APTGF180DU60T ADPOW | Alldatasheet

Document overview

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Technical content

Features

/g183/g32Non Punch Through (NPT) THUNDERBOLT IGBT® - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated /g183/g32Kelvin emitter for easy drive /g183/g32Very low stray inductance - Symmetrical design - Lead frames for power connections /g183/g32Internal thermistor for temperature monitoring /g183/g32High level of integration Benefits /g183/g32Outstanding performance at high frequency operation /g183/g32Stable temperature behavior /g183/g32Very rugged /g183/g32Direct mounting to heatsink (isolated package) /g183/g32Low junction to case thermal resistance /g183/g32Solderable terminals both for power and signal for easy PCB mounting /g183/g32Easy paralleling due to positive TC of VCEsat /g183/g32Low profile Absolute maximum ratings These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. NTC1 E NTC2 C1 C2 NTC2 NTC1 E Symbol Parameter Max ratings Unit VCES Collector - Emitter Breakdown Voltage 600 V Tc = 25°C 220 IC Continuous Collector Current Tc = 80°C 180 ICM Pulsed Collector Current T c = 25°C 630 A VGE Gate – Emitter Voltage ±20 V PD Maximum Power Dissipation Tc = 25°C 833 W RBSOA Reverse Bias Safe Operating Area T j = 150°C 630A @ 600V VCES = 600V IC = 180A @ Tc = 80°C Dual common source NPT IGBT Power Module

APTGF180DU60T – Rev 1 March, 2004 APT website – http://www.advancedpower.com 2-6 All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit BVCES Collector - Emitter Breakdown Voltage V GE = 0V, IC = 150µA 600 V Tj = 25°C 150 ICES Zero Gate Voltage Collector Current VGE = 0V VCE = 600V Tj = 125°C 3000 µA Tj = 25°C 2.0 2.5 VCE(on) Collector Emitter on Voltage VGE =15V IC = 180A Tj = 125°C 2.2 V VGE(th) Gate Threshold Voltage V GE = VCE, IC = 2mA 3 5 V IGES Gate – Emitter Leakage Current V GE = 20 V, VCE = 0V ±200 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 8.6 Coes Output Capacitance 0.94 Cres Reverse Transfer Capacitance VGE = 0V VCE = 25V f = 1MHz 0.8 nF Qg Total gate Charge 660 Qge Gate – Emitter Charge 580 Qgc Gate – Collector Charge VGS = 15V VBus = 300V IC = 180A 400 nC Td(on) Turn-on Delay Time 26 Tr Rise Time 25 Td(off) Turn-off Delay Time 150 Tf Fall Time 30 ns Eon Turn-on Switching Energy /g117 6.74 Eoff Turn-off Switching Energy /g118 Inductive Switching (25°C) VGE = 15V VBus = 400V IC = 180A RG = 2.5 /g87 5.74 mJ Td(on) Turn-on Delay Time 26 Tr Rise Time 25 Td(off) Turn-off Delay Time 170 Tf Fall Time 40 ns Eon Turn-on Switching Energy /g117 8.6 Eoff Turn-off Switching Energy /g118 Inductive Switching (125°C) VGE = 15V VBus = 400V IC = 180A RG = 2.5 /g87 7 mJ Reverse diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit IF(AV) Maximum Average Forward Current 50% duty cycle Tc = 70°C 120 A IF = 120A 1.6 1.8 IF = 240A 1.9 VF Diode Forward Voltage IF = 120A T j = 125°C 1.4 V Tj = 25°C 85 trr Reverse Recovery Time IF = 120A VR = 400V di/dt =800A/µs Tj = 125°C 160 ns Tj = 25°C 520 Qrr Reverse Recovery Charge IF = 120A VR = 400V di/dt =800A/µs Tj = 125°C 2800 nC /g117 Eon includes diode reverse recovery /g118 In accordance with JEDEC standard JESD24-1

APTGF180DU60T – Rev 1 March, 2004 APT website – http://www.advancedpower.com 3-6 Thermal and package characteristics Symbol Characteristic Min Typ Max Unit IGBT 0.15 RthJC Junction to Case Diode 0.32 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ Operating junction temperature range -40 150 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 100 Torque Mounting torque To Heatsink M5 4.7 N.m Wt Package Weight 160 g Temperature sensor NTC Symbol Characteristic Min Typ Max Unit R25 Resistance @ 25°C 68 k/g87 B 25/85 T 25 = 298.16 K 4080 K /g250 /g251 /g249 /g234 /g235 /g233 /g247/g247 /g248 /g246 /g231/g231 /g232 /g230/g45 /g61 TTB RR T 11exp Package outline T: Thermistor temperature RT: Thermistor value at T

