APTGF200U60D4 ADPOW | Alldatasheet

Document overview

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  • PDF pages: 5

Technical content

Features

  • Non Punch Through (NPT) fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated
  • Kelvin emitter for easy drive
  • Low stray inductance - M6 connectors for power - M4 connectors for signal
  • High level of integration Benefits
  • Outstandi ng performance at hi gh frequency operation
  • Stable temperature behavior
  • Very rugged
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • Easy paralleling due to positive TC of VCEsat Single switch NPT IGBT Power Module

APTGF200U60D4 – Rev 1 June, 2005 APT website – http://www.advancedpower.com 2 - 5 All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit Tj = 25°C 1 500 µA ICES Zero Gate Voltage Collector Current VGE = 0V VCE = 600V Tj = 125°C 1 mA Tj = 25°C 1.95 2.45 VCE(on) Collector Emitter on Voltage VGE = 15V IC = 200A Tj = 125°C 2.2 V VGE(th) Gate Threshold Voltage V GE = VCE , IC = 4mA 4.5 5.5 6.5 V IGES Gate – Emitter Leakage Current V GE = 20V, VCE = 0V 400 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 9 Cres Reverse Transfer Capacitance VGE = 0V, VCE = 25V f = 1MHz 0.8 nF Td(on) Turn-on Delay Ti me 163 Tr Rise Time 43 Td(off) Turn-off Delay Time 253 Tf Fall Time Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 200A RG = 1.5Ω 33 ns Td(on) Turn-on Delay Ti me 183 Tr Rise Time 49 Td(off) Turn-off Delay Time 285 Tf Fall Time 41 ns Eon Turn on Energy 4.6 Eoff Turn off Energy Inductive Switching (125°C) VGE = ±15V VBus = 300V IC = 200A RG = 1.5Ω 6.3 mJ Reverse diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 600 V Tj = 25°C 250 IRM Maximum Reverse Leakage Current V R=600V Tj = 125°C 500 µA Tj = 25°C 1.25 1.6 VF Diode Forward Voltage IF = 200A VGE = 0V Tj = 125°C 1.2 V ER Reverse Recovery Energy T j = 125°C 4.1 mJ Tj = 25°C 12 Qrr Reverse Recovery Charge IF = 200A VR = 300V di/dt =4000A/µs T j = 125°C 19 µC

APTGF200U60D4 – Rev 1 June, 2005 APT website – http://www.advancedpower.com 3 - 5 Thermal and package characteristics Symbol Characteristic Min Typ Max Unit IGBT 0.17 RthJC Junction to Case Diode 0.29 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ Operating junction temperature range -40 150 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 125 M6 3 5 Torque Mounting torque M4 1 2 N.m Wt Package Weight 420 g Package outline (dimensions in mm)

APTGF200U60D4 – Rev 1 June, 2005 APT website – http://www.advancedpower.com 4 - 5 Typical Performance Curve Output Characteristics (VGE=15V) TJ=25°C TJ=125°C 100 150 200 250 300 350 400 00 . 511 . 522 . 533 . 5 VCE (V) IC (A) Output Characteristics VGE=15V VGE=12VVGE=20V VGE=9V 100 150 200 250 300 350 400 012345 V CE (V) IC (A) TJ = 125°C Transfert Characteristics TJ=25°C TJ=25°C TJ=125°C 100 150 200 250 300 350 400 56789 1 0 1 1 1 2 V GE (V) IC (A) Energy losses vs Collector Current EonEo ff Er 2.5 7.5 12.5 0 50 100 150 200 250 300 350 400 IC (A) E (mJ) VCE = 300V VGE = 15V RG = 1.5Ω TJ = 125°C Eon Eoff Er 02468 1 0 1 2 Gate Resistance (ohms) E (mJ) VCE = 300V VGE =15V IC = 200A TJ = 125°C Switching Energy Losses vs Gate Resistance Reverse Safe Operating Area 100 200 300 400 500 0 100 200 300 400 500 600 V CE (V) IC (A) VGE=15V TJ=125°C RG=1.5Ω maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.9 0.7 0.5 0.3 0.1

0.05 Single Pulse

0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) IGBT

APTGF200U60D4 – Rev 1 June, 2005 APT website – http://www.advancedpower.com 5 - 5 hard switching ZCS ZVS 100 0 50 100 150 200 250 300 I C (A) Fmax, Operating Frequency (kHz) VCE=300V D=50% RG=1.5Ω TJ=125°C TC=75°C Operating Frequency vs Collector Current Forward Characteristic of diode TJ=25°C TJ=125°C 100 150 200 250 300 350 400 V F (V) IC (A) maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.9 0.7 0.5 0.3 0.1 0.05 0.1 0.15 0.2 0.25 0.3 rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) Diode APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.