APTGF25DSK120T3 ADPOW | Alldatasheet

Document overview

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Technical content

Features

  • Non Punch Through (NPT) Fast IGBT® - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated - Symmetrical design
  • Kelvin emitter for easy drive
  • Very low stray inductance
  • High level of integration
  • Internal thermistor for temperature monitoring Benefits
  • Outstandi ng performance at hi gh frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • Solderable terminals both for power and signal for easy PCB mounting
  • Low profile
  • Easy paralleling due to positive TC of VCEsat
  • Each leg can be easily paralleled to achieve a single buck of twice the current capability. Dual Buck chopper NPT IGBT Power Module

APTGF25DSK120T3 – Rev 0 January, 2005 APT website – http://www.advancedpower.com 2 - 6 All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit Tj = 25°C 1 500 µA ICES Zero Gate Voltage Collector Current VGE = 0V VCE = 1200V Tj = 125°C 1 mA Tj = 25°C 2.5 3.2 3.7 VCE(on) Collector Emitter on Voltage VGE =15V IC = 25A Tj = 125°C 4.0 V VGE(th) Gate Threshold Voltage V GE = VCE , IC = 1mA 4 6 V IGES Gate – Emitter Leakage Current V GE = 20V, VCE = 0V 400 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 1650 Coes Output Capacitance 250 Cres Reverse Transfer Capacitance VGE = 0V VCE = 25V f = 1MHz 110 pF Qg Total gate Charge 160 Qge Gate – Emitter Charge 10 Qgc Gate – Collector Charge VGE = 15V VBus = 300V IC =25A 70 nC Td(on) Turn-on Delay Ti me 60 Tr Rise Time 50 Td(off) Turn-off Delay Time 305 Tf Fall Time Inductive Switching (25°C) VGE = 15V VBus = 400V IC = 25A RG = 22Ω 30 ns Td(on) Turn-on Delay Ti me 60 Tr Rise Time 50 Td(off) Turn-off Delay Time 346 Tf Fall Time 40 ns Eon Turn-on Switchi ng Energy X 3.5 Eoff Turn-off Switching Energy Y Inductive Switching (125°C) VGE = 15V VBus = 400V IC = 25A RG = 22Ω 1.5 mJ X Eon includes diode reverse recovery Y In accordance with JEDEC standard JESD24-1 Reverse diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 1200 V Tj = 25°C 250 IRM Maximum Reverse Leakage Current V R=1200V Tj = 125°C 500 µA IF(A V) Maximum Average Forward Current 50% duty cycle Tc = 70°C 60 A IF = 60A 2 2.5 IF = 120A 2.3 VF Diode Forward Voltage IF = 60A Tj = 125°C 1.8 V Tj = 25°C 400 trr Reverse Recovery Time IF = 60A VR = 800V di/dt =200A/µs Tj = 125°C 470 ns Tj = 25°C 1.2 Qrr Reverse Recovery Charge IF = 60A VR = 800V di/dt =200A/µs Tj = 125°C 4 µC

APTGF25DSK120T3 – Rev 0 January, 2005 APT website – http://www.advancedpower.com 3 - 6 Temperature sensor NTC Symbol Characteristic Min Typ Max Unit R25 Resistance @ 25°C 68 kΩ B 25/85 T 25 = 298.16 K 4080 K  − TT B RRT 11exp Thermal and package characteristics Symbol Characteristic Min Typ Max Unit IGBT 0.6 RthJC Junction to Case Diode 0.9 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ Operating junction temperature range -40 150 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 100 Torque Mounting torque To heatsink M4 4.7 N.m Wt Package Weight 110 g Package outline T: Thermistor temperature RT: Thermistor value at T

