APTDC10H1201G MICROSEMI | Alldatasheet
Document overview
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- PDF pages: 3
Technical content
Features
- SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF
- Very low stray inductance
- High level of integration Benefits
- Outstanding performance at high frequency operation
- Low losses
- Low noise switching
- Solderable terminals for easy PCB mounting
- Direct mounting to heatsink (isolated package)
- Low junction to case thermal resistance
- RoHS Compliant SiC Diode Full Bridge Power Module
APTDC10H1201G – Rev 0 February, 2009 www.microsemi.com 2-3 All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic Test Conditions Min Typ Max Unit Tj = 25°C 1.6 1.8 VF Diode Forward Voltage I F = 10A Tj = 175°C 2.3 3.0 V Tj = 25°C 32 200 IRM Maximum Reverse Leakage Current V R = 1200V Tj = 175°C 56 1000 µA QC Total Capacitive Charge IF = 10A, VR = 600V di/dt = 500A/µs 40 nC f = 1MHz, VR = 200V 96 C Total Capacitance f = 1MHz, VR = 400V 69 pF Thermal and package characteristics Symbol Characteristic Min Typ Max Unit RthJC Junction to Case Thermal Resistance 1.8 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ Operating junction temperature range -40 175 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 100 Torque Mounting torque To heatsink M4 2.5 4.7 N.m Wt Package Weight 80 g See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com
APTDC10H1201G – Rev 0 February, 2009 www.microsemi.com 3-3 Typical Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0.4 0.8 1.2 1.6 Rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) Forward Characteristics TJ=25°C TJ=75°C TJ=125°C TJ=175°C 0 0.5 1 1.5 2 2.5 3 3.5 VF Forward Voltage (V) IF Forward Current (A) Reverse Characteristics TJ=25°C TJ=75°C TJ=125°C TJ=175°C 100 400 600 800 1000 1200 1400 1600 VR Reverse Voltage (V) IR Reverse Current (µA) Capacitance vs.Reverse Voltage 100 200 300 400 500 600 700 1 10 100 1000 V R Reverse Voltage C, Capacitance (pF) Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.