APTGF250A60D3G MICROSEMI | Alldatasheet

Document overview

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Technical content

Features

  • Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated
  • Kelvin emitter for easy drive
  • High level of integration
  • M6 power connectors Benefits
  • Stable temperature behavior
  • Very rugged
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • Easy paralleling due to positive TC of VCEsat
  • RoHS Compliant Phase leg NPT IGBT Power Module

APTGF250A60D3G – Rev 0 September, 2008 www.microsemi.com 2-5 All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit ICES Zero Gate Voltage Collector Current V GE = 0V, VCE = 600V 500 µA Tj = 25°C 1.95 2.45 VCE(sat) Collector Emitter saturation Voltage VGE = 15V IC = 300A Tj = 125°C 2.2 V VGE(th) Gate Threshold Voltage V GE = VCE , IC = 6 mA 5.0 5.8 6.5 V IGES Gate – Emitter Leakage Current V GE = 20V, VCE = 0V 400 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 13 Cres Reverse Transfer Capacitance VGE = 0V ; VCE = 25V f = 1MHz 1.2 nF QG Gate charge VGE=15V, IC=300A VCE=300V 720 nC Td(on) Turn-on Delay Time 150 Tr Rise Time 72 Td(off) Turn-off Delay Time 530 Tf Fall Time Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 300A RG = 6Ω 40 ns Td(on) Turn-on Delay Time 160 Tr Rise Time 75 Td(off) Turn-off Delay Time 550 Tf Fall Time Inductive Switching (125°C) VGE = ±15V VBus = 300V IC = 300A RG = 6Ω 50 ns Eon Turn on Energy T j = 125°C 14 Eoff Turn off Energy VGE = ±15V VBus = 300V IC = 300A RG = 6Ω Tj = 125°C 13 mJ Isc Short Circuit data VGE ≤15V ; VBus = 360V tp ≤ 10µs ; Tj = 125°C 1350 A Reverse diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 600 V Tj = 25°C 750 IRRM Maximum Reverse Leakage Current V R=600V Tj = 125°C 1000 µA IF DC Forward Current Tc = 80°C 300 A Tj = 25°C 1.25 1.6 VF Diode Forward Voltage IF = 300A VGE = 0V Tj = 125°C 1.2 V Tj = 25°C 150 trr Reverse Recovery Time Tj = 125°C 250 ns Tj = 25°C 20 Qrr Reverse Recovery Charge Tj = 125°C 32 µC Tj = 25°C 4 Err Reverse Recovery Energy IF = 300A VR = 300V di/dt =4800A/µs Tj = 125°C 7.6 mJ

APTGF250A60D3G – Rev 0 September, 2008 www.microsemi.com 3-5 Thermal and package characteristics Symbol Characteristic Min Typ Max Unit IGBT 0.1 RthJC Junction to Case Thermal Resistance Diode 0.21 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ Operating junction temperature range -40 150 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 125 For terminals M6 3 5 Torque Mounting torque To Heatsink M6 3 5 N.m Wt Package Weight 350 g A DÉTAIL A

APTGF250A60D3G – Rev 0 September, 2008 www.microsemi.com 4-5 Typical Performance Curve Output Characteristics (VGE=15V) TJ=25°C TJ=125°C 100 200 300 400 500 600 00 . 511 . 522 . 533 . 5 VCE (V) IC (A) Output Characteristics VGE=15V VGE=12VVGE=20V VGE=9V 100 200 300 400 500 600 012345 V CE (V) IC (A) TJ = 125°C Transfert Characteristics TJ=25°C TJ=125°C 100 200 300 400 500 600 56789 1 0 1 1 1 2 V GE (V) IC (A) Energy losses vs Collector Current Eon Eoff Err 0 150 300 450 600 I C (A) E (mJ) VCE = 300V VGE = 15V RG = 6 Ω TJ = 125°C Eon Eoff Err 0 5 10 15 20 25 30 Gate Resistance (ohms) E (mJ) VCE = 300V VGE =15V IC = 300A TJ = 125°C Switching Energy Losses vs Gate Resistance Reverse Safe Operating Area 100 200 300 400 500 600 700 0 100 200 300 400 500 600 V CE (V) IC (A) VGE=15V TJ=125°C RG=6 Ω maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.9 0.7 0.5 0.3 0.1

0.05 Single Pulse

0.02 0.04 0.06 0.08 0.1 0.12 rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) IGBT

APTGF250A60D3G – Rev 0 September, 2008 www.microsemi.com 5-5 hard switching ZCS ZVS 0 100 200 300 400 I C (A) Fmax, Operating Frequency (kHz) VCE=300V D=50% RG=6Ω TJ=125°C TC=75°C Operating Frequency vs Collector Current Forward Characteristic of diode TJ=25°C TJ=125°C 100 200 300 400 500 600 VF (V) IF (A) maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse -0.02 0.02 0.06 0.1 0.14 0.18 0.22 rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) Diode Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.