APTGF350A60 ADPOW | Alldatasheet

Document overview

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Technical content

Features

/g183/g32Non Punch Through (NPT) THUNDERBOLT IGBT® - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated /g183/g32Kelvin emitter for easy drive /g183/g32Very low stray inductance - Symmetrical design - M5 power connectors /g183/g32High level of integration Benefits /g183/g32Outstanding performance at high frequency operation /g183/g32Stable temperature behavior /g183/g32Very rugged /g183/g32Direct mounting to heatsink (isolated package) /g183/g32Low junction to case thermal resistance /g183Eas y paralleling due to positive TC of VCEsat Phase leg NPT IGBT Power Module

APTGF350A60 – Rev 1 March, 2004 APT website – http://www.advancedpower.com 2-6 All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit BVCES Collector - Emitter Breakdown Voltage V GE = 0V, IC = 200µA 600 V Tj = 25°C 200 ICES Zero Gate Voltage Collector Current VGE = 0V VCE = 600V Tj = 125°C 4000 µA Tj = 25°C 2.0 2.5 VCE(on) Collector Emitter on Voltage VGE =15V IC = 360A Tj = 125°C 2.2 V VGE(th) Gate Threshold Voltage V GE = VCE, IC = 4mA 3 5 V IGES Gate – Emitter Leakage Current V GE = ±20V, VCE = 0V ±300 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 17.2 Coes Output Capacitance 1.88 Cres Reverse Transfer Capacitance VGE = 0V VCE = 25V f = 1MHz 1.6 nF Qg Total gate Charge 1320 Qge Gate – Emitter Charge 1160 Qgc Gate – Collector Charge VGS = 15V VBus = 300V IC = 360A 800 nC Td(on) Turn-on Delay Time 26 Tr Rise Time 25 Td(off) Turn-off Delay Time 150 Tf Fall Time 30 ns Eon Turn-on Switching Energy /g117 13.5 Eoff Turn-off Switching Energy /g118 Inductive Switching (25°C) VGE = 15V VBus = 400V IC = 360A RG = 1.25/g87 11.5 mJ Td(on) Turn-on Delay Time 26 Tr Rise Time 25 Td(off) Turn-off Delay Time 170 Tf Fall Time 40 ns Eon Turn-on Switching Energy /g117 17.2 Eoff Turn-off Switching Energy /g118 Inductive Switching (125°C) VGE = 15V VBus = 400V IC = 360A RG = 1.25/g87 14 mJ Reverse diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit IF(AV) Maximum Average Forward Current 50% duty cycle Tc = 80°C 400 A IF = 400A 1.6 1.8 IF = 800A 1.9 VF Diode Forward Voltage IF = 400A T j = 125°C 1.4 V Tj = 25°C 180 trr Reverse Recovery Time IF = 400A VR = 400V di/dt =800A/µs Tj = 125°C 220 ns Tj = 25°C 1560 Qrr Reverse Recovery Charge IF = 400A VR = 400V di/dt =800A/µs Tj = 125°C 5800 nC /g117 Eon includes diode reverse recovery /g118 In accordance with JEDEC standard JESD24-1

APTGF350A60 – Rev 1 March, 2004 APT website – http://www.advancedpower.com 3-6 Thermal and package characteristics Symbol Characteristic Min Typ Max Unit IGBT 0.08 RthJC Junction to Case Diode 0.16 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ Operating junction temperature range -40 150 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 100 To heatsink M6 3 5 Torque Mounting torque For terminals M5 2 3.5 N.m Wt Package Weight 280 g Package outline

