APTC80A15SCTG MICROSEMI | Alldatasheet

Document overview

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Technical content

Features

  • Ul tra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated
  • Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF
  • Kelvin source for easy drive
  • Very low stray inductance - Symmetrical design - Lead frames for power connections
  • Internal thermistor for temperature monitoring
  • High level of integration Benefits
  • Outstandi ng performance at hi gh frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • Solderable terminals both for power and signal for easy PCB mounting
  • Low profile
  • RoHS Compliant Phase leg Serie & SiC parallel diodes Super Junction MOSFET Power Module

APTC80A15SCTG – Rev 2 July, 2006 www.microsemi.com 2 – 7 All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit VGS = 0V,VDS = 800V Tj = 25°C 50 IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 800V T j = 125°C 375 µA RDS(on) Drain – Source on Resistance V GS = 10V, ID = 14A 150 mΩ VGS(th) Gate Threshold Voltage V GS = VDS, ID = 2mA 2.1 3 3.9 V IGS S Gate – Source Leakage Current V GS = ±20 V, VDS = 0V ±150 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cis s Input Capacitance 4507 Coss Output Capacitance 2092 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 108 pF Qg Total gate Charge 180 Qgs Gate – Source Charge 22 Qgd Gate – Drain Charge VGS = 10V VBus = 400V ID = 28A 90 nC Td(on) Turn-on Delay Ti me 10 Tr Rise Time 13 Td(off) Turn-off Delay Time 83 Tf Fall Time Inductive switching @125°C VGS = 15V VBus = 533V ID = 28A RG = 2.5Ω 35 ns Eon Turn-on Switching Energy 291 Eoff Turn-off Switching Energy Inductive switching @ 25°C VGS = 15V, VBus = 533V ID = 28A, RG = 2.5Ω 278 µJ Eon Turn-on Switching Energy 510 Eoff Turn-off Switching Energy Inductive switching @ 125°C VGS = 15V, VBus = 533V ID = 28A, RG = 2.5Ω 342 µJ Series diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Ma x Unit VRRM Maximum Peak Repetitive Reverse Voltage 200 V Tj = 25°C 250 IRM Maximum Reverse Leakage Current V R=200V Tj = 125°C 500 µA IF DC Forward Current T c = 85°C 30 A IF = 30A 1.1 1.15 IF = 60A 1.4 VF Diode Forward Voltage IF = 30A T j = 125°C 0.9 V Tj = 25°C 24 trr Reverse Recovery Time Tj = 125°C 48 ns Tj = 25°C 33 Qrr Reverse Recovery Charge IF = 30A VR = 133V di/dt = 200A/µs Tj = 125°C 150 nC

APTC80A15SCTG – Rev 2 July, 2006 www.microsemi.com 3 – 7 Parallel diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 1200 V Tj = 25°C 150 600 IRM Maximum Reverse Leakage Current V R=1200V Tj = 175°C 300 3000 µA IF DC Forward Current Tc = 125°C 15 A Tj = 25°C 1.6 1.8 VF Diode Forward Voltage I F = 15A Tj = 175°C 2.6 3.0 V QC Total Capacitive Charge IF = 15A, VR = 600V di/dt =1000A/µs 42 nC f = 1MHz, VR = 200V 135 Q Total Capacitance f = 1MHz, VR = 400V 99 pF Thermal and package characteristics Symbol Characteristic Min Typ Max Unit Transistor 0.45 Series diode 1.2 RthJC Junction to Case Thermal Resistance Parallel diode 1.0 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ Operating junction temperature range -40 150 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 100 Torque Mounting torque To Heatsink M5 2.5 4.7 N.m Wt Package Weight 160 g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic Min Typ Max Unit R25 Resistance @ 25°C 50 kΩ B 25/85 T 25 = 298.15 K 3952 K  − TT B RRT 11exp A LL DIME NSIONS MARKE D " * " A RE TOLERENCED AS : See application note APT0501 - Mounting Instructions for SP4 Power Modules on www.microsemi.com T: Thermistor temperature RT: Thermistor value at T

