APTCV40H60CT1G MICROSEMI | Alldatasheet

Document overview

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  • PDF pages: 10

Technical content

Features

  • Q2, Q4 CoolMOS™ - Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged - Fast intrinsic diode
  • Q1, Q3 Trench & Field Stop IGBT® - Low voltage drop - Switching frequency up to 20 kHz - RBSOA & SCSOA rated - Low tail current
  • SiC Schottky Diode (CR1, CR3) - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF
  • Very low stray inductance
  • Internal thermistor for temperature monitoring
  • High level of integration Benefits
  • Outstanding performance at high frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • Solderable terminals both for power and signal for easy PCB mounting
  • Low profile
  • RoHS Compliant Full - Bridge CoolMOS & Trench + Field Stop® IGBT Power module

APTCV50H60CT1G – Rev 0 November, 2007 www.microsemi.com 2-1 0 1. Top switches

1.1 Top Trench + Field Stop IGBT® characteristics

Symbol Parameter Max ratings Unit VCES Collector - Emitter Breakdown Voltage 600 V TC = 25°C 80 IC Continuous Collector Current TC = 80°C 50 ICM Pulsed Collector Current T C = 25°C 100 A VGE Gate – Emitter Voltage ±20 V PD Maximum Power Dissipation TC = 25°C 176 W RBSOA Reverse Bias Safe Operating Area TJ = 150°C 100A @ 550V

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit ICES Zero Gate Voltage Collector Current V GE = 0V, VCE = 600V 250 µA Tj = 25°C 1.5 1.9 VCE(sat) Collector Emitter Saturation Voltage VGE =15V IC = 50A Tj = 150°C 1.7 V VGE(th) Gate Threshold Voltage V GE = VCE , IC = 600µA 5.0 5.8 6.5 V IGES Gate – Emitter Leakage Current V GE = 20V, VCE = 0V 600 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 3150 Coes Output Capacitance 200 Cres Reverse Transfer Capacitance VGE = 0V VCE = 25V f = 1MHz 95 pF Td(on) Turn-on Delay Time 110 Tr Rise Time 45 Td(off) Turn-off Delay Time 200 Tf Fall Time Inductive Switching (25°C) VGE = ±15V VBus = 300V IC = 50A RG = 8.2Ω 40 ns Td(on) Turn-on Delay Time 120 Tr Rise Time 50 Td(off) Turn-off Delay Time 250 Tf Fall Time Inductive Switching (150°C) VGE = ±15V VBus = 300V IC = 50A RG = 8.2Ω 60 ns Tj = 25°C 0.3 Eon Turn-on Switching Energy Tj = 150°C 0.43 mJ Tj = 25°C 1.35 Eoff Turn-off Switching Energy VGE = ±15V VBus = 300V IC = 50A RG = 8.2Ω Tj = 150°C 1.75 mJ RthJC Junction to Case Thermal resistance 0.85 °C/W

APTCV50H60CT1G – Rev 0 November, 2007 www.microsemi.com 3-1 0

1.2 Top SiC diode characteristics (CR1, CR3)

Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 600 V Tj = 25°C 50 200 IRM Maximum Reverse Leakage Current V R=600V Tj = 125°C 100 1000 µA IF(AV) Maximum Average Forward Current 50% duty cycle Tc = 100°C 10 A Tj = 25°C 1.6 1.8 VF Diode Forward Voltage I F = 10A Tj = 175°C 2 2.4 V QC Total Capacitive Charge IF = 10A, VR = 300V di/dt =500A/µs 14 nC f = 1MHz, VR = 200V 65 C Total Capacitance f = 1MHz, VR = 400V 50 pF RthJC Junction to Case Thermal resistance 2.5 °C/W 2. Bottom switches

2.1 Bottom CoolMOS™ characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit VGS = 0V,VDS = 600V Tj = 25°C 100 IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 600V Tj = 125°C 5000 µA RDS(on) Drain – Source on Resistance VGS = 10V, ID = 24.5A 83 mΩ VGS(th) Gate Threshold Voltage V GS = VDS, ID = 3mA 3 4 5 V IGSS Gate – Source Leakage Current V GS = ±20 V, VDS = 0V 100 nA Symbol Parameter Max ratings Unit VDSS Drain - Source Breakdown Voltage 600 V Tc = 25°C 36 ID Continuous Drain Current Tc = 80°C 27 IDM Pulsed Drain current 115 A VGS Gate - Source Voltage ±20 V RDSon Drain - Source ON Resistance 83 mΩ PD Maximum Power Dissipation T c = 25°C 250 W IAR Avalanche current (repetitive and non repetitive) 20 A EAR Repetitive Avalanche Energy 1 EAS Single Pulse Avalanche Energy 1800 mJ