APTGF350A60 – Rev 1 March, 2004 APT website – http://www.advancedpower.com 4-6 Typical Performance Curve Output characteristics (VGE=15V) TJ=-55°C TJ=25°C TJ=125°C 200 400 600 800 1000 1200 01234 Ic, Collector Current (A) VCE, Collector to Emitter Voltage (V) 250µs Pulse Test < 0.5% Duty cycle Transfer Characteristics TJ=-55°CTJ=25°C TJ=125°C 200 400 600 800 1000 1200 0123456789 1 0 V GE, Gate to Emitter Voltage (V) Ic, Collector Current (A) 250µs Pulse Test < 0.5% Duty cycle Ic=720A Ic=360A Ic=180A 6 8 10 12 14 16 V GE, Gate to Emitter Voltage (V) VCE, Collector to Emitter Voltage (V) On state Voltage vs Gate to Emitter Volt. TJ = 25°C 250µs Pulse Test < 0.5% Duty cycle Ic=720A Ic=360A Ic=180A 0.5 1.5 2.5 3.5 -50 -25 0 25 50 75 100 125 TJ, Junction Temperature (°C) VCE, Collector to Emitter Voltage (V) On state Voltage vs Junction Temperature 250µs Pulse Test < 0.5% Duty cycle V GE = 15V 0.70 0.80 0.90 1.00 1.10 1.20 -50 -25 0 25 50 75 100 125 T J, Junction Temperature (°C) Collector to Emitter Breakdown Voltage (Normalized) Breakdown Voltage vs Junction Temp. 160 320 480 640 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Ic, DC Collector Current (A) DC Collector Current vs Case Temperature Gate Charge VCE=120V VCE=300V VCE=480V 0 200 400 600 800 1000 1200 1400 Gate Charge (nC) VGE, Gate to Emitter Voltage (V) IC = 360A TJ = 25°C Output Characteristics (VGE=10V) TJ=-55°C TJ=25°C TJ=125°C 200 400 600 800 1000 1200 01234 Ic, Collector Current (A) VCE, Collector to Emitter Voltage (V) 250µs Pulse Test < 0.5% Duty cycle

APTGF350A60 – Rev 1 March, 2004 APT website – http://www.advancedpower.com 5-6 VGE = 15V 100 200 300 400 500 600 I CE, Collector to Emitter Current (A) td(on), Turn-On Delay Time (ns) Turn-On Delay Time vs Collector Current Tj = 25°C VCE = 400V RG = 1.25Ω VGE=15V, TJ=25°C VGE=15V, TJ=125°C 100 150 200 250 100 200 300 400 500 600 ICE, Collector to Emitter Current (A) td(off), Turn-Off Delay Time (ns) Turn-Off Delay Time vs Collector Current VCE = 400V RG = 1.25Ω VGE=15V, TJ=125°C 100 200 300 400 500 600 ICE, Collector to Emitter Current (A) tr, Rise Time (ns) Current Rise Time vs Collector Current VCE = 400V RG = 1.25Ω TJ = 25°C TJ = 125°C 100 200 300 400 500 600 ICE, Collector to Emitter Current (A) tf, Fall Time (ns) Current Fall Time vs Collector Current VCE = 400V, VGE = 15V, RG = 1.25Ω TJ=25°C, VGE=15V TJ=125°C, VGE=15V 100 200 300 400 500 600 ICE, Collector to Emitter Current (A) Eon, Turn-On Energy Loss (mJ) Turn-On Energy Loss vs Collector Current VCE = 400V RG = 1.25Ω TJ = 25°C TJ = 125°C 100 200 300 400 500 600 I CE, Collector to Emitter Current (A) Eoff, Turn-off Energy Loss (mJ) Turn-Off Energy Loss vs Collector Current VCE = 400V VGE = 15V RG = 1.25Ω Eon, 720A Eoff, 720A Eon, 360A Eoff, 360A Eon, 180A Eoff, 180A 02468 1 0 1 2 Gate Resistance (Ohms) Switching Energy Losses vs Gate ResistanceSwitching Energy Losses (mJ) VCE = 400V VGE = 15V TJ= 125°C Eon, 720A Eoff, 720A Eon, 360A Eoff, 360A Eon, 180A Eoff, 180A 0 2 55 07 5 1 0 0 1 2 5 T J, Junction Temperature (°C) Switching Energy Losses (mJ) Switching Energy Losses vs Junction Temp. VCE = 400V VGE = 15V RG = 1.25Ω

APTGF350A60 – Rev 1 March, 2004 APT website – http://www.advancedpower.com 6-6 Cies Cres Coes 100 1000 10000 100000 0 1 02 03 04 05 0 C, Capacitance (pF) Capacitance vs Collector to Emitter Voltage VCE, Collector to Emitter Voltage (V) 200 400 600 800 1000 1200 1400 0 200 400 600 800 IC, Collector Current (A) Minimum Switching Safe Operating Area VCE, Collector to Emitter Voltage (V) 0.9 0.175 0.125 0.075 0.025

0.0125 Single Pulse

0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 Rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Operating Frequency vs Collector Current 100 120 140 160 180 50 100 150 200 250 300 350 400 450 IC, Collector Current (A) Fmax, Operating Frequency (kHz) VCE = 400V D = 50% RG = 1.25Ω TJ = 125°C APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign pa tents pending. All Rights Reserved.