APTC80A15SCTG – Rev 2 July, 2006 www.microsemi.com 4 – 7 Typical CoolMOS Performance Curve 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 4.5V 5.5V 6.5V 0 5 10 15 20 25 V DS, Drain to Source Voltage (V) ID, Drain Current (A) VGS=15&10V Low Voltage Output Characteristics Transfert Characteristics TJ=-55°C TJ=-55°C TJ=25°C TJ=125°C TJ=125°C 100 012345678 V GS, Gate to Source Voltage (V) ID, Drain Current (A) VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle RDS(on) vs Drain Current VGS=10V VGS=20V 0.8 0.9 1.1 1.2 1.3 1.4 0 1 02 03 04 05 06 0 I D, Drain Current (A) RDS(on) Drain to Source ON Resistance Normalized to VGS=10V @ 14A 25 50 75 100 125 150 T C, Case Temperature (°C) ID, DC Drain Current (A) DC Drain Current vs Case Temperature

APTC80A15SCTG – Rev 2 July, 2006 www.microsemi.com 5 – 7 0.90 0.95 1.00 1.05 1.10 1.15 -50 0 50 100 150 T J, Junction Temperature (°C) BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature ON resistance vs Temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 0 50 100 150 T J, Junction Temperature (°C) RDS(on), Drain to Source ON resistance (Normalized) VGS=10V ID= 14A Threshold Voltage vs Temperature 0.7 0.8 0.9 1.0 1.1 1.2 -50 0 50 100 150 TC, Case Temperature (°C) VGS(TH), Threshold Voltage (Normalized) Maximum Safe Operating Area 100ms 1ms 100µs 100 1000 1 10 100 1000 VDS, Drain to Source Voltage (V) ID, Drain Current (A) limited by RDSon Single pulse TJ=150°C TC=25°C Ciss Crss Coss 100 1000 10000 100000 0 1 02 03 04 05 0 VDS, Drain to Source Voltage (V) C, Capacitance (pF) Capacitance vs Drain to Source Voltage VDS=160V VDS=400V VDS=640V 0 40 80 120 160 200 Gate Charge (nC) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) ID=28A TJ=25°C

APTC80A15SCTG – Rev 2 July, 2006 www.microsemi.com 6 – 7 Delay Times vs Current td(on) td(off) 100 10 20 30 40 50 ID, Drain Current (A) td(on) and td(off) (ns) VDS=533V RG=2.5Ω TJ=125°C L=100µH Rise and Fall times vs Current tr tf 10 20 30 40 50 ID, Drain Current (A) tr and tf (ns) VDS=533V RG=2.5Ω TJ=125°C L=100µH Switching Energy vs Current Eon Eoff 150 300 450 600 750 900 10 20 30 40 50 ID, Drain Current (A) Eon and Eoff (µJ) VDS=533V RG=2.5Ω TJ=125°C L=100µH Eon Eoff Eoff 500 1000 1500 2000 2500 0 5 10 15 20 25 Gate Resistance (Ohms) Switching Energy (µJ) Switching Energy vs Gate Resistance VDS=533V ID=28A TJ=125°C L=100µH Hard Switching ZCS ZVS 100 150 200 250 300 350 400 6 8 10 12 14 16 18 20 22 24 26 ID, Drain Current (A) Frequency (kHz) Operating Frequency vs Drain Current VDS=533V D=50% RG=2.5Ω TJ=125°C TJ=75°C TJ=25°C TJ=150°C 100 1000 0.2 0.6 1 1.4 1.8 VSD, Source to Drain Voltage (V) IDR, Reverse Drain Current (A) Source to Drain Diode Forward Voltage

APTC80A15SCTG – Rev 2 July, 2006 www.microsemi.com 7 – 7 Typical SiC Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0.2 0.4 0.6 0.8 1.2 Rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) Forward Characteristics TJ=25°C TJ=75°C TJ=125°C TJ=175°C 00 . 511 . 522 . 533 . 5 VF Forward Voltage (V) IF Forward Current (A) Reverse Characteristics TJ=25°C TJ=75°C TJ=125°C TJ=175°C 150 300 450 600 400 600 800 1000 1200 1400 1600 VR Reverse Voltage (V) IR Reverse Current (µA) Capacitance vs.Reverse Voltage 200 400 600 800 1000 1200 1 10 100 1000 V R Reverse Voltage C, Capacitance (pF) “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.