APTGF300A120 ADPOW | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

Features

  • Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated
  • Kelvin emitter for easy drive
  • Very low stray inductance - Symmetrical design - M5 power connectors
  • High level of integration Benefits
  • Outstanding performance at high frequency operation
  • Stable temperature behavior
  • Very rugged
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • Easy paralleling due to positive TC of VCEsat
  • Low profile Phase leg NPT IGBT Power Module

APTGF300A120 – Rev 1 March, 2004 APT website – http://www.advancedpower.com 2 - 5 All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit BVCES Collector - Emitter Breakdown Voltage VGE = 0V, IC = 4mA 1200 V Tj = 25°C 0.4 6 ICES Zero Gate Voltage Collector Current VGE = 0V VCE = 1200V Tj = 125°C 25 mA Tj = 25°C 3.3 3.9 VCE(on) Collector Emitter on Voltage VGE =15V IC = 300A Tj = 125°C 4 V VGE(th) Gate Threshold Voltage VGE = VCE, IC = 12mA 4.5 6.5 V IGES Gate – Emitter Leakage Current VGE = ±20V, VCE = 0V ±1 µA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 21 Coes Output Capacitance 2.9 Cres Reverse Transfer Capacitance VGE = 0V VCE = 25V f = 1MHz 1.52 nF Td(on) Turn-on Delay Time 70 Tr Rise Time 50 Td(off) Turn-off Delay Time 500 Tf Fall Time 30 ns Eon Turn-on Switching Energy 17 Eoff Turn-off Switching Energy Inductive Switching (125°C) VGE = 15V VBus = 600V IC = 300A RG = 2W 18 mJ Reverse diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit IF(AV) Maximum Average Forward Current 50% duty cycle Tc = 85°C 250 A IF = 300A 2.2 2.5 IF = 400A 2.4 VF Diode Forward Voltage IF = 400A Tj = 150°C 2.2 V Tj = 25°C 13 Qrr Reverse Recovery Charge IF = 300A Tj = 125°C 40 µC

APTGF300A120 – Rev 1 March, 2004 APT website – http://www.advancedpower.com 3 - 5 Thermal and package characteristics Symbol Characteristic Min Typ Max Unit IGBT 0.06 RthJC Junction to Case Diode 0.13 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ Operating junction temperature range -40 150 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 100 To heatsink M6 3 5 Torque Mounting torque For terminals M5 2 3.5 N.m Wt Package Weight 280 g Package outline

APTGF300A120 – Rev 1 March, 2004 APT website – http://www.advancedpower.com 4 - 5 Typical Performance Curve Output characteristics (VGE=15V) TJ=25°C TJ=125°C 100 150 200 250 300 350 400 450 0 1 2 3 4 Ic, Collector current (A) VCE, Collector to Emitter Voltage (V) 250µs Pulse Test < 0.5% Duty cycle Output characteristics (VGE=10V) TJ=25°C TJ=125°C 100 150 200 250 300 350 0 1 2 3 4 Ic, Collector current (A) VCE, Collector to Emitter Voltage (V) 250µs Pulse Test < 0.5% Duty cycle Transfer Characteristics 100 200 300 400 500 600 4 6 8 10 12 VGE, Gate to Emitter Voltage (V) Ic, Collector Current (A) 250µs Pulse Test < 0.5% Duty cycle Gate Charge VCE=600V VCE=800V 0 500 1000 1500 2000 2500 Gate Charge (nC) VGE, Gate to Emitter Voltage (V) IC = 300A TJ = 25°C 100 150 200 250 300 350 400 0 25 50 75 100 125 150 TC, Case Temperature (°C) Ic, DC Collector Current (A) DC Collector Current vs Case Temperature tdoff tdon tr tf 100 1000 0 100 200 300 400 Ic, Collector current (A) time (ns) Switching times vs collector current VCE = 600V VGE=±15V RG=2 TJ = 125°C Cres Coes Cies 100 0 10 20 30 C, Capacitance (nF) VCE, Collector to Emitter Voltage (V) Capacitance vs Collector to Emitter Voltage Eon Eoff 100 120 0 2 4 6 8 10 12 14 16 Gate resistance (Ohms) Switching Energy losses (mJ) Switching energy losses vs Gate resistance VCE = 600V VGE=±15V IC=300A TJ = 125°C

APTGF300A120 – Rev 1 March, 2004 APT website – http://www.advancedpower.com 5 - 5 100 200 300 400 500 600 700 0 300 600 900 1200 1500 IC, Collector current (A) VCE, Collector to Emitter Voltage (V) Minimum Switching Safe Operating Area Switching times vs gate resistor tdon tdoff tr tf 100 1000 10000 0 5 10 15 20 Gate resistance (Ohms) time (ns) VCE = 600V, VGE=±15V IC=300A, TJ = 125°C Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0.01 0.02 0.03 0.04 0.05 0.06 0.07 Rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) 100 50 100 150 200 250 300 350 400 IC, Collector Current (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current VCE = 800V D = 50% RG = 2 TJ = 125°C APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.