APTC80A10SCT ADPOW | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 7

Technical content

Features

/g183/g32 - Ultra low R DSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated /g183/g32Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF /g183/g32Kelvin source for easy drive /g183/g32Very low stray inductance - Symmetrical design - Lead frames for power connections /g183/g32Internal thermistor for temperature monitoring /g183/g32High level of integration Benefits /g183/g32Outstanding performance at high frequency operation /g183/g32Direct mounting to heatsink (isolated package) /g183/g32Low junction to case thermal resistance /g183/g32Solderable terminals both for power and signal fo r easy PCB mounting /g183/g32Low profile Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module

APTC80A10SCT – Rev 1 May, 2004 APT website – http://www.advancedpower.com 2 – 7 All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit BVDSS Drain - Source Breakdown Voltage V GS = 0V, ID = 750µA 800 V VGS = 0V,VDS = 800V Tj = 25°C 75 IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 800V T j = 125°C 750 µA RDS(on) Drain – Source on Resistance V GS = 10V, ID = 21A 100 m/g87 VGS(th) Gate Threshold Voltage V GS = VDS, ID = 3mA 2.1 3 3.9 V IGSS Gate – Source Leakage Current V GS = ±20 V, VDS = 0V ±175 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Ciss Input Capacitance 6761 Coss Output Capacitance 3137 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 161 pF Qg Total gate Charge 273 Qgs Gate – Source Charge 36 Qgd Gate – Drain Charge VGS = 10V VBus = 400V ID = 42A 138 nC Td(on) Turn-on Delay Time 10 Tr Rise Time 13 Td(off) Turn-off Delay Time 83 Tf Fall Time Inductive switching @ 125°C VGS = 15V VBus = 533V ID = 42A RG = 1.8/g87 35 ns Eon Turn-on Switching Energy 437 Eoff Turn-off Switching Energy /g117 Inductive switching @ 25°C VGS = 15V, VBus = 533V ID = 42A, RG = 1.8Ω 417 µJ Eon Turn-on Switching Energy 765 Eoff Turn-off Switching Energy /g117 Inductive switching @ 125°C VGS = 15V, VBus = 533V ID = 42A, RG = 1.8Ω 513 µJ /g117 In accordance with JEDEC standard JESD24-1. Series diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit IF(AV) Maximum Average Forward Current 50% duty cycle T c = 85°C 30 A IF = 30A 1.15 IF = 60A 1.05 VF Diode Forward Voltage IF = 30A T j = 125°C 1 V Tj = 25°C 24 trr Reverse Recovery Time IF = 30A VR = 133V di/dt = 200A/µs Tj = 125°C 48 ns Tj = 25°C 33 Qrr Reverse Recovery Charge IF = 30A VR = 133V di/dt = 200A/µs Tj = 125°C 150 nC

APTC80A10SCT – Rev 1 May, 2004 APT website – http://www.advancedpower.com 3 – 7 Parallel diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit IF(AV) Maximum Average Forward Current 50% duty cycle Tc = 125°C 20 A Tj = 25°C 1.6 1.8 VF Diode Forward Voltage I F = 20A Tj = 175°C 2.6 3.0 V QC Total Capacitive Charge IF = 20A, VR = 600V di/dt =1200A/µs 56 nC f = 1MHz, VR = 200V 180 Q Total Capacitance f = 1MHz, VR = 400V 132 pF Thermal and package characteristics Symbol Characteristic Min Typ Max Unit Transistor 0.3 Series diode 1.2 RthJC Junction to Case Parallel diode 0.8 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ Operating junction temperature range -40 150 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 100 Torque Mounting torque To Heatsink M5 4.7 N.m Wt Package Weight 160 g Temperature sensor NTC Symbol Characteristic Min Typ Max Unit R25 Resistance @ 25°C 68 k/g87 B 25/85 T 25 = 298.16 K 4080 K /g250 /g251 /g249 /g234 /g235 /g233 /g247/g247 /g248 /g246 /g231/g231 /g232 /g230/g45 /g61 TTB RRT 11exp Package outline T: Thermistor temperature RT: Thermistor value at T