APTGF25DSK120T3 – Rev 0 January, 2005 APT website – http://www.advancedpower.com 4 - 6 Typical Performance Curve Output characteristics (VGE=15V)TJ=25°C TJ=125°C 012345678 Ic, Collector Current (A) VCE, Collector to Emitter Voltage (V) 250µs Pulse Test < 0.5% Duty cycle Output Characteristics (VGE=10V) TJ=25°C TJ=125°C 00 . 511 . 522 . 533 . 5 Ic, Collector Current (A) VCE, Collector to Emitter Voltage (V) 250µs Pulse Test < 0.5% Duty cycle Transfer Characteristics TJ=25°C TJ=125°C 100 120 0 2.5 5 7.5 10 12.5 15 VGE, Gate to Emitter Voltage (V) Ic, Collector Current (A) 250µs Pulse Test < 0.5% Duty cycle Gate Charge VCE=240V VCE=600V VCE=960V 0 30 60 90 120 150 180 Gate Charge (nC) VGE, Gate to Emitter Voltage (V) IC = 25A TJ = 25°C Ic=50A Ic=25A Ic=12.5A 9 1 01 11 21 31 41 51 6 VGE, Gate to Emitter Voltage (V) On state Voltage vs Gate to Emitter Volt. VCE, Collector to Emitter Voltage (V) TJ = 125°C 250µs Pulse Test < 0.5% Duty cycle Ic=50A Ic=25A Ic=12.5A -50 -25 0 25 50 75 100 125 TJ, Junction Temperature (°C) VCE, Collector to Emitter Voltage (V) On state Voltage vs Junction Temperature 250µs Pulse Test < 0.5% Duty cycle VGE = 15V 0.80 0.85 0.90 0.95 1.00 1.05 1.10 -50 -25 0 25 50 75 100 125 TJ, Junction Temperature (°C) Collector to Emitter Breakdown Voltage (Normalized) Breakdown Voltage vs Junction Temp. -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Ic, DC Collector Current (A) DC Collector Current vs Case Temperature

APTGF25DSK120T3 – Rev 0 January, 2005 APT website – http://www.advancedpower.com 5 - 6 VGE = 15V 5 1 52 53 54 55 5 I CE, Collector to Emitter Current (A) td(on), Turn-On Delay Time (ns) Turn-On Delay Time vs Collector Current VCE = 600V RG = 22Ω VGE=15V, TJ=25°C VGE=15V, TJ=125°C 200 250 300 350 400 5 1 52 53 54 55 5 ICE, Collector to Emitter Current (A) Turn-Off Delay Time vs Collector Current td(off), Turn-Off Delay Time (ns) VCE = 600V RG = 22Ω VGE=15V 120 160 5 1 52 53 54 55 5 ICE, Collector to Emitter Current (A) tr, Rise Time (ns) Current Rise Time vs Collector Current VCE = 600V RG = 22Ω TJ = 25°C TJ = 125°C 5 1 52 53 54 55 5 ICE, Collector to Emitter Current (A) tf, Fall Time (ns) Current Fall Time vs Collector Current VCE = 600V, VGE = 15V, RG = 22Ω TJ=25°C, VGE=15V TJ=125°C, VGE=15V 5 1 52 53 54 55 5 ICE, Collector to Emitter Current (A) Turn-On Energy Loss vs Collector Current Eon, Turn-On Energy Loss (mJ) VCE = 600V RG = 22Ω TJ = 25°C TJ = 125°C 5 1 52 53 54 55 5 ICE, Collector to Emitter Current (A) Eoff, Turn-off Energy Loss (mJ) Turn-Off Energy Loss vs Collector Current VCE = 600V VGE = 15V RG = 22Ω Eon, 25A Eoff, 25A 0 1 02 03 04 05 06 0 Gate Resistance (Ohms) Switching Energy Losses (mJ) Switching Energy Losses vs Gate Resistance VCE = 600V VGE = 15V TJ= 125°C 0 400 800 1200 IC, Collector Current (A) Minimum Switching Safe Operating Area VCE, Collector to Emitter Voltage (V)

APTGF25DSK120T3 – Rev 0 January, 2005 APT website – http://www.advancedpower.com 6 - 6 Cies Cres Coes 100 1000 10000 0 1 02 03 04 05 0 C, Capacitance (pF) Capacitance vs Collector to Emitter Voltage VCE, Collector to Emitter Voltage (V) 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Hard swit ching ZCS ZVS 100 120 01 0 2 0 3 0 4 0 I C, Collector Current (A) Operating Frequency vs Collector CurrentFmax, Operating Frequency (kHz) VCE = 600V D = 5 0% RG = 22Ω TJ = 125°C TC= 75°C APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.