APTCV50H60CT1G – Rev 0 November, 2007 www.microsemi.com 4-1 0 Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Ciss Input Capacitance 7.2 Crss Reverse Transfer Capacitance VGS = 0V ; VDS = 25V f = 1MHz 0.041 nF Qg Total gate Charge 250 Qgs Gate – Source Charge 43 Qgd Gate – Drain Charge VGS = 10V VBus = 300V ID = 36A 135 nC Td(on) Turn-on Delay Time 21 Tr Rise Time 30 Td(off) Turn-off Delay Time 240 Tf Fall Time Inductive Switching (125°C) VGS = 10V VBus = 400V ID = 36A RG = 5Ω 52 ns Eon Turn-on Switching Energy 531 Eoff Turn-off Switching Energy Inductive switching @ 25°C VGS = 10V ; VBus = 400V ID = 36A ; RG = 5Ω 590 µJ Eon Turn-on Switching Energy 762 Eoff Turn-off Switching Energy Inductive switching @ 125°C VGS = 10V ; VBus = 400V ID = 36A ; RG = 5Ω 725 µJ RthJC Junction to Case Thermal resistance 0.5 °C/W Source - Drain diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Tc = 25°C 36 IS Continuous Source current (Body diode) Tc = 80°C 27 A VSD Diode Forward Voltage V GS = 0V, IS = - 36A 1.2 V dv/dt Peak Diode Recovery X 40 V/ns Tj = 25°C 210 trr Reverse Recovery Time Tj = 125°C 350 ns Tj = 25°C 2 Qrr Reverse Recovery Charge IS = - 36A VR = 350V diS/dt = 100A/µs Tj = 125°C 5.4 µC X dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 36A di/dt ≤ 100A/µs VR ≤ VDSS Tj ≤ 150°C

APTCV50H60CT1G – Rev 0 November, 2007 www.microsemi.com 5-1 0 3. Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic Min Typ Max Unit R25 Resistance @ 25°C 50 kΩ B 25/85 T 25 = 298.15 K 3952 K ⎛ − TTB RRT 11exp 4. Package characteristics Symbol Characteristic Min Typ Max Unit VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ Operating junction temperature range -40 150* TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 100 Torque Mounting torque To heatsink M4 2.5 4.7 N.m Wt Package Weight 80 g Tj=175°C for Trench & Field Stop IGBT 5. SP1 Package outline (dimensions in mm) See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com T: Thermistor temperature RT: Thermistor value at T

APTCV50H60CT1G – Rev 0 November, 2007 www.microsemi.com 6-1 0 6. Top switches curves

6.1 Top Trench + Field Stop IGBT® typical performance curves

Output Characteristics (VGE=15V) TJ=25°C TJ=25°C TJ=125°C TJ=150°C 100 00 . 511 . 522 . 53 VCE (V) IC (A) Output Characteristics VGE=15V VGE=13V VGE=19V VGE=9V 100 00 . 511 . 522 . 533 . 5 V CE (V) IC (A) TJ = 150°C Transfert Characteristics TJ=25°C TJ=25°C TJ=125°C TJ=150°C 100 56789 1 0 1 1 1 2 VGE (V) IC (A) Energy losses vs Collector Current Eon Eoff 0.5 1.5 2.5 3.5 0 2 04 06 08 0 1 0 0 IC (A) E (mJ) VCE = 300V VGE = 15V RG = 8.2Ω TJ = 150°C Eon Eoff 0.5 1.5 2.5 5 1 52 53 54 55 56 5 Gate Resistance (ohms) E (mJ) VCE = 300V VGE =15V IC = 50A TJ = 150°C Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 100 125 0 100 200 300 400 500 600 700 V CE (V) IC (A) VGE=15V TJ=150°C RG=8.2Ω maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3 0.1

0.05 Single Pulse

0.2 0.4 0.6 0.8 Rectangular Pulse Duration in Seconds Thermal Impedance (°C/W)

