APTC60DAM24CT1G MICROSEMI | Alldatasheet

Document overview

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Technical content

Features

  • Ultra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated - Very rugged
  • CR1 SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF
  • Very low stray inductance
  • Internal thermistor for temperature monitoring
  • High level of integration Benefits
  • Outstanding performance at high frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • Solderable terminals both for power and signal for easy PCB mounting
  • Low profile
  • RoHS Compliant Boost chopper Super Junction MOSFET Power Module VDSS = 600V RDSon = 24mΩ max @ Tj = 25°C ID = 95A @ Tc = 25°C

APTC60DAM24CT1G – Rev 0 January, 2008 www.microsemi.com 2 – 7 All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit VGS = 0V,VDS = 600V Tj = 25°C 350 IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 600V Tj = 125°C 600 µA RDS(on) Drain – Source on Resistance VGS = 10V, ID = 47.5A 24 mΩ VGS(th) Gate Threshold Voltage V GS = VDS, ID = 5mA 2.1 3 3.9 V IGSS Gate – Source Leakage Current V GS = ±20 V, VDS = 0V 200 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Ciss Input Capacitance 14.4 Coss Output Capacitance VGS = 0V ; VDS = 25V f = 1MHz 17 nF Qg Total gate Charge 300 Qgs Gate – Source Charge 68 Qgd Gate – Drain Charge VGS = 10V VBus = 300V ID = 95A 102 nC Td(on) Turn-on Delay Time 21 Tr Rise Time 30 Td(off) Turn-off Delay Time 100 Tf Fall Time Inductive Switching (125°C) VGS = 10V VBus = 400V ID = 95A RG = 2.5Ω 45 ns Eon Turn-on Switching Energy 810 Eoff Turn-off Switching Energy Inductive switching @ 25°C VGS = 10V ; VBus = 400V ID = 95A ; RG = 2.5Ω 1040 µJ Eon Turn-on Switching Energy 1320 Eoff Turn-off Switching Energy Inductive switching @ 125°C VGS = 10V ; VBus = 400V ID = 95A ; RG = 2.5Ω 1270 µJ CR1 SiC diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 600 V Tj = 25°C 200 800 IRM Maximum Reverse Leakage Current V R=600V Tj = 175°C 400 4000 µA IF DC Forward Current Tc = 100°C 40 A Tj = 25°C 1.6 1.8 VF Diode Forward Voltage I F = 40A Tj = 175°C 2.0 2.4 V QC Total Capacitive Charge IF = 40A, VR = 300V di/dt =1200A/µs 56 nC f = 1MHz, VR = 200V 260 C Total Capacitance f = 1MHz, VR = 400V 200 pF

APTC60DAM24CT1G – Rev 0 January, 2008 www.microsemi.com 3 – 7 Thermal and package characteristics Symbol Characteristic Min Typ Max Unit Transistor 0.27 RthJC Junction to Case Thermal Resistance SiC Diode 0.8 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ Operating junction temperature range -40 150 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 100 Torque Mounting torque To heatsink M4 2.5 4.7 N.m Wt Package Weight 80 g Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information). Symbol Characteristic Min Typ Max Unit R25 Resistance @ 25°C 50 kΩ ∆R25/R25 5 % B25/85 T 25 = 298.15 K 3952 K ∆B/B T C=100°C 4 % ⎛ − TTB RRT 11exp See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com T: Thermistor temperature RT: Thermistor value at T

APTC60DAM24CT1G – Rev 0 January, 2008 www.microsemi.com 4 – 7 Typical CoolMOS Performance Curve 0.9 0.7 0.5 0.3 0.1

