APTGF350DU60G MICROSEMI | Alldatasheet

Document overview

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Technical content

Features

  • Non Punch Through (NPT) Fast IGBT® - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated
  • Kelvin emitter for easy drive
  • Very low stray inductance - Symmetrical design - M5 power connectors
  • High level of integration Benefits
  • Outstandi ng performance at hi gh frequency operation
  • Stable temperature behavior
  • Very rugged
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • Easy paralleling due to positive TC of VCEsat
  • Low profile
  • RoHS compliant Dual common source NPT IGBT Power Module

APTGF350DU60G – Rev 2 July, 2006 www.microsemi.com 2 - 6 All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit Tj = 25°C 200 ICES Zero Gate Voltage Collector Current VGE = 0V VCE = 600V Tj = 125°C 1750 µA Tj = 25°C 2.0 2.5 VCE(sat) Collector Emitter saturation Voltage VGE =15V IC = 360A Tj = 125°C 2.2 V VGE(th) Gate Threshold Voltage V GE = VCE, IC = 4mA 3 5 V IGES Gate – Emitter Leakage Current V GE = ±20V, VCE = 0V ±300 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 17.2 Coes Output Capacitance 1.88 Cres Reverse Transfer Capacitance VGE = 0V VCE = 25V f = 1MHz 1.6 nF Qg Total gate Charge 1320 Qge Gate – Emitter Charge 1160 Qgc Gate – Collector Charge VGE = 15V VBus = 300V IC = 360A 800 nC Td(on) Turn-on Delay Ti me 26 Tr Rise Time 25 Td(off) Turn-off Delay Time 150 Tf Fall Time Inductive Switching (25°C) VGE = 15V VBus = 400V IC = 360A RG = 1.25Ω 30 ns Td(on) Turn-on Delay Ti me 26 Tr Rise Time 25 Td(off) Turn-off Delay Time 170 Tf Fall Time Inductive Switching (125°C) VGE = 15V VBus = 400V IC = 360A RG = 1.25Ω 40 ns Eon Turn-on Switchi ng Energy T j = 125°C 17.2 Eoff Turn-off Switching Energy VGE = 15V VBus = 400V IC = 360A RG = 1.25Ω Tj = 125°C 14 mJ Diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 600 V Tj = 25°C 750 IRM Maximum Reverse Leakage Current V R=600V Tj = 125°C 1500 µA IF DC Forward Current Tc = 80°C 400 A IF = 400A 1.6 1.8 IF = 800A 1.9 VF Diode Forward Voltage IF = 400A T j = 125°C 1.4 V Tj = 25°C 180 trr Reverse Recovery Time Tj = 125°C 220 ns Tj = 25°C 1560 Qrr Reverse Recovery Charge IF = 400A VR = 400V di/dt =800A/µs Tj = 125°C 5800 nC

APTGF350DU60G – Rev 2 July, 2006 www.microsemi.com 3 - 6 Thermal and package characteristics Symbol Characteristic Min Typ Max Unit IGBT 0.08 RthJC Junction to Case Thermal Resistance Diode 0.16 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ Operating junction temperature range -40 150 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 100 To heatsink M6 3 5 Torque Mounting torque For terminals M5 2 3.5 N.m Wt Package Weight 280 g See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com

