APTGF300DU120G MICROSEMI | Alldatasheet

Document overview

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Technical content

Features

  • Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated
  • Kelvin emitter for easy drive
  • Very low stray inductance - Symmetrical design - M5 power connectors
  • High level of integration Benefits
  • Outstandi ng performance at hi gh frequency operation
  • Stable temperature behavior
  • Very rugged
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • Easy paralleling due to positive TC of VCEsat
  • Low profile
  • RoHS Compliant Dual Common Source NPT IGBT Power Module

APTGF300DU120G – Rev 2 June, 2006 www.microsemi.com 2 - 5 All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit Tj = 25°C 500 ICES Zero Gate Voltage Collector Current VGE = 0V VCE = 1200V Tj = 125°C 750 µA Tj = 25°C 3.3 3.9 VCE(sat) Collector Emitter saturation Voltage VGE =15V IC = 300A Tj = 125°C 4 V VGE(th) Gate Threshold Voltage V GE = VCE, IC = 12mA 4.5 6.5 V IGES Gate – Emitter Leakage Current V GE = ±20V, VCE = 0V ±1 µA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 21 Coes Output Capacitance 2.9 Cres Reverse Transfer Capacitance VGE = 0V VCE = 25V f = 1MHz 1.52 nF Td(on) Turn-on Delay Time 120 Tr Rise Time 50 Td(off) Turn-off Delay Time 310 Tf Fall Time Inductive Switching (25°C) VGE = 15V VBus = 600V IC = 300A RG = 3Ω 30 ns Td(on) Turn-on Delay Time 130 Tr Rise Time 60 Td(off) Turn-off Delay Time 360 Tf Fall Time Inductive Switching (125°C) VGE = 15V VBus = 600V IC = 300A RG = 3Ω 40 ns Eon Turn-on Switchi ng Energy T j = 125°C 25 Eoff Turn-off Switching Energy VGE = 15V VBus = 600V IC = 300A RG = 3Ω Tj = 125°C 15 mJ Diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 1200 V Tj = 25°C 250 IRM Maximum Reverse Leakage Current V R=1200V Tj = 125°C 500 µA IF DC Forward Current Tc = 80°C 300 A Tj = 25°C 2.1 VF Diode Forward Voltage I F = 300A Tj = 125°C 1.9 V Tj = 25°C 120 trr Reverse Recovery Time Tj = 125°C 210 ns Tj = 25°C 22 Qrr Reverse Recovery Charge Tj = 125°C 43 µC Tj = 25°C 7 Er Reverse Recovery Energy IF = 300A VR = 600V di/dt =4500A/µs Tj = 125°C 15 mJ

APTGF300DU120G – Rev 2 June, 2006 www.microsemi.com 3 - 5 Thermal and package characteristics Symbol Characteristic Min Typ Max Unit IGBT 0.07 RthJC Junction to Case Thermal Resistance Diode 0.12 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ Operating junction temperature range -40 150 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 100 To heatsink M6 3 5 Torque Mounting torque For terminals M5 2 3.5 N.m Wt Package Weight 280 g See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com

APTGF300DU120G – Rev 2 June, 2006 www.microsemi.com 4 - 5 Typical Performance Curve Output Characteristics (VGE=15V) TJ=25°C TJ=125°C 100 200 300 400 500 600 0123456 VCE (V) IC (A) Output Characteristics VGE=15V VGE=12V VGE=20V VGE=9 V 100 200 300 400 500 600 0123456 VCE (V) IC (A) TJ = 125°C Transfert Characteristics TJ=25°C TJ=125°C 100 200 300 400 500 600 56789 1 0 1 1 1 2 V GE (V) IC (A) Energy losses vs Collector Current Eon Eoff Eoff Er 0 100 200 300 400 500 600 I C (A) E (mJ) VCE = 600V VGE = 15V RG = 3 Ω TJ = 125°C Eon Eoff Er 100 0 2 4 6 8 1 01 21 41 61 82 0 Gate Resistance (ohms) E (mJ) VCE = 600V VGE =15V IC = 300A TJ = 125°C Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 100 200 300 400 500 600 700 0 300 600 900 1200 1500 V CE (V) IC (A) VGE=15V TJ=125°C RG=3 Ω maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3 0.1

0.05 Single Pulse

0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) IGBT

APTGF300DU120G – Rev 2 June, 2006 www.microsemi.com 5 - 5 Forward Characteristic of diode TJ=25°C TJ=125°C 100 200 300 400 500 600 00 . 511 . 522 . 53 VF (V) IF (A) hard switching ZCS ZVS 100 0 50 100 150 200 250 300 350 I C (A) Fmax, Operating Frequency (kHz) VCE=600V D=50% RG=3 Ω TJ=125°C TC=75°C Operating Frequency vs Collector Current maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0.02 0.04 0.06 0.08 0.1 0.12 0.14 rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) Diode Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.