0.05 Single Pulse

0.05 0.1 0.15 0.2 0.25 0.3 rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 4.5V 5.5V 6.5V 160 240 320 400 480 560 640 720 0 5 10 15 20 25 V DS, Drain to Source Voltage (V) ID, Drain Current (A) VGS=15&10V Low Voltage Output Characteristics Transfert Characteristics TJ=25°C TJ=125°C 120 160 200 240 280 01234567 VGS, Gate to Source Voltage (V) ID, Drain Current (A) VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle RDS(on) vs Drain Current VGS=10V VGS=20V 0.9 0.95 1.05 1.1 1.15 1.2 1.25 1.3 0 40 80 120 160 200 240 280 ID, Drain Current (A) RDS(on) Drain to Source ON Resistance Normalized to VGS=10V @ 95A 100 25 50 75 100 125 150 TC, Case Temperature (°C) ID, DC Drain Current (A) DC Drain Current vs Case Temperature

APTC60DAM24CT1G – Rev 0 January, 2008 www.microsemi.com 5 – 7 0.8 0.9 1.0 1.1 1.2 25 50 75 100 125 150 T J, Junction Temperature (°C) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) ON resistance vs Temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 25 50 75 100 125 150 T J, Junction Temperature (°C) RDS(on), Drain to Source ON resistance (Normalized) VGS=10V ID= 95A Threshold Voltage vs Temperature 0.6 0.7 0.8 0.9 1.0 1.1 25 50 75 100 125 150 TC, Case Temperature (°C) VGS(TH), Threshold Voltage (Normalized) Maximum Safe Operating Area 10 ms 1 ms 100 µs 100 1000 1 10 100 1000 VDS, Drain to Source Voltage (V) ID, Drain Current (A) limited by RDSon Single pulse TJ=150°C TC=25°C Ciss Crss Coss 100 1000 10000 100000 1000000 0 1 02 03 04 05 0 VDS, Drain to Source Voltage (V) C, Capacitance (pF) Capacitance vs Drain to Source Voltage VDS=120V VDS=300V VDS=480V 0 40 80 120 160 200 240 280 320 Gate Charge (nC) VGS, Gate to Source Voltage (V) Gate Charge vs Gate to Source Voltage ID=95A TJ=25°C

APTC60DAM24CT1G – Rev 0 January, 2008 www.microsemi.com 6 – 7 TJ=25°C TJ=150°C 100 1000 VSD, Source to Drain Voltage (V) IDR, Reverse Drain Current (A) Source to Drain Diode Forward Voltage Delay Times vs Current td(on) td(off) 100 120 140 0 20 40 60 80 100 120 140 160 ID, Drain Current (A) td(on) and td(off) (ns) VDS=400V RG=2.5Ω TJ=125°C L=100µH Rise and Fall times vs Current tr tf 0 20 40 60 80 100 120 140 160 ID, Drain Current (A) tr and tf (ns) VDS=400V RG=2.5Ω TJ=125°C L=100µH Switching Energy vs Current Eon Eoff 0.5 1.5 2.5 0 20 40 60 80 100 120 140 160 ID, Drain Current (A) Switching Energy (mJ) VDS=400V RG=2.5Ω TJ=125°C L=100µH Eon Eoff 0 5 10 15 20 25 Gate Resistance (Ohms) Switching Energy (mJ) Switching Energy vs Gate Resistance VDS=400V ID=95A TJ=125°C L=100µH hard switching ZCS ZVS 100 150 200 250 300 10 20 30 40 50 60 70 80 90 I D, Drain Current (A) Frequency (kHz) Operating Frequency vs Drain Current VDS=400V D=50% RG=2.5Ω TJ=125°C TC=75°C

APTC60DAM24CT1G – Rev 0 January, 2008 www.microsemi.com 7 – 7 Typical CR1 SiC Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) Forward Characteristics TJ=25°C TJ=75°C TJ=125°C TJ=175°C 00 . 511 . 522 . 533 . 5 VF Forward Voltage (V) IF Forward Current (A) Reverse Characteristics TJ=25°C TJ=75°C TJ=125°C TJ=175°C 100 200 300 400 500 600 700 800 200 300 400 500 600 700 800 V R Reverse Voltage (V) IR Reverse Current (µA) Capacitance vs.Reverse Voltage 200 400 600 800 1000 1200 1400 1600 1 10 100 1000 VR Reverse Voltage C, Capacitance (pF) “COOLMOS™ comprise a new family of transistors developed by In fineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.