APTGF100A120T3AG MICROSEMI | Alldatasheet

Document overview

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Technical content

Features

  • Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated
  • Very low stray inductance
  • Kelvin emitter for easy drive
  • Internal thermistor for temperature monitoring
  • High level of integration
  • AlN substrate for improved thermal performance Benefits
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • Solderable terminals both for power and signal for easy PCB mounting
  • Low profile
  • RoHS Compliant Phase leg NPT IGBT Power Module Power Module VCES = 1200V IC = 100A @ Tc = 100°C

APTGF100A120T3AG – Rev 0 May, 2009 www.microsemi.com 2 – 5 All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit ICES Zero Gate Voltage Collector Current V GE = 0V, VCE = 1200V 250 µA Tj = 25°C 3.2 3.7 VCE(sat) Collector Emitter Saturation Voltage VGE =15V IC = 100A Tj = 125°C 3.9 V VGE(th) Gate Threshold Voltage V GE = VCE , IC = 4mA 4.5 5.5 6.5 V IGES Gate – Emitter Leakage Current V GE = 20V, VCE = 0V 600 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 6.5 Coes Output Capacitance 1 Cres Reverse Transfer Capacitance VGE = 0V VCE = 25V f = 1MHz 0.5 nF QG Gate charge VGE= ±15V ; VCE=600V IC=100A 1.1 µC Td(on) Turn-on Delay Time 120 Tr Rise Time 50 Td(off) Turn-off Delay Time 310 Tf Fall Time Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 100A RG = 5.6Ω 20 ns Td(on) Turn-on Delay Time 130 Tr Rise Time 60 Td(off) Turn-off Delay Time 360 Tf Fall Time Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 100A RG = 5.6Ω 30 ns Eon Turn-on Switching Energy T j = 125°C 12 Eoff Turn-off Switching Energy VGE = ±15V VBus = 600V IC = 100A RG = 5.6Ω Tj = 125°C 5 mJ Isc Short Circuit data VGE ≤15V ; VBus = 900V tp ≤ 10µs ; Tj = 125°C 650 A Reverse diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 1200 V Tj = 25°C 150 IRM Maximum Reverse Leakage Current V R=1200V Tj = 125°C 600 µA IF DC Forward Current Tc = 100°C 60 A IF = 60A 2.6 3.1 IF = 120A 3.2 VF Diode Forward Voltage IF = 60A Tj = 125°C 1.8 V Tj = 25°C 300 trr Reverse Recovery Time Tj = 125°C 380 ns Tj = 25°C 720 Qrr Reverse Recovery Charge IF = 60A VR = 800V di/dt =400A/µs Tj = 125°C 3400 nC

APTGF100A120T3AG – Rev 0 May, 2009 www.microsemi.com 3 – 5 Thermal and package characteristics Symbol Characteristic Min Typ Max Unit IGBT 0.16 RthJC Junction to Case Thermal Resistance Diode 0.50 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ Operating junction temperature range -40 150 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 100 Torque Mounting torque To heatsink M4 2.5 4.7 N.m Wt Package Weight 110 g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic Min Typ Max Unit R25 Resistance @ 25°C 50 kΩ ∆R25/R25 5 % B25/85 T 25 = 298.15 K 3952 K ∆B/B T C=100°C 4 % ⎛ − TTB RRT 11exp See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com T: Thermistor temperature RT: Thermistor value at T

APTGF100A120T3AG – Rev 0 May, 2009 www.microsemi.com 4 – 5 Typical Performance Curve Output Characteristics (VGE=15V) TJ=25°C TJ=125°C 100 125 150 175 200 0123456 VCE (V) IC (A) Output Characteristics VGE=15V VGE=12V VGE=20V VGE=9V 100 125 150 175 200 0123456 VCE (V) IC (A) TJ = 125°C Transfert Characteristics TJ=25°C TJ=125°C 100 125 150 175 200 56789 1 0 1 1 1 2 V GE (V) IC (A) Energy losses vs Collector Current Eon Eoff 0 25 50 75 100 125 150 175 200 IC (A) E (mJ) VCE = 600V VGE = 15V RG = 5.6 Ω TJ = 125°C Eon Eoff 0 1 02 03 04 05 0 Gate Resistance (ohms) E (mJ) VCE = 600V VGE =15V IC = 100A TJ = 125°C Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 100 150 200 250 0 300 600 900 1200 1500 VCE (V) IC (A) VGE=15V TJ=125°C RG=5.6 Ω maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0.04 0.08 0.12 0.16 0.2 rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) IGBT

APTGF100A120T3AG – Rev 0 May, 2009 www.microsemi.com 5 – 5 Forward Characteristic of diode TJ=25°C TJ=125°C 100 125 00 . 511 . 522 . 533 . 5 VF (V) IF (A)ZCS hard switching ZVS 120 150 180 20 40 60 80 100 120 140 I C (A) Fmax, Operating Frequency (kHz) VCE=600V D=50% RG=5.6 Ω TJ=125°C TC=75°C Operating Frequency vs Collector Current maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3 0.1

0.05 Single Pulse

0.1 0.2 0.3 0.4 0.5 0.6 rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) Diode Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.