APTC60AM35SCT ADPOW | Alldatasheet

Document overview

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Technical content

Features

/g183/g32 - Ultra low R DSon - Low Miller capacitance - Ultra low gate charge - Avalanche energy rated /g183/g32Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF /g183/g32Kelvin source for easy drive /g183/g32Very low stray inductance - Symmetrical design - Lead frames for power connections /g183/g32Internal thermistor for temperature monitoring /g183/g32High level of integration Benefits /g183/g32Outstanding performance at high frequency operation /g183/g32Direct mounting to heatsink (isolated package) /g183/g32Low junction to case thermal resistance /g183/g32Solderable terminals both for power and signal fo r easy PCB mounting /g183/g32Low profile Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module

APTC60AM35SCT – Rev 1 May, 2004 APT website – http://www.advancedpower.com 2 – 7 All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit BVDSS Drain - Source Breakdown Voltage V GS = 0V, ID = 500µA 600 V VGS = 0V,VDS = 600V Tj = 25°C 50 IDSS Zero Gate Voltage Drain Current VGS = 0V,VDS = 600V T j = 125°C 500 µA RDS(on) Drain – Source on Resistance V GS = 10V, ID = 36A 35 m/g87 VGS(th) Gate Threshold Voltage V GS = VDS, ID = 2mA 2.1 3 3.9 V IGSS Gate – Source Leakage Current V GS = ±20 V, VDS = 0V ±150 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Ciss Input Capacitance 14 Coss Output Capacitance 5.13 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1MHz 0.42 nF Qg Total gate Charge 518 Qgs Gate – Source Charge 58 Qgd Gate – Drain Charge VGS = 10V VBus = 300V ID = 72A 222 nC Td(on) Turn-on Delay Time 21 Tr Rise Time 30 Td(off) Turn-off Delay Time 283 Tf Fall Time Inductive switching @ 125°C VGS = 15V VBus = 400V ID = 72A RG = 2.5/g87 84 ns Eon Turn-on Switching Energy 804 Eoff Turn-off Switching Energy /g117 Inductive switching @ 25°C VGS = 15V, VBus = 400V ID = 72A, RG = 2.5Ω 1960 µJ Eon Turn-on Switching Energy 1315 Eoff Turn-off Switching Energy /g117 Inductive switching @ 125°C VGS = 15V, VBus = 400V ID = 72A, RG = 2.5Ω 2412 µJ /g117 In accordance with JEDEC standard JESD24-1. Series diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit IF(AV) Maximum Average Forward Current 50% duty cycle T c = 85°C 60 A IF = 60A 1.1 1.15 IF = 120A 1.4 VF Diode Forward Voltage IF = 60A T j = 125°C 0.9 V Tj = 25°C 24 trr Reverse Recovery Time IF = 60A VR = 133V di/dt = 400A/µs Tj = 125°C 48 ns Tj = 25°C 66 Qrr Reverse Recovery Charge IF = 60A VR = 133V di/dt = 400A/µs Tj = 125°C 300 nC

APTC60AM35SCT – Rev 1 May, 2004 APT website – http://www.advancedpower.com 3 – 7 Parallel diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit IF(AV) Maximum Average Forward Current 50% duty cycle Tc = 125°C 40 A Tj = 25°C 1.6 1.8 VF Diode Forward Voltage I F = 40A Tj = 175°C 2.0 2.4 V QC Total Capacitive Charge IF = 40A, VR = 300V di/dt =1200A/µs 56 nC f = 1MHz, VR = 200V 260 Q Total Capacitance f = 1MHz, VR = 400V 200 pF Thermal and package characteristics Symbol Characteristic Min Typ Max Unit Transistor 0.3 Series diode 0.65 RthJC Junction to Case Parallel diode 0.8 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ Operating junction temperature range -40 150 TSTG Storage Temperature Range -40 125 TC Operating Case Temperature -40 100 Torque Mounting torque To Heatsink M5 4.7 N.m Wt Package Weight 160 g Temperature sensor NTC Symbol Characteristic Min Typ Max Unit R25 Resistance @ 25°C 68 k/g87 B 25/85 T 25 = 298.16 K 4080 K /g250 /g251 /g249 /g234 /g235 /g233 /g247/g247 /g248 /g246 /g231/g231 /g232 /g230/g45 /g61 TTB RRT 11exp Package outline T: Thermistor temperature RT: Thermistor value at T

APTC60AM35SCT – Rev 1 May, 2004 APT website – http://www.advancedpower.com 4 – 7 Typical CoolMOS Performance Curve 0.9 0.7 0.5 0.3 0.1

