APTGF100A1202G MICROSEMI | Alldatasheet
Document overview
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Technical content
Features
Non Punch Through (NPT) Fast IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance High level of integration Benefits Outstanding performance at high frequency operation Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat RoHS Compliant All ratings @ Tj = 25°C unless otherwise specified Absolute maximum ratings These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com 10 9 6 11 5 must be shorted together Symbol Parameter Max ratings Unit VCES Collector - Emitter Breakdown Voltage 1200 V Tc = 25°C 135 IC Continuous Collector Current Tc = 80°C 100 ICM Pulsed Collector Current T c = 25°C 300 A VGE Gate – Emitter Voltage ±20 V PD Maximum Power Dissipation Tc = 25°C 568 W RBSOA Reverse Bias Safe Operating Area T j = 150°C 200A @ 1200V VCES = 1200V IC = 100A @ Tc = 80°C Phase leg NPT IGBT Power Module
APTGF100A1202G – Rev 1 October 2012 www.microsemi.com 2-5
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit ICES Zero Gate Voltage Collector Current V GE = 0V, VCE = 1200V 250 µA Tj = 25°C 3.2 3.7 VCE(sat) Collector Emitter Saturation Voltage VGE =15V IC = 100A Tj = 125°C 3.9 V VGE(th) Gate Threshold Voltage V GE = VCE , IC = 4mA 4.5 5.5 6.5 V IGES Gate – Emitter Leakage Current V GE = 20V, VCE = 0V 600 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 6.5 Coes Output Capacitance 1 Cres Reverse Transfer Capacitance VGE = 0V VCE = 25V f = 1MHz 0.5 nF QG Gate charge VGE= ±15V ; VCE=600V IC=100A 1.1 µC Td(on) Turn-on Delay Time 120 Tr Rise Time 50 Td(off) Turn-off Delay Time 310 Tf Fall Time Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 100A RG = 5.6 20 ns Td(on) Turn-on Delay Time 130 Tr Rise Time 60 Td(off) Turn-off Delay Time 360 Tf Fall Time Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 100A RG = 5.6 30 ns Eon Turn-on Switching Energy T j = 125°C 12 Eoff Turn-off Switching Energy VGE = ±15V VBus = 600V IC = 100A RG = 5.6 Tj = 125°C 5 mJ Isc Short Circuit data VGE ≤15V ; VBus = 900V tp ≤ 10µs ; Tj = 125°C 650 A RthJC Junction to Case Thermal Resistance 0.19 °C/W Reverse diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 1200 V IRM Maximum Reverse Leakage Current V R=1200V 250 µA IF DC Forward Current Tc = 80°C 100 A IF = 100A 2.4 3 IF = 150A 2.7 VF Diode Forward Voltage IF = 100A Tj = 125°C 1.8 V Tj = 25°C 385 trr Reverse Recovery Time Tj = 125°C 480 ns Tj = 25°C 1055 Qrr Reverse Recovery Charge IF = 100A VR = 800V di/dt =200A/µs Tj = 125°C 5240 nC RthJC Junction to Case Thermal Resistance 0.55 °C/W
APTGF100A1202G – Rev 1 October 2012 www.microsemi.com 3-5 Thermal and package characteristics Symbol Characteristic Min Typ Max Unit VISOL RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz 4000 V TJ Operating junction temperature range -40 150 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 100 Torque Mounting torque To heatsink M4 2 3 N.m Wt Package Weight 75 g Typical Performance Curve Forward Characteristic of diode TJ=25°C TJ=125°C 100 125 150 175 200 0 0.5 1 1.5 2 2.5 3 VF (V) IF (A)ZCS hard switching ZVS 100 0 20 40 60 80 100 120 140 I C (A) Fmax, Operating Frequency (kHz) VCE=600V D=50% RG=5.6 Ω TJ=125°C TC=75°C Operating Frequency vs Collector Current maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration D = 0.9 0.7 0.5 0.3 0.1
0.05 Single Pulse
0.1 0.2 0.3 0.4 0.5 0.6 rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) Diode
APTGF100A1202G – Rev 1 October 2012 www.microsemi.com 4-5 Output Characteristics (VGE=15V) TJ=25°C TJ=125°C 100 125 150 175 200 0123456 VCE (V) IC (A) Output Characteristics VGE=15V VGE=12V VGE=20V VGE=9V 100 125 150 175 200 0123456 VCE (V) IC (A) TJ = 125°C Transfert Characteristics TJ=25°C TJ=125°C 100 125 150 175 200 5 6 7 8 9 10 11 12 VGE (V) IC (A) Energy losses vs Collector Current Eon Eoff 0 25 50 75 100 125 150 175 200 I C (A) E (mJ) VCE = 600V VGE = 15V RG = 5.6 Ω TJ = 125°C Eon Eoff 0 1 02 03 04 05 0 Gate Resistance (ohms) E (mJ) VCE = 600V VGE =15V IC = 100A TJ = 125°C Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 100 150 200 250 0 300 600 900 1200 1500 VCE (V) IC (A) VGE=15V TJ=125°C RG=5.6 Ω maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3 0.1 0.04 0.08 0.12 0.16 0.2 rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) IGBT
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