APTDF100H1201G MICROSEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Features

  • Ultra fast recovery times
  • Soft recovery characteristics
  • High blocking voltage
  • High current
  • Low leakage current
  • Very low stray inductance
  • High level of integration Benefits
  • Outstanding performance at high frequency operation
  • Low losses
  • Low noise switching
  • Solderable terminals for easy PCB mounting
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • RoHS Compliant Fast Diode Full Bridge Power Module VRRM = 1200V IC = 100A @ Tc = 60°C

APTDF100H1201G – Rev 0 August, 2007 www.microsemi.com 2-4 All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit IF = 100A 2.4 3 IF = 150A 2.7 VF Diode Forward Voltage IF = 100A T j = 125°C 1.8 V Tj = 25°C 100 IRM Maximum Reverse Leakage Current V R = 1200V Tj = 125°C 500 µA CT Junction Capacitance V R = 200V 110 pF Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Tj = 25°C 385 trr Reverse Recovery Time Tj = 125°C 480 ns Tj = 25°C 1055 Qrr Reverse Recovery Charge Tj = 125°C 5240 nC Tj = 25°C 6 IRRM Reverse Recovery Current IF = 100A VR = 800V di/dt = 200A/µs Tj = 125°C 19 A trr Reverse Recovery Time 210 ns Qrr Reverse Recovery Charge 9.4 µC IRRM Reverse Recovery Current IF = 100A VR = 800V di/dt=1000A/µs Tj = 125°C 70 A Thermal and package characteristics Symbol Characteristic Min Typ Max Unit RthJC Junction to Case Thermal Resistance 0.55 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ Operating junction temperature range -40 175 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 100 Torque Mounting torque To heatsink M4 2.5 4.7 N.m Wt Package Weight 80 g

APTDF100H1201G – Rev 0 August, 2007 www.microsemi.com 3-4 Typical Performance Curve 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0.1 0.2 0.3 0.4 0.5 0.6 Rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration TJ=25°C TJ=125°C 100 150 200 250 300 V F, Anode to Cathode Voltage (V) IF, Forward Current (A) Forward Current vs Forward Voltage Trr vs. Current Rate of Charge 50 A 100 A 150 A 100 200 300 400 500 600 0 200 400 600 800 1000 1200 -diF/dt (A/µs) trr, Reverse Recovery Time (ns) TJ=125°C VR=800V QRR vs. Current Rate Charge 50 A 100 A 150 A 0 200 400 600 800 1000 1200 -diF/dt (A/µs) QRR, Reverse Recovery Charge (µC) TJ=125°C VR=800V IRRM vs. Current Rate of Charge 50 A

100 A150 A

0 200 400 600 800 1000 1200 -diF/dt (A/µs) IRRM, Reverse Recovery Current (A) TJ=125°C VR=800V Capacitance vs. Reverse Voltage 200 400 600 800 1 10 100 1000 VR, Reverse Voltage (V) C, Capacitance (pF) 100 120 25 50 75 100 125 150 175 Case Temperature (ºC) IF(AV) (A) Max. Average Forward Current vs. Case Temp. Duty Cycle = 0.5 TJ=175°C

APTDF100H1201G – Rev 0 August, 2007 www.microsemi.com 4-4 See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.