APTGF180A60TG MICROSEMI | Alldatasheet

Document overview

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Technical content

Features

  • Non Punch Through (NPT) Fast IGBT® - Low voltage drop - Low tail current - Switching frequency up to 100 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated
  • Kelvin emitter for easy drive
  • Very low stray inductance - Symmetrical design - Lead frames for power connections
  • Internal thermistor for temperature monitoring
  • High level of integration Benefits
  • Outstandi ng performance at hi gh frequency operation
  • Stable temperature behavior
  • Very rugged
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • Solderable terminals both for power and signal for easy PCB mounting
  • Easy paralleling due to positive TC of VCEsat
  • Low profile
  • RoHS compliant Absolute maximum ratings These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com VBUS OUT NTC2 0/VBU S NTC1 OUT OUT NTC2 VBUS NTC1 0/VBUS Symbol Parameter Ma x ratings Unit VCES Collector - Emitter Breakdown Voltage 600 V Tc = 25°C 220 IC Continuous Collector Current Tc = 80°C 180 ICM Pulsed Collector Current T c = 25°C 630 A VGE Gate – Emitter Voltage ±20 V PD Maximum Power Dissipation Tc = 25°C 833 W RBSOA Reverse Bias Safe Operating Area T j = 150°C 400A @ 600V VCES = 600V IC = 180A @ Tc = 80°C Phase leg NPT IGBT Power Module

APTGF180A60TG – Rev 2 July, 2006 www.microsemi.com 2 - 6 All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit Tj = 25°C 300 ICES Zero Gate Voltage Collector Current VGE = 0V VCE = 600V Tj = 125°C 1000 µA Tj = 25°C 2.0 2.5 VCE(sat) Collector Emitter saturation Voltage VGE =15V IC = 180A Tj = 125°C 2.2 V VGE(th) Gate Threshold Voltage V GE = VCE, IC = 2mA 3 5 V IGES Gate – Emitter Leakage Current V GE = 20 V, VCE = 0V ±200 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 8.6 Coes Output Capacitance 0.94 Cres Reverse Transfer Capacitance VGE = 0V VCE = 25V f = 1MHz 0.8 nF Qg Total gate Charge 660 Qge Gate – Emitter Charge 580 Qgc Gate – Collector Charge VGS = 15V VBus = 300V IC = 180A 400 nC Td(on) Turn-on Delay Ti me 26 Tr Rise Time 25 Td(off) Turn-off Delay Time 150 Tf Fall Time Inductive Switching (25°C) VGE = 15V VBus = 400V IC = 180A RG = 2.5 Ω 30 ns Td(on) Turn-on Delay Ti me 26 Tr Rise Time 25 Td(off) Turn-off Delay Time 170 Tf Fall Time Inductive Switching (125°C) VGE = 15V VBus = 400V IC = 180A RG = 2.5 Ω 40 ns Eon Turn-on Switchi ng Energy T j = 125°C 8.6 Eoff Turn-off Switching Energy VGE = 15V VBus = 400V IC = 180A RG = 2.5 Ω Tj = 125°C 7 mJ Reverse diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 600 V Tj = 25°C 750 IRM Maximum Reverse Leakage Current V R=600V Tj = 125°C 1500 µA IF DC Forward Current Tc = 70°C 120 A IF = 120A 1.6 1.8 IF = 240A 1.9 VF Diode Forward Voltage IF = 120A T j = 125°C 1.4 V Tj = 25°C 85 trr Reverse Recovery Time Tj = 125°C 160 ns Tj = 25°C 520 Qrr Reverse Recovery Charge IF = 120A VR = 400V di/dt =800A/µs Tj = 125°C 2800 nC

APTGF180A60TG – Rev 2 July, 2006 www.microsemi.com 3 - 6 Thermal and package characteristics Symbol Characteristic Min Typ Max Unit IGBT 0.15 RthJC Junction to Case Thermal Resistance Diode 0.32 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ Operating junction temperature range -40 150 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 100 Torque Mounting torque To Heatsink M5 2.5 4.7 N.m Wt Package Weight 160 g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic Min Typ Max Unit R25 Resistance @ 25°C 50 kΩ B 25/85 T 25 = 298.15 K 3952 K  − TT B RRT 11exp ALL DIMENSIONS MARKED " * " ARE T OLERENCED AS : See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com T: Thermistor temperature RT: Thermistor value at T

