APTGF100DU120T ADPOW | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 6

Technical content

Features

/g183/g32Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated /g183/g32Kelvin emitter for easy drive /g183/g32Very low stray inductance - Symmetrical design - Lead frames for power connections /g183/g32Internal thermistor for temperature monitoring /g183/g32High level of integration Benefits /g183/g32Outstanding performance at high frequency operation /g183/g32Stable temperature behavior /g183/g32Very rugged /g183/g32Direct mounting to heatsink (isolated package) /g183/g32Low junction to case thermal resistance /g183/g32Solderable terminals both for power and signal for easy PCB mounting /g183/g32Easy paralleling due to positive TC of VCEsat /g183/g32Low profile Absolute maximum ratings These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Follow ed. NTC1 E NTC2 C1 C2 NTC2 NTC1 E Symbol Parameter Max ratings Unit VCES Collector - Emitter Breakdown Voltage 1200 V Tc = 25°C 150 IC Continuous Collector Current Tc = 80°C 100 ICM Pulsed Collector Current T c = 25°C 300 A VGE Gate – Emitter Voltage ±20 V PD Maximum Power Dissipation Tc = 25°C 568 W RBSOA Reverse Bias Safe Operating Area T j = 150°C 300A @ 1200V VCES = 1200V IC = 100A @ Tc = 80°C Dual common source NPT IGBT Power Module

APTGF100DU120T – Rev 1 March, 2004 APT website – http://www.advancedpower.com 2-6 All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit BVCES Collector - Emitter Breakdown Voltage V GE = 0V, IC = 750 µA 1200 V Tj = 25°C 750 ICES Zero Gate Voltage Collector Current VGE = 0V VCE = 1200V T j = 125°C 3750 µA Tj = 25°C 3.2 3.7 VCE(on) Collector Emitter on Voltage VGE =15V IC = 100A Tj = 125°C 4.0 V VGE(th) Gate Threshold Voltage V GE = VCE, IC = 2 mA 4.5 6.5 V IGES Gate – Emitter Leakage Current V GE = 20 V, VCE = 0V 150 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 6900 Coes Output Capacitance 660 Cres Reverse Transfer Capacitance VGE = 0V VCE = 25V f = 1MHz 440 pF Qg Total gate Charge 660 Qge Gate – Emitter Charge 70 Qgc Gate – Collector Charge VGS = 15V VBus = 600V IC = 100A 400 nC Td(on) Turn-on Delay Time 35 Tr Rise Time 65 Td(off) Turn-off Delay Time 320 Tf Fall Time 30 ns Eon Turn-on Switching Energy /g117 10.8 Eoff Turn-off Switching Energy /g118 Inductive Switching (25°C) VGE = 15V VBus = 600V IC = 100A RG = 2.5 /g87 4.6 mJ Td(on) Turn-on Delay Time 35 Tr Rise Time 65 Td(off) Turn-off Delay Time 360 Tf Fall Time 40 ns Eon Turn-on Switching Energy /g117 13.9 Eoff Turn-off Switching Energy /g118 Inductive Switching (125°C) VGE = 15V VBus = 600V IC = 100A RG = 2.5 /g87 6.1 mJ Reverse diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit IF(AV) Maximum Average Forward Current 50% duty cycle Tc = 70°C 120 A IF = 120A 2.0 2.5 IF = 240A 2.3 VF Diode Forward Voltage IF = 120A T j = 125°C 1.8 V Tj = 25°C 370 trr Reverse Recovery Time IF = 120A VR = 800V di/dt =800A/µs Tj = 125°C 500 ns Tj = 25°C 2.64 Qrr Reverse Recovery Charge IF = 120A VR = 800V di/dt =800A/µs Tj = 125°C 13.8 µC /g117 Eon includes diode reverse recovery /g118 In accordance with JEDEC standard JESD24-1

APTGF100DU120T – Rev 1 March, 2004 APT website – http://www.advancedpower.com 3-6 Thermal and package characteristics Symbol Characteristic Min Typ Max Unit IGBT 0.22 RthJC Junction to Case Diode 0.32 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ Operating junction temperature range -40 150 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 100 Torque Mounting torque To heatsink M5 4.7 N.m Wt Package Weight 160 g Temperature sensor NTC Symbol Characteristic Min Typ Max Unit R25 Resistance @ 25°C 68 k/g87 B 25/85 T 25 = 298.16 K 4080 K /g250 /g251 /g249 /g234 /g235 /g233 /g247/g247 /g248 /g246 /g231/g231 /g232 /g230/g45 /g61 TTB RR T 11exp Package outline T: Thermistor temperature RT: Thermistor value at T

