APTC60DAM18CTG ADPOW | Alldatasheet

Document overview

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Technical content

Features

  • Ul tra low RDSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated
  • FWD SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF
  • Kelvin source for easy drive
  • Very low stray inductance - Symmetrical design - Lead frames for power connections
  • Internal thermistor for temperature monitoring
  • High level of integration Benefits
  • Outstandi ng performance at hi gh frequency operation
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • Solderable terminals both for power and signal for easy PCB mounting
  • Low profile
  • RoHS compliant Boost chopper SiC FWD diode Super Junction MOSFET Power Module

APTC60DAM18CTG – Rev 2 October, 2005 APT website – http://www.advancedpower.com 2 – 7 All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit VGS = 0V,VDS = 600V Tj = 25°C 100 IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 600V T j = 125°C 1000 µA RDS(on) Drain – Source on Resistance V GS = 10V, ID = 71.5A 18 mΩ VGS(th) Gate Threshold Voltage V GS = VDS, ID = 4mA 2.1 3 3.9 V IGS S Gate – Source Leakage Current V GS = ±20 V, VDS = 0V ±200 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cis s Input Capacitance 28 Coss Output Capacitance 10.2 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 0.85 nF Qg Total gate Charge 1036 Qgs Gate – Source Charge 116 Qgd Gate – Drain Charge VGS = 10V VBus = 300V ID = 143A 444 nC Td(on) Turn-on Delay Ti me 21 Tr Rise Time 30 Td(off) Turn-off Delay Time 283 Tf Fall Time Inductive switching @ 125°C VGS = 15V VBus = 400V ID = 143A RG = 1.2Ω 84 ns Eon Turn-on Switchi ng Energy 1608 Eoff Turn-off Switching Energy Inductive switching @ 25°C VGS = 15V, VBus = 400V ID = 143A, RG = 1.2Ω 3920 µJ Eon Turn-on Switchi ng Energy 2630 Eoff Turn-off Switching Energy Inductive switching @ 125°C VGS = 15V, VBus = 400V ID = 143A, RG = 1.2Ω 4824 µJ Chopper diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit VRRM Maximum Peak Repetitive Reverse Voltage 600 V Tj = 25°C 2 IRM Maximum Reverse Leakage Current V R=600V Tj = 175°C 10 mA IF DC Forward Current Tc = 125°C 100 A Tj = 25°C 1.6 1.8 VF Diode Forward Voltage I F = 100A Tj = 175°C 2.0 2.4 V QC Total Capacitive Charge IF = 100A, VR = 300V di/dt =2400A/µs 140 nC f = 1MHz, VR = 200V 650 C Total Capacitance f = 1MHz, VR = 400V 500 pF

APTC60DAM18CTG – Rev 2 October, 2005 APT website – http://www.advancedpower.com 3 – 7 Thermal and package characteristics Symbol Characteristic Min Typ Max Unit Transistor 0.15 RthJC Junction to Case Thermal Resistance Diode 0.28 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ Operating junction temperature range -40 150 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 100 Torque Mounting torque To heatsink M5 1.5 4.7 N.m Wt Package Weight 160 g Temperature sensor NTC (see application note APT0406 on www.advancedpower.com for more information). Symbol Characteristic Min Typ Max Unit R25 Resistance @ 25°C 50 kΩ B 25/85 T 25 = 298.15 K 3952 K  − TT B RRT 11exp ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS : T: Thermistor temperature RT: Thermistor value at T

APTC60DAM18CTG – Rev 2 October, 2005 APT website – http://www.advancedpower.com 4 – 7 Typical CoolMOS Performance Curve 0.9 0.7 0.5 0.3 0.1

