APTGF200U120D ADPOW | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 6

Technical content

Features

  • Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated
  • Kelvin emitter for easy drive
  • Very low stray inductance - Symmetrical design - M5 power connectors
  • High level of integration Benefits
  • Outstandi ng performance at hi gh frequency operation
  • Stable temperature behavior
  • Very rugged
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • Easy paralleling due to positive TC of VCEsat
  • Low profile Single Switch with Series diodes NPT IGBT Power Module

APTGF200U120D – Rev 0 July, 2004 APT website – http://www.advancedpower.com 2 – 6 All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit BVCES Collector - Emitter Breakdown Voltage V GE = 0V, IC = 1.5mA 1200 V Tj = 25°C 1.5 ICES Zero Gate Voltage Collector Current VGE = 0V VCE = 1200V Tj = 125°C 7.0 mA Tj = 25°C 3.2 3.7 VCE(on) Collector Emitter on Voltage VGE =15V IC = 200A Tj = 125°C 4.0 V VGE(th) Gate Threshold Voltage V GE = VCE, IC = 4mA 4.5 6.5 V IGES Gate – Emitter Leakage Current V GE = ±20V, VCE = 0V ±300 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 13.8 Coes Output Capacitance 1.32 Cres Reverse Transfer Capacitance VGE = 0V VCE = 25V f = 1MHz 880 nF Qg Total gate Charge 1320 Qge Gate – Emitter Charge 140 Qgc Gate – Collector Charge VGS = 15V VBus = 600V IC = 200A 800 nC Td(on) Turn-on Delay Ti me 35 Tr Rise Time 65 Td(off) Turn-off Delay Time 320 Tf Fall Time 30 Eon Turn-on Switching Energy 21.6 Eoff Turn-off Switching Energy Inductive Switching (125°C) VGE = 15V VBus = 600V IC = 200A RG = 1.2Ω 9.2 Td(on) Turn-on Delay Ti me 35 Tr Rise Time 65 Td(off) Turn-off Delay Time 360 Tf Fall Time 40 ns Eon Turn-on Switching Energy 27.9 Eoff Turn-off Switching Energy Inductive Switching (125°C) VGE = 15V VBus = 600V IC = 200A RG = 1.2Ω 12.2 mJ Series diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Repetitive Reverse Voltage 1200 IF(A V) Maximum Average Forward Current 50% duty cycle Tc = 70°C 240 A IF = 240A 2 2.5 IF = 480A 2.3 VF Diode Forward Voltage IF = 240A T j = 125°C 1.8 V Tj = 25°C 400 trr Reverse Recovery Time IF = 240A VR = 800V di/dt =800A/µs Tj = 125°C 470 ns Tj = 25°C 4.8 Qrr Reverse Recovery Charge IF = 240A VR = 800V di/dt =800A/µs Tj = 125°C 16 µC

APTGF200U120D – Rev 0 July, 2004 APT website – http://www.advancedpower.com 3 – 6 Thermal and package characteristics Symbol Characteristic Min Typ Max Unit IGBT 0.11 RthJC Junction to Case Diode 0.23 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ Operating junction temperature range -40 150 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 100 To heatsink M6 3 5 Torque Mounting torque For terminals M5 2 3.5 N.m Wt Package Weight 280 g Package outline

