APTC80DSK29T3 ADPOW | Alldatasheet

Document overview

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Technical content

Features

  • Ul tra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged
  • Kelvin source for easy drive
  • Very low stray inductance - Symmetrical design
  • Internal thermistor for temperature monitoring
  • High level of integration Benefits
  • Outstandi ng performance at hi gh frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • Solderable terminals both for power and signal for easy PCB mounting
  • Low profile
  • Each leg can be easily paralleled to achieve a single buck of twice the current capability Dual Buck chopper Super Junction MOSFET Power Module

APTC80DSK29T3 – Rev 0 September, 2004 APT website – http://www.advancedpower.com 2 – 6 All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit BVDSS Drain - Source Breakdown Voltage V GS = 0V, ID = 250µA 800 V VGS = 0V,VDS = 800V Tj = 25°C 25 IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 800V T j = 125°C 250 µA RDS(on) Drain – Source on Resistance V GS = 10V, ID = 7.5A 290 mΩ VGS(th) Gate Threshold Voltage V GS = VDS, ID = 1mA 2.1 3 3.9 V IGS S Gate – Source Leakage Current V GS = ±20 V, VDS = 0V ±100 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cis s Input Capacitance 2254 Coss Output Capacitance 1046 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 54 pF Qg Total gate Charge 90 Qgs Gate – Source Charge 11 Qgd Gate – Drain Charge VGS = 10V VBus = 400V ID = 15A 45 nC Td(on) Turn-on Delay Ti me 10 Tr Rise Time 13 Td(off) Turn-off Delay Time 83 Tf Fall Time Inductive switching @125°C VGS = 15V VBus = 533V ID = 15A RG = 5Ω 35 ns Eon Turn-on Switchi ng Energy X 243 Eoff Turn-off Switching Energy Y Inductive switching @ 25°C VGS = 15V, VBus = 533V ID = 15A, RG = 5Ω 139 µJ Eon Turn-on Switchi ng Energy X 425 Eoff Turn-off Switching Energy Y Inductive switching @ 125°C VGS = 15V, VBus = 533V ID = 15A, RG = 5Ω 171 µJ Diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 1000 V Tj = 25°C 250 IRM Maximum Reverse Leakage Current V R=1000V Tj = 125°C 750 µA IF(A V) Maximum Average Forward Current 50% duty cycle Tc = 70°C 30 A IF = 30A 1.9 2.3 IF = 60A 2.2 VF Diode Forward Voltage IF = 30A T j = 125°C 1.7 V Tj = 25°C 290 trr Reverse Recovery Time Tj = 125°C 390 ns Tj = 25°C 670 Qrr Reverse Recovery Charge IF = 30A VR = 667V di/dt=200A/µs Tj = 125°C 2350 nC X Eon includes diode reverse recovery. Y In accordance with JEDEC standard JESD24-1.

APTC80DSK29T3 – Rev 0 September, 2004 APT website – http://www.advancedpower.com 3 – 6 Thermal and package characteristics Symbol Characteristic Min Typ Max Unit IGBT 0.8 RthJC Junction to Case Diode 1.2 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ Operating junction temperature range -40 150 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 100 Torque Mounting torque To heatsink M4 4.7 N.m Wt Package Weight 110 g Temperature sensor NTC Symbol Characteristic Min Typ Max Unit R25 Resistance @ 25°C 68 kΩ B 25/85 T 25 = 298.16 K 4080 K  − TT B RRT 11exp Package outline T: Thermistor temperature RT: Thermistor value at T

APTC80DSK29T3 – Rev 0 September, 2004 APT website – http://www.advancedpower.com 4 – 6 Typical performance Curve 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 4.5V 5.5V 6.5V 0 5 10 15 20 25 V DS, Drain to Source Voltage (V) ID, Drain Current (A) VGS=15&10V Low Voltage Output Characteristics Transfert Characteristics TJ=-55°C TJ=25°C TJ=125°C 012345678 V GS, Gate to Source Voltage (V) ID, Drain Current (A) VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle RDS(on) vs Drain Current VGS=10V VGS=20V 0.8 0.9 1.1 1.2 1.3 1.4 0 5 10 15 20 25 30 I D, Drain Current (A) RDS(on) Drain to Source ON Resistance Normalized to VGS=10V @ 7.5A 25 50 75 100 125 150 T C, Case Temperature (°C) ID, DC Drain Current (A) DC Drain Current vs Case Temperature

APTC80DSK29T3 – Rev 0 September, 2004 APT website – http://www.advancedpower.com 5 – 6 0.90 0.95 1.00 1.05 1.10 1.15 -50 0 50 100 150 T J, Junction Temperature (°C) BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature ON resistance vs Temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 0 50 100 150 T J, Junction Temperature (°C) RDS(on), Drain to Source ON resistance (Normalized) VGS=10V ID= 7.5A Threshold Voltage vs Temperature 0.7 0.8 0.9 1.0 1.1 1.2 -50 0 50 100 150 TC, Case Temperature (°C) VGS(TH), Threshold Voltage (Normalized) Maximum Safe Operating Area 100ms 10ms 1ms 100µs 100 1 10 100 1000 VDS, Drain to Source Voltage (V) ID, Drain Current (A) limited by RDSon Single pulse TJ=150°C Ciss Crss Coss 100 1000 10000 0 1 02 03 04 05 0 VDS, Drain to Source Voltage (V) C, Capacitance (pF) Capacitance vs Drain to Source Voltage VDS=160V VDS=400V VDS=640V 0 2 04 06 08 0 1 0 0 Gate Charge (nC) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) ID=15A TJ=25°C

APTC80DSK29T3 – Rev 0 September, 2004 APT website – http://www.advancedpower.com 6 – 6 Delay Times vs Current td(on) td(off) 100 5 1 01 52 02 5 ID, Drain Current (A) td(on) and td(off) (ns) VDS=533V RG=5Ω TJ=125°C L=100µH Rise and Fall times vs Current tr tf 5 1 01 52 02 5 ID, Drain Current (A) tr and tf (ns) VDS=533V RG=5Ω TJ=125°C L=100µH Switching Energy vs Current Eon Eoff 100 200 300 400 500 600 700 800 5 1 01 52 02 5 ID, Drain Current (A) Eon and Eoff (µJ) VDS=533V RG=5Ω TJ=125°C L=100µH Eon Eoff 250 500 750 1000 1250 0 1 02 03 04 05 0 Gate Resistance (Ohms) Switching Energy (µJ) Switching Energy vs Gate Resistance VDS=533V ID=15A TJ=125°C L=100µH Hard switching ZCS ZVS 100 150 200 250 300 350 400 468 1 0 1 2 1 4 ID, Drain Current (A) Frequency (kHz) Operating Frequency vs Drain Current VDS=533V D=50% RG=5Ω TJ=125°C TC=75°C TJ=25°C TJ=150°C 100 1000 0.2 0.6 1 1.4 1.8 VSD, Source to Drain Voltage (V) IDR, Reverse Drain Current (A) Source to Drain Diode Forward Voltage “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.