APTGF350DU60G – Rev 2 July, 2006 www.microsemi.com 4 - 6 Typical Performance Curve Output characteristics (VGE=15V) TJ=-55°C TJ=25°C TJ=125°C 200 400 600 800 1000 1200 01234 Ic, Collector Current (A) VCE, Collector to Emitter Voltage (V) 250µs Pulse Test < 0.5% Duty cycle Transfer Characteristics TJ=-55°CTJ=25°C TJ=125°C 200 400 600 800 1000 1200 0123456789 1 0 V GE, Gate to Emitter Voltage (V) Ic, Collector Current (A) 250µs Pulse Test < 0.5% Duty cycle Ic=720A Ic=360A Ic=180A 6 8 10 12 14 16 V GE, Gate to Emitter Voltage (V) VCE, Collector to Emitter Voltage (V) On state Voltage vs Gate to Emitter Volt. TJ = 25°C 250µs Pulse Test < 0.5% Duty cycle Ic=720A Ic=360A Ic=180A 0.5 1.5 2.5 3.5 - 5 0 - 2 5 0 2 55 07 5 1 0 0 1 2 5 TJ, Junction Temperature (°C) VCE, Collector to Emitter Voltage (V) On state Voltage vs Junction Temperature 250µs Pulse Test < 0.5% Duty cycle V GE = 15V 0.70 0.80 0.90 1.00 1.10 1.20 -50 -25 0 25 50 75 100 125 T J, Junction Temperature (°C) Collector to Emitter Breakdown Voltage (Normalized) Breakdown Voltage vs Junction Temp. 100 200 300 400 500 0 25 50 75 100 125 150 TC, Case Temperature (°C) Ic, DC Collector Current (A) DC Collector Current vs Case Temperature Gate Charge VCE=120V VCE=300V VCE=480V 0 200 400 600 800 1000 1200 1400 Gate Charge (nC) VGE, Gate to Emitter Voltage (V) IC = 360A TJ = 25°C Output Characteristics (VGE=10V) TJ=-55°C TJ=25°C TJ=125°C 200 400 600 800 1000 1200 01234 Ic, Collector Current (A) VCE, Collector to Emitter Voltage (V) 250µs Pulse Test < 0.5% Duty cycle

APTGF350DU60G – Rev 2 July, 2006 www.microsemi.com 5 - 6 VGE = 15V 100 200 300 400 500 600 I CE, Collector to Emitter Current (A) td(on), Turn-On Delay Time (ns) Turn-On Delay Time vs Collector Current Tj = 25°C VCE = 400V RG = 1.25Ω VGE=15V, TJ=25°C VGE=15V, TJ=125°C 100 150 200 250 100 200 300 400 500 600 ICE, Collector to Emitter Current (A) td(off), Turn-Off Delay Time (ns) Turn-Off Delay Time vs Collector Current VCE = 400V RG = 1.25Ω VGE=15V, TJ=125°C 100 200 300 400 500 600 I CE, Collector to Emitter Current (A) tr, Rise Time (ns) Current Rise Time vs Collector Current VCE = 400V RG = 1.25Ω TJ = 25°C TJ = 125°C 100 200 300 400 500 600 ICE, Collector to Emitter Current (A) tf, Fall Time (ns) Current Fall Time vs Collector Current VCE = 400V, VGE = 15V, RG = 1.25Ω TJ=25°C, VGE=15V TJ=125°C, VGE=15V 100 200 300 400 500 600 ICE, Collector to Emitter Current (A) Eon, Turn-On Energy Loss (mJ) Turn-On Energy Loss vs Collector Current VCE = 400V RG = 1.25Ω TJ = 25°C TJ = 125°C 100 200 300 400 500 600 ICE, Collector to Emitter Current (A) Eoff, Turn-off Energy Loss (mJ) Turn-Off Energy Loss vs Collector Current VCE = 400V VGE = 15V RG = 1.25Ω Eon, 720A Eoff, 720A Eon, 360A Eoff, 360A Eon, 180A Eoff, 180A 02468 1 0 1 2 Gate Resistance (Ohms) Switching Energy Losses vs Gate ResistanceSwitching Energy Losses (mJ) VCE = 400V VGE = 15V TJ= 125°C Eon, 720A Eoff, 720A Eon, 360A Eoff, 360A Eon, 180A Eoff, 180A 0 2 55 07 5 1 0 0 1 2 5 TJ, Junction Temperature (°C) Switching Energy Losses (mJ) Switching Energy Losses vs Junction Temp. VCE = 400V VGE = 15V RG = 1.25Ω

APTGF350DU60G – Rev 2 July, 2006 www.microsemi.com 6 - 6 Cies Cres Coes 100 1000 10000 100000 0 1 02 03 04 05 0 C, Capacitance (pF) Capacitance vs Collector to Emitter Voltage VCE, Collector to Emitter Voltage (V) 100 200 300 400 500 600 700 800 900 0 200 400 600 800 IC, Collector Current (A) Reverse Bias Safe Operating Area VCE, Collector to Emitter Voltage (V) 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 Rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Operating Frequency vs Collector Current Hard switching ZCS ZVS 100 120 140 160 180 50 100 150 200 250 300 350 400 450 I C, Collector Current (A) Fmax, Operating Frequency (kHz) VCE = 400V D = 50% RG = 1.25Ω TJ = 125°C TC=75°C Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.