APTGF100DU120T – Rev 1 March, 2004 APT website – http://www.advancedpower.com 4-6 Typical Performance Curve Output characteristics (VGE=15V) TJ=25°C TJ=125°C 160 240 320 400 02468 Ic, Collector Current (A) VCE, Collector to Emitter Voltage (V) 250µs Pulse Test < 0.5% Duty cycle Output Characteristics (VGE=10V) TJ=25°C TJ=125°C 100 01234 Ic, Collector Current (A) VCE, Collector to Emitter Voltage (V) 250µs Pulse Test < 0.5% Duty cycle Transfer Characteristics TJ=25°C TJ=125°C 100 200 300 400 500 600 0 4 8 12 16 VGE, Gate to Emitter Voltage (V) Ic, Collector Current (A) 250µs Pulse Test < 0.5% Duty cycle Gate Charge VCE=240V VCE=600V VCE=960V 0 100 200 300 400 500 600 700 Gate Charge (nC) VGE, Gate to Emitter Voltage (V) IC = 100A TJ = 25°C Ic=200A Ic=100A Ic=50A 9 1 01 11 21 31 41 51 6 V GE, Gate to Emitter Voltage (V) On state Voltage vs Gate to Emitter Volt. VCE, Collector to Emitter Voltage (V) TJ = 25°C 250µs Pulse Test < 0.5% Duty cycle Ic=200A Ic=100A Ic=50A -50 -25 0 25 50 75 100 125 T J, Junction Temperature (°C) VCE, Collector to Emitter Voltage (V) On state Voltage vs Junction Temperature 250µs Pulse Test < 0.5% Duty cycle VGE = 15V 0.70 0.75 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 -50 -25 0 25 50 75 100 125 T J, Junction Temperature (°C) Collector to Emitter Breakdown Voltage (Normalized) Breakdown Voltage vs Junction Temp. 100 120 140 160 180 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (°C) Ic, DC Collector Current (A) DC Collector Current vs Case Temperature

APTGF100DU120T – Rev 1 March, 2004 APT website – http://www.advancedpower.com 5-6 VGE = 15V 0 50 100 150 200 250 I CE, Collector to Emitter Current (A) td(on), Turn-On Delay Time (ns) Turn-On Delay Time vs Collector Current VCE = 600V RG = 2.5Ω VGE=15V, TJ=25°C VGE=15V, TJ=125°C 200 250 300 350 400 0 50 100 150 200 250 ICE, Collector to Emitter Current (A) Turn-Off Delay Time vs Collector Current td(off), Turn-Off Delay Time (ns) VCE = 600V RG = 2.5Ω VGE=15V 100 140 180 0 50 100 150 200 250 ICE, Collector to Emitter Current (A) tr, Rise Time (ns) Current Rise Time vs Collector Current VCE = 600V RG = 2.5Ω TJ = 25°C TJ = 125°C 0 50 100 150 200 250 ICE, Collector to Emitter Current (A) tf, Fall Time (ns) Current Fall Time vs Collector Current VCE = 600V, VGE = 15V, RG = 2.5Ω TJ=25°C, VGE=15V TJ=125°C, VGE=15V 0 50 100 150 200 250 ICE, Collector to Emitter Current (A) Turn-On Energy Loss vs Collector Current Eon, Turn-On Energy Loss (mJ) VCE = 600V RG = 2.5Ω TJ = 25°C TJ = 125°C 0 50 100 150 200 250 ICE, Collector to Emitter Current (A) Eoff, Turn-off Energy Loss (mJ) Turn-Off Energy Loss vs Collector Current VCE = 600V VGE = 15V RG = 2.5Ω Eon, 100A Eoff, 100A Eon, 50A Eoff, 50A 0 5 10 15 20 25 Gate Resistance (Ohms) Switching Energy Losses (mJ) Switching Energy Losses vs Gate Resistance VCE = 600V VGE = 15V TJ= 125°C Eon, 100A Eoff, 100A Eon, 50A Eoff, 50A 0 2 55 07 5 1 0 0 1 2 5 TJ, Junction Temperature (°C) Switching Energy Losses (mJ) Switching Energy Losses vs Junction Temp. VCE = 600V VGE = 15V RG = 2.5Ω

APTGF100DU120T – Rev 1 March, 2004 APT website – http://www.advancedpower.com 6-6 Cies Cres Coes 100 1000 10000 0 1 02 03 04 05 0 C, Capacitance (pF) Capacitance vs Collector to Emitter Voltage VCE, Collector to Emitter Voltage (V) 100 150 200 250 300 350 0 400 800 1200 IC, Collector Current (A) Minimum Switching Safe Operating Area VCE, Collector to Emitter Voltage (V) 0.9 0.35 0.25 0.15 0.05 0.025 Single Pulse 0.05 0.1 0.15 0.2 0.25 Rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 10 30 50 70 90 110 I C, Collector Current (A) Operating Frequency vs Collector CurrentFmax, Operating Frequency (kHz) VCE = 600V D = 50% RG = 2.5Ω TJ = 125°C APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign pa tents pending. All Rights Reserved.