APTC80A10SCT – Rev 1 May, 2004 APT website – http://www.advancedpower.com 4 – 7 Typical CoolMOS Performance Curve 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0.05 0.1 0.15 0.2 0.25 0.3 0.35 rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 4.5V 5.5V 6.5V 100 120 0 5 10 15 20 25 V DS, Drain to Source Voltage (V) ID, Drain Current (A) VGS=15&10V Low Voltage Output Characteristics Transfert Characteristics TJ=-55°C TJ=25°C TJ=125°C 120 150 012345678 V GS, Gate to Source Voltage (V) ID, Drain Current (A) VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle RDS(on) vs Drain Current VGS=10V VGS=20V 0.8 0.9 1.1 1.2 1.3 1.4 0 1 02 03 04 05 06 07 08 09 0 I D, Drain Current (A) RDS(on) Drain to Source ON Resistance Normalized to VGS=10V @ 21A 25 50 75 100 125 150 T C, Case Temperature (°C) ID, DC Drain Current (A) DC Drain Current vs Case Temperature

APTC80A10SCT – Rev 1 May, 2004 APT website – http://www.advancedpower.com 5 – 7 0.90 0.95 1.00 1.05 1.10 1.15 -50 0 50 100 150 T J, Junction Temperature (°C) BVDSS, Drain to Source Breakdown Voltage (Normalized) Breakdown Voltage vs Temperature ON resistance vs Temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 0 50 100 150 T J, Junction Temperature (°C) RDS(on), Drain to Source ON resistance (Normalized) VGS=10V ID= 21A Threshold Voltage vs Temperature 0.7 0.8 0.9 1.0 1.1 1.2 -50 0 50 100 150 T C, Case Temperature (°C) VGS(TH), Threshold Voltage (Normalized) Maximum Safe Operating Area 100ms 10ms 1ms 100µs 100 1000 1 10 100 1000 VDS, Drain to Source Voltage (V) ID, Drain Current (A) limited by RDSon Single pulse TJ=150°C Ciss Crss Coss 100 1000 10000 100000 0 1 02 03 04 05 0 VDS, Drain to Source Voltage (V) C, Capacitance (pF) Capacitance vs Drain to Source Voltage VDS=160V VDS=400V VDS=640V 0 50 100 150 200 250 300 Gate Charge (nC) Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) ID=42A TJ=25°C

APTC80A10SCT – Rev 1 May, 2004 APT website – http://www.advancedpower.com 6 – 7 Delay Times vs Current td(on) td(off) 100 20 30 40 50 60 70 ID, Drain Current (A) td(on) and td(off) (ns) VDS=533V RG=1.8Ω TJ=125°C L=100µH Rise and Fall times vs Current tr tf 20 30 40 50 60 70 ID, Drain Current (A) tr and tf (ns) VDS=533V RG=1.8Ω TJ=125°C L=100µH Switching Energy vs Current Eon Eoff 0.4 0.8 1.2 1.6 20 30 40 50 60 70 I D, Drain Current (A) Eon and Eoff (mJ) VDS=533V RG=1.8Ω TJ=125°C L=100µH Eon Eoff 0.5 1.5 2.5 02 . 557 . 5 1 0 1 2 . 5 1 5 Gate Resistance (Ohms) Switching Energy (mJ) Switching Energy vs Gate Resistance VDS=533V ID=42A TJ=125°C L=100µH 100 150 200 250 300 350 400 10 15 20 25 30 35 40 I D, Drain Current (A) Frequency (kHz) Operating Frequency vs Drain Current VDS=533V D=50% RG=1.8Ω TJ=125°C TJ=25°C TJ=150°C 100 1000 0.2 0.6 1 1.4 1.8 VSD, Source to Drain Voltage (V) IDR, Reverse Drain Current (A) Source to Drain Diode Forward Voltage

APTC80A10SCT – Rev 1 May, 2004 APT website – http://www.advancedpower.com 7 – 7 Typical SiC Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) Forward Characteristics TJ=25°C TJ=75°C TJ=125°C TJ=175°C 00 . 511 . 522 . 533 . 5 VF Forward Voltage (V) IF Forward Current (A) Reverse Characteristics TJ=25°C TJ=75°C TJ=125°C TJ=175°C 200 400 600 800 400 600 800 1000 1200 1400 1600 V R Reverse Voltage (V) IR Reverse Current (µA) Capacitance vs.Reverse Voltage 400 800 1200 1600 1 10 100 1000 V R Reverse Voltage C, Capacitance (pF) “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign pa tents pending. All Rights Reserved.