APTGF180DU60T – Rev 1 March, 2004 APT website – http://www.advancedpower.com 4-6 Typical Performance Curve Output characteristics (VGE=15V) TJ=-55°C TJ=25°C TJ=125°C 100 200 300 400 500 600 01234 Ic, Collector Current (A) VCE, Collector to Emitter Voltage (V) 250µs Pulse Test < 0.5% Duty cycle Transfer Characteristics TJ=-55°CTJ=25°C TJ=125°C 100 200 300 400 500 600 0123456789 1 0 V GE, Gate to Emitter Voltage (V) Ic, Collector Current (A) 250µs Pulse Test < 0.5% Duty cycle Ic=360A Ic=180A Ic=90A 6 8 10 12 14 16 VGE, Gate to Emitter Voltage (V) VCE, Collector to Emitter Voltage (V) On state Voltage vs Gate to Emitter Volt. TJ = 25°C 250µs Pulse Test < 0.5% Duty cycle Ic=360A Ic=180A Ic=90A 0.5 1.5 2.5 3.5 -50 -25 0 25 50 75 100 125 TJ, Junction Temperature (°C) VCE, Collector to Emitter Voltage (V) On state Voltage vs Junction Temperature 250µs Pulse Test < 0.5% Duty cycle V GE = 15V 0.70 0.80 0.90 1.00 1.10 1.20 -50 -25 0 25 50 75 100 125 T J, Junction Temperature (°C) Collector to Emitter Breakdown Voltage (Normalized) Breakdown Voltage vs Junction Temp. 160 240 320 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Ic, DC Collector Current (A) DC Collector Current vs Case Temperature Gate Charge VCE=120V VCE=300V VCE=480V 0 100 200 300 400 500 600 700 Gate Charge (nC) VGE, Gate to Emitter Voltage (V) IC = 180A TJ = 25°C Output Characteristics (VGE=10V) TJ=-55°C TJ=25°C TJ=125°C 100 200 300 400 500 600 01234 Ic, Collector Current (A) VCE, Collector to Emitter Voltage (V) 250µs Pulse Test < 0.5% Duty cycle

APTGF180DU60T – Rev 1 March, 2004 APT website – http://www.advancedpower.com 5-6 VGE = 15V 50 100 150 200 250 300 I CE, Collector to Emitter Current (A) td(on), Turn-On Delay Time (ns) Turn-On Delay Time vs Collector Current Tj = 25°C VCE = 400V RG = 2.5Ω VGE=15V, TJ=25°C VGE=15V, TJ=125°C 100 150 200 250 50 100 150 200 250 300 ICE, Collector to Emitter Current (A) td(off), Turn-Off Delay Time (ns) Turn-Off Delay Time vs Collector Current VCE = 400V RG = 2.5Ω VGE=15V, TJ=125°C 50 100 150 200 250 300 ICE, Collector to Emitter Current (A) tr, Rise Time (ns) Current Rise Time vs Collector Current VCE = 400V RG = 2.5Ω TJ = 25°C TJ = 125°C 50 100 150 200 250 300 ICE, Collector to Emitter Current (A) tf, Fall Time (ns) Current Fall Time vs Collector Current VCE = 400V, VGE = 15V, RG = 2.5Ω TJ=25°C, VGE=15V TJ=125°C, VGE=15V 50 100 150 200 250 300 I CE, Collector to Emitter Current (A) Eon, Turn-On Energy Loss (mJ) Turn-On Energy Loss vs Collector Current VCE = 400V RG = 2.5Ω TJ = 25°C TJ = 125°C 50 100 150 200 250 300 I CE, Collector to Emitter Current (A) Eoff, Turn-off Energy Loss (mJ) Turn-Off Energy Loss vs Collector Current VCE = 400V VGE = 15V RG = 2.5Ω Eon, 360A Eoff, 360A Eon, 180A Eoff, 180A Eon, 90A Eoff, 90A 0 5 10 15 20 25 Gate Resistance (Ohms) Switching Energy Losses vs Gate ResistanceSwitching Energy Losses (mJ) VCE = 400V VGE = 15V TJ= 125°C Eon, 360A Eoff, 360A Eon, 180A Eoff, 180A Eon, 90A Eoff, 90A 0 2 55 07 5 1 0 0 1 2 5 T J, Junction Temperature (°C) Switching Energy Losses (mJ) Switching Energy Losses vs Junction Temp. VCE = 400V VGE = 15V RG = 2.5Ω

APTGF180DU60T – Rev 1 March, 2004 APT website – http://www.advancedpower.com 6-6 Cies Cres Coes 100 1000 10000 100000 0 1 02 03 04 05 0 C, Capacitance (pF) Capacitance vs Collector to Emitter Voltage VCE, Collector to Emitter Voltage (V) 100 200 300 400 500 600 700 0 200 400 600 800 IC, Collector Current (A) Minimum Switching Safe Operating Area VCE, Collector to Emitter Voltage (V) 0.9 0.35 0.25 0.15 0.05 0.025 Single Pulse 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 Rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Operating Frequency vs Collector Current 100 40 80 120 160 200 240 IC, Collector Current (A) Fmax, Operating Frequency (kHz) VCE = 400V D = 50% RG = 2.5Ω TJ = 125°C APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign pa tents pending. All Rights Reserved.