APTGF50A120T ADPOW | Alldatasheet
Document overview
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Technical content
Features
/g183/g32Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated /g183/g32Kelvin emitter for easy drive /g183/g32Very low stray inductance - Symmetrical design - Lead frames for power connections /g183/g32Internal thermistor for temperature monitoring /g183/g32High level of integration Benefits /g183/g32Outstanding performance at high frequency operation /g183/g32Stable temperature behavior /g183/g32Very rugged /g183/g32Direct mounting to heatsink (isolated package) /g183/g32Low junction to case thermal resistance /g183/g32Solderable terminals both for power and signal for easy PCB mounting /g183/g32Easy paralleling due to positive TC of VCEsat /g183/g32Low profile Absolute maximum ratings These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Follow ed. VBUS OUT NTC2 0/VB US NTC1 OUT OUT NTC2 VBUS NTC1 0/VBUS Symbol Parameter Max ratings Unit VCES Collector - Emitter Breakdown Voltage 1200 V Tc = 25°C 75 IC Continuous Collector Current Tc = 80°C 50 ICM Pulsed Collector Current T c = 25°C 150 A VGE Gate – Emitter Voltage ±20 V PD Maximum Power Dissipation Tc = 25°C 312 W RBSOA Reverse Bias Safe Operating Area T j = 150°C 150A @ 1200V VCES = 1200V IC = 50A @ Tc = 80°C Phase leg NPT IGBT Power Module
APTGF50A120T – Rev 1 March, 2004 APT website – http://www.advancedpower.com 2-6 All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit BVCES Collector - Emitter Breakdown Voltage V GE = 0V, IC = 500 µA 1200 V Tj = 25°C 500 ICES Zero Gate Voltage Collector Current VGE = 0V VCE = 1200V Tj = 125°C 2500 µA Tj = 25°C 3.2 3.7 VCE(on) Collector Emitter on Voltage VGE =15V IC = 50A Tj = 125°C 4.0 V VGE(th) Gate Threshold Voltage V GE = VCE, IC = 1 mA 4.5 6.5 V IGES Gate – Emitter Leakage Current V GE = ±20 V, VCE = 0V 100 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 3450 Coes Output Capacitance 330 Cres Reverse Transfer Capacitance VGE = 0V VCE = 25V f = 1MHz 220 pF Qg Total gate Charge 330 Qge Gate – Emitter Charge 35 Qgc Gate – Collector Charge VGS = 15V VBus = 600V IC = 50A 200 nC Td(on) Turn-on Delay Time 35 Tr Rise Time 65 Td(off) Turn-off Delay Time 320 Tf Fall Time 30 ns Eon Turn-on Switching Energy /g117 5.4 Eoff Turn-off Switching Energy /g118 Inductive Switching (25°C) VGE = 15V VBus = 600V IC = 50A RG = 5 /g87 2.3 mJ Td(on) Turn-on Delay Time 35 Tr Rise Time 65 Td(off) Turn-off Delay Time 360 Tf Fall Time 40 ns Eon Turn-on Switching Energy /g117 6.9 Eoff Turn-off Switching Energy /g118 Inductive Switching (125°C) VGE = 15V VBus = 600V IC = 50A RG = 5 /g87 3.05 mJ Reverse diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit IF(AV) Maximum Average Forward Current 50% duty cycle Tc = 70°C 60 A IF = 60A 2.0 2.5 IF = 120A 2.3 VF Diode Forward Voltage IF = 60A T j = 125°C 1.8 V Tj = 25°C 370 trr Reverse Recovery Time IF = 60A VR = 800V di/dt =400A/µs Tj = 125°C 500 ns Tj = 25°C 1320 Qrr Reverse Recovery Charge IF = 60A VR = 800V di/dt =400A/µs Tj = 125°C 6900 nC /g117 Eon includes diode reverse recovery /g118 In accordance with JEDEC standard JESD24-1
APTGF50A120T – Rev 1 March, 2004 APT website – http://www.advancedpower.com 3-6 Thermal and package characteristics Symbol Characteristic Min Typ Max Unit IGBT 0.4 RthJC Junction to Case Diode 0.65 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ Operating junction temperature range -40 150 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 100 Torque Mounting torque To Heatsink M5 4.7 N.m Wt Package Weight 160 g Temperature sensor NTC Symbol Characteristic Min Typ Max Unit R25 Resistance @ 25°C 68 k/g87 B 25/85 T 25 = 298.16 K 4080 K /g250 /g251 /g249 /g234 /g235 /g233 /g247/g247 /g248 /g246 /g231/g231 /g232 /g230/g45 /g61 TTB RR T 11exp Package outline T: Thermistor temperature RT: Thermistor value at T
