APTGF150X60E3 ADPOW | Alldatasheet

Document overview

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  • PDF pages: 3

Technical content

Features

  • Non Punch Through (NPT) Fast IGBT® - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated
  • Kelvin emitter for easy drive
  • Very low stray inductance
  • High level of integration Benefits
  • Outstanding performance at high frequency operation
  • Stable temperature behavior
  • Very rugged
  • Solderable terminals for easy PCB mounting
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • Easy paralleling due to positive TC of VCEsat
  • Low profile

3 Phase bridge

APTGF150X60E3 – Rev 0 July, 2003 APT website – http://www.advancedpower.com 2 - 3 Electrical Characteristics All ratings @ Tj = 25°C unless otherwise specified Symbol Characteristic Test Conditions Min Typ Max Unit BVCES Collector - Emitter Breakdown Voltage VGE = 0V, IC = 500µA 600 V Tj = 25°C 1 500 µA ICES Zero Gate Voltage Collector Current VGE = 0V VCE = 600V Tj = 125°C 1 mA Tj = 25°C 1.7 2.0 2.5 VCE(on) Collector Emitter on Voltage VGE =15V IC = 200A Tj = 125°C 2.2 V VGE(th) Gate Threshold Voltage VGE = VCE , IC = 4 mA 4.5 6.5 V IGES Gate – Emitter Leakage Current VGE = 20V, VCE = 0V 400 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 9000 Cres Reverse Transfer Capacitance VGE = 0V, VCE = 25V f = 1MHz 800 pF Td(on) Turn-on Delay Time 163 Tr Rise Time 43 Td(off) Turn-off Delay Time 253 Tf Fall Time Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 200A RG = 1.5W 33 ns Td(on) Turn-on Delay Time 180 Tr Rise Time 49 Td(off) Turn-off Delay Time 285 Tf Fall Time 41 ns Eoff Turn off Energy Inductive Switching (125°C) VGE = ±15V VBus = 300V IC = 200A RG = 1.5W 6.3 mJ Reverse diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Tj = 25°C 1.25 1.6 VF Diode Forward Voltage IF = 200A VGE = 0V Tj = 125°C 1.2 V Er Reverse Recovery Energy IF = 200A VR = 300V di/dt =800A/µs Tj = 125°C 4.1 mJ Tj = 25°C 13 Qrr Reverse Recovery Charge IF = 200A VR = 300V di/dt =800A/µs Tj = 125°C 20 µC Thermal and package characteristics Symbol Characteristic Min Typ Max Unit IGBT 0.18 RthJC Junction to Case Diode 0.32 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ Operating junction temperature range -40 150 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 125 Torque Mounting torque To heatsink M5 3 4.5 N.m Wt Package Weight 300 g

APTGF150X60E3 – Rev 0 July, 2003 APT website – http://www.advancedpower.com 3 - 3 Package outline PIN 1 PIN 21 ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS : APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.