0.05 Single Pulse

0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 4.5V 5.5V 6.5V 100 200 300 400 500 600 700 800 0 5 10 15 20 25 V DS, Drain to Source Voltage (V) ID, Drain Current (A) VGS=15&10V Low Voltage Output Characteristics Transfert Characteristics TJ=-55°CTJ=25°C TJ=125°C 180 270 360 450 540 01234567 V GS, Gate to Source Voltage (V) ID, Drain Current (A) VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle RDS(on) vs Drain Current VGS=10V VGS=20V 0.9 0.95 1.05 1.1 0 40 80 120 160 200 240 ID, Drain Current (A) RDS(on) Drain to Source ON Resistance Normalized to VGS=10V @ 71.5A 100 120 140 160 25 50 75 100 125 150 T C, Case Temperature (°C) ID, DC Drain Current (A) DC Drain Current vs Case Temperature

APTC60DAM18CTG – Rev 2 October, 2005 APT website – http://www.advancedpower.com 5 – 7 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 T J, Junction Temperature (°C) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) ON resistance vs Temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 25 50 75 100 125 150 T J, Junction Temperature (°C) RDS(on), Drain to Source ON resistance (Normalized) VGS=10V ID= 143A Threshold Voltage vs Temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 T C, Case Temperature (°C) VGS(TH), Threshold Voltage (Normalized) Maximum Safe Operating Area DC line 10 ms 1 ms 100µs 100 1000 1 10 100 1000 VDS, Drain to Source Voltage (V) ID, Drain Current (A) limited by RDSon Single pulse TJ=150°C Ciss Crss Coss 100 1000 10000 100000 0 1 02 03 04 05 0 VDS, Drain to Source Voltage (V) C, Capacitance (pF) Capacitance vs Drain to Source Voltage VDS=120V VDS=300V VDS=480V 0 200 400 600 800 1000 1200 Gate Charge (nC) VGS, Gate to Source Voltage (V) Gate Charge vs Gate to Source Voltage ID=143A TJ=25°C

APTC60DAM18CTG – Rev 2 October, 2005 APT website – http://www.advancedpower.com 6 – 7 TJ=25°C TJ=150°C 100 1000 VSD, Source to Drain Voltage (V) IDR, Reverse Drain Current (A) Source to Drain Diode Forward Voltage Delay Times vs Current td(on) td(off) 100 150 200 250 300 350 0 40 80 120 160 200 240 I D, Drain Current (A) td(on) and td(off) (ns) VDS=400V RG=1.2Ω TJ=125°C L=100µH Rise and Fall times vs Current tr tf 100 120 0 40 80 120 160 200 240 I D, Drain Current (A) tr and tf (ns) VDS=400V RG=1.2Ω TJ=125°C L=100µH Switching Energy vs Current Eon Eoff 0 40 80 120 160 200 240 I D, Drain Current (A) Switching Energy (mJ) VDS=400V RG=1.2Ω TJ=125°C L=100µH Eon Eof f 02 . 557 . 5 1 0 1 2 . 5 Gate Resistance (Ohms) Switching Energy (mJ) Switching Energy vs Gate Resistance VDS=400V ID=143A TJ=125°C L=100µH Hard switching ZCS ZVS 100 120 140 160 30 50 70 90 110 130 I D, Drain Current (A) Frequency (kHz) Operating Frequency vs Drain Current VDS=400V D=50% RG=1.2Ω TJ=125°C TC=75°C

APTC60DAM18CTG – Rev 2 October, 2005 APT website – http://www.advancedpower.com 7 – 7 Typical SiC Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3 0.1 0.05 Single Pulse 0.05 0.1 0.15 0.2 0.25 0.3 Rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) Forward Characteristics TJ=25°C TJ=75°C TJ=125°C TJ=175°C 100 150 200 00 . 511 . 522 . 533 . 5 VF Forward Voltage (V) IF Forward Current (A) Reverse Characteristics TJ=25°C TJ=75°C TJ=125°C TJ=175°C 500 1000 1500 2000 200 300 400 500 600 700 800 VR Reverse Voltage (V) IR Reverse Current (µA) Capacitance vs.Reverse Voltage 1000 2000 3000 4000 1 10 100 1000 V R Reverse Voltage C, Capacitance (pF) “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.