APTCV50H60CT1G – Rev 0 November, 2007 www.microsemi.com 7-1 0

6.2 Top SiC diode typical performance curves

Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0.5 1.5 2.5 Rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) Forward Characteristics TJ=25°C TJ=75°C TJ=125°C TJ=175°C 0 0.5 1 1.5 2 2.5 3 3.5 VF Forward Voltage (V) IF Forward Current (A) Reverse Characteristics TJ=25°C TJ=75°C TJ=125°C TJ=175°C 120 160 200 200 300 400 500 600 700 800 VR Reverse Voltage (V) IR Reverse Current (µA) Capacitance vs.Reverse Voltage 100 150 200 250 300 350 400 1 10 100 1000 V R Reverse Voltage C, Capacitance (pF)

APTCV50H60CT1G – Rev 0 November, 2007 www.microsemi.com 8-1 0 7. Bottom switches curves

7.1 Bottom CoolMOS™ typical performance curves

0.9 0.7 0.5 0.3 0.1 0.1 0.2 0.3 0.4 0.5 0.6 rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 5.5V 6.5V 0123456 V DS, Drain to Source Voltage (V) ID, Drain Current (A) VGS=15&10V Low Voltage Output Characteristics Transfert Characteristics TJ=25°C TJ=125°C TJ=125°C 02468 1 0 V GS, Gate to Source Voltage (V) ID, Drain Current (A) VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle RDS(on) vs Drain Current VGS=10V VGS=20V 0.9 0.95 1.05 1.1 1.15 1.2 0 1 02 03 04 05 06 07 08 0 ID, Drain Current (A) RDS(on) Drain to Source ON Resistance Normalized to VGS=10V @ 18A 25 50 75 100 125 150 T C, Case Temperature (°C) ID, DC Drain Current (A) DC Drain Current vs Case Temperature

APTCV50H60CT1G – Rev 0 November, 2007 www.microsemi.com 9-1 0 0.8 0.9 1.0 1.1 1.2 25 50 75 100 125 150 TJ, Junction Temperature (°C) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) ON resistance vs Temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 25 50 75 100 125 150 T J, Junction Temperature (°C) RDS(on), Drain to Source ON resistance (Normalized) VGS=10V ID= 18A Threshold Voltage vs Temperature 0.70 0.75 0.80 0.85 0.90 0.95 1.00 25 50 75 100 125 150 T C, Case Temperature (°C) VGS(TH), Threshold Voltage (Normalized) Maximum Safe Operating Area 10 ms 1 ms 100 µs 100 1000 1 10 100 1000 VDS, Drain to Source Voltage (V) ID, Drain Current (A) limited by RDSon Single pulse TJ=150°C TC=25°C Ciss Crss Coss 100 1000 10000 100000 0 1 02 03 04 05 0 VDS, Drain to Source Voltage (V) C, Capacitance (pF) Capacitance vs Drain to Source Voltage VDS=120V VDS=300V VDS=480V 0 50 100 150 200 250 300 Gate Charge (nC) VGS, Gate to Source Voltage (V) Gate Charge vs Gate to Source Voltage ID=36A TJ=25°C

APTCV50H60CT1G – Rev 0 November, 2007 www.microsemi.com 10 - 10 TJ=25°C TJ=150°C 100 1000 VSD, Source to Drain Voltage (V) IDR, Reverse Drain Current (A) Source to Drain Diode Forward Voltage Delay Times vs Current td(on) td(off) 100 150 200 250 300 0 1 02 03 04 05 06 0 ID, Drain Current (A) td(on) and td(off) (ns) VDS=400V RG=5Ω TJ=125°C L=100µH Rise and Fall times vs Current tr tf 0 1 02 03 04 05 06 0 I D, Drain Current (A) tr and tf (ns) VDS=400V RG=5Ω TJ=125°C L=100µH Switching Energy vs Current Eon Eoff 0.2 0.4 0.6 0.8 1.2 1.4 1.6 0 1 02 03 04 05 06 0 ID, Drain Current (A) Switching Energy (mJ) VDS=400V RG=5Ω TJ=125°C L=100µH Eon Eoff 0 1 02 03 04 05 0 Gate Resistance (Ohms) Switching Energy (mJ) Switching Energy vs Gate Resistance VDS=400V ID=36A TJ=125°C L=100µH hard switching ZCS ZVS 120 160 200 5 1 01 52 02 53 03 5 I D, Drain Current (A) Frequency (kHz) Operating Frequency vs Drain Current VDS=400V D=50% RG=5Ω TJ=125°C TC=75°C Microsemi reserves the right to change, without notice, the specifications and information contained herein “COOLMOS™ comprise a new family of transistors developed by In fineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.