APTGF200U120D – Rev 0 July, 2004 APT website – http://www.advancedpower.com 4 – 6 Typical Performance Curve Output characteristics (VGE=15V) TJ=25°C TJ=125°C 200 400 600 800 02468 Ic, Collector Current (A) VCE, Collector to Emitter Voltage (V) 250µs Pulse Test < 0.5% Duty cycle Output Characteristics (VGE=10V) TJ=25°C TJ=125°C 100 150 200 01234 Ic, Collector Current (A) VCE, Collector to Emitter Voltage (V) 250µs Pulse Test < 0.5% Duty cycle Transfer Characteristics TJ=25°C TJ=125°C 200 400 600 800 1000 1200 0 4 8 12 16 VGE, Gate to Emitter Voltage (V) Ic, Collector Current (A) 250µs Pulse Test < 0.5% Duty cycle Gate Charge VCE=240V VCE=600V VCE=960V 0 200 400 600 800 1000 1200 1400 Gate Charge (nC) VGE, Gate to Emitter Voltage (V) IC = 200A TJ = 25°C Ic=400A Ic=200A Ic=100A 9 1 01 11 21 31 41 51 6 VGE, Gate to Emitter Voltage (V) On state Voltage vs Gate to Emitter Volt. VCE, Collector to Emitter Voltage (V) TJ = 25°C 250µs Pulse Test < 0.5% Duty cycle Ic=400A Ic=200A Ic=100A -50 -25 0 25 50 75 100 125 TJ, Junction Temperature (°C) VCE, Collector to Emitter Voltage (V) On state Voltage vs Junction Temperature 250µs Pulse Test < 0.5% Duty cycle V GE = 15V 0.70 0.75 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 -50 -25 0 25 50 75 100 125 TJ, Junction Temperature (°C) Collector to Emitter Breakdown Voltage (Normalized) Breakdown Voltage vs Junction Temp. 100 150 200 250 300 350 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Ic, DC Collector Current (A) DC Collector Current vs Case Temperature

APTGF200U120D – Rev 0 July, 2004 APT website – http://www.advancedpower.com 5 – 6 VGE = 15V 0 100 200 300 400 500 I CE, Collector to Emitter Current (A) td(on), Turn-On Delay Time (ns) Turn-On Delay Time vs Collector Current VCE = 600V RG = 1.2Ω VGE=15V, TJ=25°C VGE=15V, TJ=125°C 200 250 300 350 400 0 100 200 300 400 500 ICE, Collector to Emitter Current (A) Turn-Off Delay Time vs Collector Current td(off), Turn-Off Delay Time (ns) VCE = 600V RG = 1.2Ω VGE=15V 100 140 180 0 100 200 300 400 500 ICE, Collector to Emitter Current (A) tr, Rise Time (ns) Current Rise Time vs Collector Current VCE = 600V RG = 1.2Ω TJ = 25°C TJ = 125°C 0 100 200 300 400 500 ICE, Collector to Emitter Current (A) tf, Fall Time (ns) Current Fall Time vs Collector Current VCE = 600V, VGE = 15V, RG = 1.2Ω TJ=25°C, VGE=15V TJ=125°C, VGE=15V 100 120 0 100 200 300 400 500 ICE, Collector to Emitter Current (A) Turn-On Energy Loss vs Collector Current Eon, Turn-On Energy Loss (mJ) VCE = 600V RG = 1.2Ω TJ = 25°C TJ = 125°C 0 100 200 300 400 500 ICE, Collector to Emitter Current (A) Eoff, Turn-off Energy Loss (mJ) Turn-Off Energy Loss vs Collector Current VCE = 600V VGE = 15V RG = 1.2Ω Eon, 200A Eoff, 200A Eon, 100A Eoff, 100A 02 . 557 . 5 1 0 1 2 . 5 Gate Resistance (Ohms) Switching Energy Losses (mJ) Switching Energy Losses vs Gate Resistance VCE = 600V VGE = 15V TJ= 125°C Eon, 200A Eoff, 200A Eon, 100A Eoff, 100A 0 25 50 75 100 125 TJ, Junction Temperature (°C) Switching Energy Losses (mJ) Switching Energy Losses vs Junction Temp. VCE = 600V VGE = 15V RG = 1.2Ω

APTGF200U120D – Rev 0 July, 2004 APT website – http://www.advancedpower.com 6 – 6 Cies Cres Coes 100 1000 10000 100000 0 1 02 03 04 05 0 C, Capacitance (pF) Capacitance vs Collector to Emitter Voltage VCE, Collector to Emitter Voltage (V) 100 200 300 400 500 600 700 0 400 800 1200 IC, Collector Current (A) Minimum Switching Safe Operating Area VCE, Collector to Emitter Voltage (V) 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0.02 0.04 0.06 0.08 0.1 0.12 Rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Hard switching ZCS 100 120 20 60 100 140 180 220 I C, Collector Current (A) Operating Frequency vs Collector CurrentFmax, Operating Frequency (kHz) VCE = 600V D = 5 0% R G = 1.2Ω TJ = 125°C TC = 75°C APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.