0.05 Single Pulse

0.05 0.1 0.15 0.2 0.25 0.3 0.35 rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 4.5V 5.5V 6.5V 120 160 200 240 280 320 360 400 0 5 10 15 20 25 V DS, Drain to Source Voltage (V) ID, Drain Current (A) VGS=15&10V Low Voltage Output Characteristics Transfert Characteristics TJ=-55°CTJ=25°C TJ=125°C 120 160 200 240 280 01234567 V GS, Gate to Source Voltage (V) ID, Drain Current (A) VDS > ID(on)xRDS(on)MAX 250µs pulse test @ < 0.5 duty cycle RDS(on) vs Drain Current VGS=10V VGS=20V 0.9 0.95 1.05 1.1 0 2 04 06 08 0 1 0 0 1 2 0 ID, Drain Current (A) RDS(on) Drain to Source ON Resistance Normalized to VGS=10V @ 36A 25 50 75 100 125 150 T C, Case Temperature (°C) ID, DC Drain Current (A) DC Drain Current vs Case Temperature

APTC60AM35SCT – Rev 1 May, 2004 APT website – http://www.advancedpower.com 5 – 7 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 T J, Junction Temperature (°C) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) ON resistance vs Temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -50 -25 0 25 50 75 100 125 150 T J, Junction Temperature (°C) RDS(on), Drain to Source ON resistance (Normalized) VGS=10V ID= 72A Threshold Voltage vs Temperature 0.6 0.7 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 T C, Case Temperature (°C) VGS(TH), Threshold Voltage (Normalized) Maximum Safe Operating Area DC line 10 ms 1 ms 100 µs 0.1 100 1000 11 0 1 0 0 1 0 0 0 VDS, Drain to Source Voltage (V) ID, Drain Current (A) limited by RDSon Single pulse TJ=150°C Ciss Crss Coss 100 1000 10000 100000 0 1 02 03 04 05 0 VDS, Drain to Source Voltage (V) C, Capacitance (pF) Capacitance vs Drain to Source Voltage VDS=120V VDS=300V VDS=480V 0 100 200 300 400 500 600 Gate Charge (nC) VGS, Gate to Source Voltage (V) Gate Charge vs Gate to Source Voltage ID=72A TJ=25°C

APTC60AM35SCT – Rev 1 May, 2004 APT website – http://www.advancedpower.com 6 – 7 TJ=25°C TJ=150°C 100 1000 VSD, Source to Drain Voltage (V) IDR, Reverse Drain Current (A) Source to Drain Diode Forward Voltage Delay Times vs Current td(on) td(off) 100 150 200 250 300 350 0 2 04 06 08 0 1 0 0 1 2 0 ID, Drain Current (A) td(on) and td(off) (ns) VDS=400V RG=2.5Ω TJ=125°C L=100µH Rise and Fall times vs Current tr tf 100 120 0 2 04 06 08 0 1 0 0 1 2 0 I D, Drain Current (A) tr and tf (ns) VDS=400V RG=2.5Ω TJ=125°C L=100µH Switching Energy vs Current Eon Eoff 0.5 1.5 2.5 3.5 4.5 0 2 04 06 08 0 1 0 0 1 2 0 ID, Drain Current (A) Switching Energy (mJ) VDS=400V RG=2.5Ω TJ=125°C L=100µH Eon Eoff 0 5 10 15 20 25 Gate Resistance (Ohms) Switching Energy (mJ) Switching Energy vs Gate Resistance VDS=400V ID=72A TJ=125°C L=100µH 100 120 140 15 20 25 30 35 40 45 50 55 60 65 I D, Drain Current (A) Frequency (kHz) Operating Frequency vs Drain Current VDS=400V D=50% RG=2.5Ω TJ=125°C

APTC60AM35SCT – Rev 1 May, 2004 APT website – http://www.advancedpower.com 7 – 7 Typical SiC Diode Performance Curve Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3 0.1 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) Forward Characteristics TJ=25°C TJ=75°C TJ=125°C TJ=175°C 00 . 511 . 522 . 533 . 5 VF Forward Voltage (V) IF Forward Current (A) Reverse Characteristics TJ=25°C TJ=75°C TJ=125°C TJ=175°C 100 200 300 400 500 600 700 800 200 300 400 500 600 700 800 V R Reverse Voltage (V) IR Reverse Current (µA) Capacitance vs.Reverse Voltage 200 400 600 800 1000 1200 1400 1600 1 10 100 1000 VR Reverse Voltage C, Capacitance (pF) “COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. “COOLMOS” is a trademark of Infineon Technologies AG”. APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign pa tents pending. All Rights Reserved.