APTGF50A120T – Rev 1 March, 2004 APT website – http://www.advancedpower.com 4-6 Typical Performance Curve Output characteristics (VGE=15V) TJ=25°C TJ=125°C 120 160 200 02468 Ic, Collector Current (A) VCE, Collector to Emitter Voltage (V) 250µs Pulse Test < 0.5% Duty cycle Output Characteristics (VGE=10V) TJ=25°C TJ=125°C 01234 Ic, Collector Current (A) VCE, Collector to Emitter Voltage (V) 250µs Pulse Test < 0.5% Duty cycle Transfer Characteristics TJ=25°C TJ=125°C 100 150 200 250 300 048 1 2 1 6 VGE, Gate to Emitter Voltage (V) Ic, Collector Current (A) 250µs Pulse Test < 0.5% Duty cycle Gate Charge VCE=240V VCE=600V VCE=960V 0 50 100 150 200 250 300 350 Gate Charge (nC) VGE, Gate to Emitter Voltage (V) IC = 50A TJ = 25°C Ic=100A Ic=50A Ic=25A 9 1 01 11 21 31 41 51 6 V GE, Gate to Emitter Voltage (V) On state Voltage vs Gate to Emitter Volt. VCE, Collector to Emitter Voltage (V) TJ = 25°C 250µs Pulse Test < 0.5% Duty cycle Ic=100A Ic=50A Ic=25A -50 -25 0 25 50 75 100 125 T J, Junction Temperature (°C) VCE, Collector to Emitter Voltage (V) On state Voltage vs Junction Temperature 250µs Pulse Test < 0.5% Duty cycle VGE = 15V 0.70 0.75 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 -50 -25 0 25 50 75 100 125 T J, Junction Temperature (°C) Collector to Emitter Breakdown Voltage (Normalized) Breakdown Voltage vs Junction Temp. - 5 0 - 2 5 0 2 55 07 5 1 0 0 1 2 5 1 5 0 T C, Case Temperature (°C) Ic, DC Collector Current (A) DC Collector Current vs Case Temperature
APTGF50A120T – Rev 1 March, 2004 APT website – http://www.advancedpower.com 5-6 VGE = 15V 0 25 50 75 100 125 I CE, Collector to Emitter Current (A) td(on), Turn-On Delay Time (ns) Turn-On Delay Time vs Collector Current VCE = 600V RG = 5Ω VGE=15V, TJ=25°C VGE=15V, TJ=125°C 200 250 300 350 400 0 25 50 75 100 125 ICE, Collector to Emitter Current (A) Turn-Off Delay Time vs Collector Current td(off), Turn-Off Delay Time (ns) VCE = 600V RG = 5Ω VGE=15V 100 140 180 0 25 50 75 100 125 I CE, Collector to Emitter Current (A) tr, Rise Time (ns) Current Rise Time vs Collector Current VCE = 600V RG = 5Ω TJ = 25°C TJ = 125°C 0 2 55 07 5 1 0 0 1 2 5 I CE, Collector to Emitter Current (A) tf, Fall Time (ns) Current Fall Time vs Collector Current VCE = 600V, VGE = 15V, RG = 5Ω TJ=25°C, VGE=15V TJ=125°C, VGE=15V 0 25 50 75 100 125 ICE, Collector to Emitter Current (A) Turn-On Energy Loss vs Collector Current Eon, Turn-On Energy Loss (mJ) VCE = 600V RG = 5Ω TJ = 25°C TJ = 125°C 0 2 55 07 5 1 0 0 1 2 5 I CE, Collector to Emitter Current (A) Eoff, Turn-off Energy Loss (mJ) Turn-Off Energy Loss vs Collector Current VCE = 600V VGE = 15V RG = 5Ω Eon, 50A Eoff, 50A Eon, 25A Eoff, 25A 0 1 02 03 04 05 0 Gate Resistance (Ohms) Switching Energy Losses (mJ) Switching Energy Losses vs Gate Resistance VCE = 600V VGE = 15V TJ= 125°C Eon, 50A Eoff, 50A Eon, 25A Eoff, 25A 0 25 50 75 100 125 TJ, Junction Temperature (°C) Switching Energy Losses (mJ) Switching Energy Losses vs Junction Temp. VCE = 600V VGE = 15V RG = 5Ω
APTGF50A120T – Rev 1 March, 2004 APT website – http://www.advancedpower.com 6-6 Cies Cres Coes 100 1000 10000 0 1 02 03 04 05 0 C, Capacitance (pF) Capacitance vs Collector to Emitter Voltage VCE, Collector to Emitter Voltage (V) 100 120 140 160 0 400 800 1200 IC, Collector Current (A) Minimum Switching Safe Operating Area VCE, Collector to Emitter Voltage (V) 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 Rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 10 20 30 40 50 60 I C, Collector Current (A) Operating Frequency vs Collector CurrentFmax, Operating Frequency (kHz) VCE = 600V D = 50% RG = 5Ω TJ = 125°C APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign pa tents pending. All Rights Reserved.