs Collector Current VCE = 400V RG = 2.7Ω TJ = 25°C TJ = 125°C 0 2 55 07 5 1 0 0 1 2 5 1 5 0 ICE, Collector to Emitter Current (A) tf, Fall Time (ns) Current Fall Time vs Collector Current VCE = 400V, VGE = 15V, RG = 2.7Ω TJ=125°C, VGE=15V 0.5 1.5 0 25 50 75 100 125 150 ICE, Collector to Emitter Current (A) Eon, Turn-On Energy Loss (mJ) Turn-On Energy Loss vs Collector Current VCE = 400V RG = 2.7Ω TJ = 125°C 0.5 1.5 2.5 0 2 55 07 5 1 0 0 1 2 5 1 5 0 ICE, Collector to Emitter Current (A) Eoff, Turn-off Energy Loss (mJ) Turn-Off Energy Loss vs Collector Current VCE = 400V VGE = 15V RG = 2.7Ω Eon, 50A Eon, 50A Eoff, 50A 0.5 1.5 2.5 0 5 10 15 20 25 Gate Resistance (Ohms) Switching Energy Losses vs Gate ResistanceSwitching Energy Losses (mJ) VCE = 400V VGE = 15V TJ= 125°C 100 120 0 200 400 600 IC, Collector Current (A) Reverse Bias Safe Operating Area VCE, Collector to Emitter Voltage (V)

APTGF50DH60TG – Rev 1 July, 2006 www.microsemi.com 6 - 6 Cies Cres Coes 100 1000 10000 0 1 02 03 04 05 0 C, Capacitance (pF) Capacitance vs Collector to Emitter Voltage VCE, Collector to Emitter Voltage (V) 0.9 0.7 0.5 0.3 0.1

0.05 Single Pulse

0.1 0.2 0.3 0.4 0.5 0.6 Rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Operating Frequency vs Collector Current hard switching ZC SZVS 120 160 200 240 0 2 04 06 08 0 1 0 0 IC, Collector Current (A) Fmax, Operating Frequency (kHz) VCE = 400V D = 50% RG = 2.7Ω TJ = 125°C TC= 75°C Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.