APTC60TAM35P

APTC60TAM35P ADPOW | Alldatasheet

Document overview

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• PDF pages: 6

Technical content

Features

• Ul tra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged
• Kelvin source for easy drive
• Very low stray inductance - Symmetrical design - Lead frames for power connections
• High level of integration Benefits
• Outstandi ng performance at hi gh frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for easy PCB mounting
• Very low (12mm) profile
• Each leg can be easily paralleled to achieve a phase leg of three times the current capability
• Module can be configured as a three phase bridge
• Module can be configured as a boost followed by a full bridge Triple phase leg Super Junction MOSFET Power Module

APTC60TAM35P – Rev 0 September, 2004 APT website – http://www.advancedpower.com 2 - 6 All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit BVDSS Drain - Source Breakdown Voltage V GS = 0V, ID = 375µA 600 V VGS = 0V,VDS = 600V Tj = 25°C 1 40 IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 600V T j = 125°C 375 µA RDS(on) Drain – Source on Resistance V GS = 10V, ID = 72A 35 mΩ VGS(th) Gate Threshold Voltage V GS = VDS, ID = 5.4mA 2.1 3 3.9 V IGS S Gate – Source Leakage Current V GS = ±20 V, VDS = 0V ±150 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cis s Input Capacitance 14 Coss Output Capacitance 5.13 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 0.42 nF Qg Total gate Charge 518 Qgs Gate – Source Charge 58 Qgd Gate – Drain Charge VGS = 10V VBus = 300V ID = 72A 222 nC Td(on) Turn-on Delay Ti me 21 Tr Rise Time 30 Td(off) Turn-off Delay Time 283 Tf Fall Time Inductive Switching @ 125°C VGS = 15V VBus = 400V ID = 72A RG = 2.5Ω 84 ns Eon Turn-on Switchi ng Energy X 1340 Eoff Turn-off Switching Energy Y Inductive switching @ 25°C VGS = 15V, VBus = 400V ID = 72A, RG = 2.5Ω 1960 µJ Eon Turn-on Switchi ng Energy X 2192 Eoff Turn-off Switching Energy Y Inductive switching @ 125°C VGS = 15V, VBus = 400V ID = 72A, RG = 2.5Ω 2412 µJ Source - Drain diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Tc = 25°C 72 IS Continuous Source current (Body diode) Tc = 80°C 54 A VSD Diode Forward Voltage V GS = 0V, IS = - 72A 1.2 V dv/dt Peak Diode Recovery Z 6 V/ns trr Reverse Recovery Time T j = 25°C 580 ns Qrr Reverse Recovery Charge IS = - 72A VR = 350V diS/dt = 200A/µs Tj = 25°C 46 µC X Eon includes diode reverse recovery. Y In accordance with JEDEC standard JESD24-1. Z dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS ≤ - 72A di/dt ≤ 200A/µs VR ≤ VDSS Tj ≤ 150°C

APTC60TAM35P – Rev 0 September, 2004 APT website – http://www.advancedpower.com 3 - 6 Thermal and package characteristics Symbol Characteristic Min Typ Max Unit RthJC Junction to Case 0.3 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ Operating junction temperature range -40 150 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 100 Torque Mounting torque To heatsink M6 3 5 N.m Wt Package Weight 250 g Package outline 5 places (3:1)

APTC60TAM35P – Rev 0 September, 2004 APT website – http://www.advancedpower.com 4 - 6 Typical Performance Curve 0.9 0.7 0.5 0.3 0.1

0.05 Single Pulse

0.05 0.1 0.15 0.2 0.25 0.3 0.35 rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 4.5V 5.5V 6.5V 120 160 200 240 280 320 360 400 0 5 10 15 20 25 V DS, Drain to Source Voltage (V) ID, Drain Current (A) VGS=15&10V Low Voltage Output Characteristics Transfert Characteristics TJ=-55°CTJ=25°C TJ=125°C 120 160 200 240 280 01234567 V GS, Gate to Source Voltage (V) ID, Drain Current (A) VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle RDS(on) vs Drain Current VGS=10V VGS=20V 0.9 0.95 1.05 1.1 0 20 40 60 80 100 120 ID, Drain Current (A) RDS(on) Drain to Source ON Resistance Normalized to VGS=10V @ 36A 25 50 75 100 125 150 TC, Case Temperature (°C) ID, DC Drain Current (A) DC Drain Current vs Case Temperature

APTC60TAM35P – Rev 0 September, 2004 APT website – http://www.advancedpower.com 5 - 6 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 T J, Junction Temperature (°C) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) ON resistance vs Temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 25 50 75 100 125 150 T J, Junction Temperature (°C) RDS(on), Drain to Source ON resistance (Normalized) VGS=10V ID= 72A Threshold Voltage vs Temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 T C, Case Temperature (°C) VGS(TH), Threshold Voltage (Normalized) Maximum Safe Operating Area DC line 10 ms 1 ms 100 µs 0.1 100 1000 1 10 100 1000 VDS, Drain to Source Voltage (V) ID, Drain Current (A) limited by RDSon Single pulse TJ=150°C Ciss Crss Coss 100 1000 10000 100000 0 1 02 03 04 05 0 VDS, Drain to Source Voltage (V) C, Capacitance (pF) Capacitance vs Drain to Source Voltage VDS=120V VDS=300V VDS=480V 0 100 200 300 400 500 600 Gate Charge (nC) VGS, Gate to Source Voltage (V) Gate Charge vs Gate to Source Voltage ID=72A TJ=25°C

APTC60TAM35P – Rev 0 September, 2004 APT website – http://www.advancedpower.com 6 - 6 TJ=25°C TJ=150°C 100 1000 VSD, Source to Drain Voltage (V) IDR, Reverse Drain Current (A) Source to Drain Diode Forward Voltage Delay Times vs Current td(on) td(off) 100 150 200 250 300 350 0 20 40 60 80 100 120 I D, Drain Current (A) td(on) and td(off) (ns) VDS=400V RG=2.5Ω TJ=125°C L=100µH Rise and Fall times vs Current tr tf 100 120 0 2 04 06 08 0 1 0 0 1 2 0 I D, Drain Current (A) tr and tf (ns) VDS=400V RG=2.5Ω TJ=125°C L=100µH Switching Energy vs Current Eon Eoff 0.5 1.5 2.5 3.5 4.5 0 2 04 06 08 0 1 0 0 1 2 0 ID, Drain Current (A) Switching Energy (mJ) VDS=400V RG=2.5Ω TJ=125°C L=100µH Eon Eoff 0 5 10 15 20 25 Gate Resistance (Ohms) Switching Energy (mJ) Switching Energy vs Gate Resistance VDS=400V ID=72A TJ=125°C L=100µH hard switching ZCS ZVS 100 120 140 15 20 25 30 35 40 45 50 55 60 65 I D, Drain Current (A) Frequency (kHz) Operating Frequency vs Drain Current VDS=400V D=50% RG=2.5Ω TJ=125°C TC=75°C “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.