APTGF180A60TG – Rev 2 July, 2006 www.microsemi.com 4 - 6 Typical Performance Curve Output characteristics (VGE=15V) TJ=-55°C TJ=25°C TJ=125°C 100 200 300 400 500 600 01234 Ic, Collector Current (A) VCE, Collector to Emitter Voltage (V) 250µs Pulse Test < 0.5% Duty cycle Transfer Characteristics TJ=-55°CTJ=25°C TJ=125°C 100 200 300 400 500 600 0123456789 1 0 V GE, Gate to Emitter Voltage (V) Ic, Collector Current (A) 250µs Pulse Test < 0.5% Duty cycle Ic=36 0A Ic=180A Ic=90A 6 8 10 12 14 16 V GE, Gate to Emitter Voltage (V) VCE, Collector to Emitter Voltage (V) On state Voltage vs Gate to Emitter Volt. TJ = 25°C 250µs Pulse Test < 0.5% Duty cycle Ic=360A Ic=180A Ic=90A 0.5 1.5 2.5 3.5 -50 -25 0 25 50 75 100 125 TJ, Junction Temperature (°C) VCE, Collector to Emitter Voltage (V) On state Voltage vs Junction Temperature 250µs Pulse Test < 0. 5% Duty cycle V GE = 15V 0.70 0.80 0.90 1.00 1.10 1.20 -50 -25 0 25 50 75 100 125 T J, Junction Temperature (°C) Collector to Emitter Breakdown Voltage (Normalized) Breakdown Voltage vs Junction Temp. 100 150 200 250 300 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Ic, DC Collector Current (A) DC Collector Current vs Case Temperature Gate Charge VCE=120V VCE=300V VCE=480V 0 100 200 300 400 500 600 700 Gate Charge (nC) VGE, Gate to Emitter Voltage (V) IC = 180A TJ = 25°C Output Characteristics (VGE=10V) TJ=-55°C TJ=25°C TJ=125°C 100 200 300 400 500 600 01234 Ic, Collector Current (A) VCE, Collector to Emitter Voltage (V) 250µs Pulse Test < 0.5% Duty cycle

APTGF180A60TG – Rev 2 July, 2006 www.microsemi.com 5 - 6 VGE = 15V 50 100 150 200 250 300 I CE, Collector to Emitter Current (A) td(on), Turn-On Delay Time (ns) Turn-On Delay Time vs Collector Current Tj = 25°C VCE = 400V RG = 2.5Ω VGE=15V, TJ=25°C VGE=15V, TJ=125°C 100 150 200 250 50 100 150 200 250 300 ICE, Collector to Emitter Current (A) td(off), Turn-Off Delay Time (ns) Turn-Off Delay Time vs Collector Current VCE = 400V RG = 2.5Ω VGE=15V, TJ=125°C 50 100 150 200 250 300 I CE, Collector to Emitter Current (A) tr, Rise Time (ns) Current Rise Time vs Collector Current VCE = 400V RG = 2.5Ω TJ = 25°C TJ = 125°C 50 100 150 200 250 300 ICE, Collector to Emitter Current (A) tf, Fall Time (ns) Current Fall Time vs Collector Current VCE = 400V, VGE = 15V, RG = 2.5Ω TJ=25°C, VGE=15V TJ=125°C, VGE=15V 50 100 150 200 250 300 ICE, Collector to Emitter Current (A) Eon, Turn-On Energy Loss (mJ) Turn-On Energy Loss vs Collector Current VCE = 400V RG = 2.5Ω TJ = 25°C TJ = 125°C 50 100 150 200 250 300 ICE, Collector to Emitter Current (A) Eoff, Turn-off Energy Loss (mJ) Turn-Off Energy Loss vs Collector Current VCE = 400V VGE = 15V RG = 2.5Ω Eon, 360A Eoff, 360A Eon, 180A Eoff, 180A Eon, 90A Eoff, 90A 0 5 10 15 20 25 Gate Resistance (Ohms) Switching Energy Losses vs Gate ResistanceSwitching Energy Losses (mJ) VCE = 400V VGE = 15V TJ= 125°C Eon, 360A Eoff, 360A Eon, 180A Eoff, 180A Eon, 90A Eoff, 90A 0 25 50 75 100 125 TJ, Junction Temperature (°C) Switching Energy Losses (mJ) Switching Energy Losses vs Junction Temp. VCE = 400V VGE = 15V RG = 2.5Ω

APTGF180A60TG – Rev 2 July, 2006 www.microsemi.com 6 - 6 Cies Cres Coes 100 1000 10000 100000 0 1 02 03 04 05 0 C, Capacitance (pF) Capacitance vs Collector to Emitter Voltage VCE, Collector to Emitter Voltage (V) 100 150 200 250 300 350 400 450 0 200 400 600 800 IC, Collector Current (A) Reverse Bias Safe Operating Area VCE, Collector to Emitter Voltage (V) 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 Rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Operating Frequency vs Collector Current Hard switching ZCS ZVS 120 150 180 40 80 120 160 200 240 I C, Collector Current (A) Fmax, Operating Frequency (kHz) VCE = 400V D = 50% R G = 2.5Ω TJ = 125°C Tc=75°C Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.