APTGF30X60BTP2 ADPOW | Alldatasheet

Document overview

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  • PDF pages: 4

Technical content

Features

  • Non Punch Through (NPT) Fast IGBT® - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated
  • Very low stray inductance
  • High level of integration
  • Internal thermistor for temperature monitoring Benefits
  • Low conduction losses
  • Stable temperature behavior
  • Very rugged
  • Solderable terminals for easy PCB mounting
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • Easy paralleling due to positive TC of VCEsat
  • Low profile Input rectifier bridge + Brake + 3 Phase Bridge NPT IGBT Power Module

APTGF30X60BTP2 – Rev 0 July, 2003 APT website – http://www.advancedpower.com 2 - 4 IGBT & Diode Brake (only for APTGF30X60BTP2) Absolute maximum ratings Symbol Parameter Max ratings Unit VCES Collector - Emitter Breakdown Voltage 600 V TC = 25°C 25 IC Continuous Collector Current TC = 80°C 15 ICM Pulsed Collector Current TC = 25°C 37 A VGE Gate – Emitter Voltage ±20 V PD Maximum Power Dissipation TC = 25°C 100 W IF DC Forward Current TC = 80°C 10 A IGBT & Diode Inverter Absolute maximum ratings Symbol Parameter Max ratings Unit VCES Collector - Emitter Breakdown Voltage 600 V TC = 25°C 50 IC Continuous Collector Current TC = 80°C 30 ICM Pulsed Collector Current TC = 25°C 75 A VGE Gate – Emitter Voltage ±20 V PD Maximum Power Dissipation TC = 25°C 180 W SCSOA Short circuit Safe Operating Area Tj = 125°C 120A @ 360V IF DC Forward Current TC = 80°C 30 IFSM Surge Forward Current tp = 1ms TC = 80°C 60 A 2. Electrical Characteristics Diodes Rectifier Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit IR Reverse Current VR = 1600V Tj = 150°C 2 mA IF = 30A Tj = 25°C 1.3 1.5 VF Forward Voltage IF = 30A Tj = 150°C 1.1 1.15 V RthJC Junction to Case 1 °C/W IGBT Brake & Diode (only for APTGF30X60BTP2) Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Tj = 25°C 0.5 500 µA ICES Zero Gate Voltage Collector Current VGE = 0V VCE = 600V Tj = 125°C 0.8 mA Tj = 25°C 1.95 2.45 VCE(on) Collector Emitter on Voltage VGE = 15V IC = 15A Tj = 125°C 2.2 V VGE(th) Gate Threshold Voltage VGE = VCE , IC = 0.4mA 4.5 5.5 6.5 V IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 300 nA Cies Input Capacitance VGE = 0V, VCE = 25V f = 1MHz 800 pF Tj = 25°C 1.25 1.7 VF Forward Voltage VGE = 0V IF = 30A Tj = 125°C 1.2 V IGBT 1.3 RthJC Junction to Case Diode 1.2 °C/W

APTGF30X60BTP2 – Rev 0 July, 2003 APT website – http://www.advancedpower.com 3 - 4 IGBT & Diode Inverter Electrical Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit BVCES Collector - Emitter Breakdown Voltage VGE = 0V, IC = 500µA 600 V Tj = 25°C 1.0 500 µA ICES Zero Gate Voltage Collector Current VGE = 0V VCE = 600V Tj = 125°C 1.2 mA Tj = 25°C 1.95 2.45 VCE(on) Collector Emitter on Voltage VGE =15V IC = 30A Tj = 125°C 2.2 V VGE(th) Gate Threshold Voltage VGE = VCE , IC = 0.7 mA 4.5 5.5 6.5 V IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 300 nA Cies Input Capacitance VGE = 0V, VCE = 25V f = 1MHz 1600 pF Td(on) Turn-on Delay Time 50 Tr Rise Time 50 Td(off) Turn-off Delay Time 250 Tf Fall Time Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 30A RG = 33W 30 ns Td(on) Turn-on Delay Time 50 Tr Rise Time 50 Td(off) Turn-off Delay Time 270 Tf Fall Time 40 ns Eoff Turn off Energy Inductive Switching (125°C) VGE = ±15V VBus = 300V IC = 30A RG = 33W 1 mJ Tj = 25°C 1.25 1.7 VF Forward Voltage VGE = 0V IF = 30A Tj = 125°C 1.2 V Tj = 25°C 2.5 Qrr Reverse Recovery Charge IF = 30A VR = 300V di/dt=900A/µs Tj = 125°C 4 µC IGBT 0.7 RthJC Junction to Case Diode 1.2 °C/W Temperature sensor NTC Symbol Characteristic Min Typ Max Unit R25 Resistance @ 25°C 5 kW B 25/50 T25 = 298.16 K 3375 K TTB RR T 11exp 3. Thermal and package characteristics Symbol Characteristic Min Typ Max Unit VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ Operating junction temperature range -40 150 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 125 Torque Mounting torque To Heatsink M5 3.3 N.m Wt Package Weight 185 g T: Thermistor temperature RT: Thermistor value at T

APTGF30X60BTP2 – Rev 0 July, 2003 APT website – http://www.advancedpower.com 4 - 4 4. Package outline PIN 1 PIN 24 ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS : APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.