APT97N65B2C6 MICROSEMI | Alldatasheet
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Technical content
MAXIMUM RATINGS All Ratings per die: TC = 25°C unless otherwise specifi ed.
- Ultra Low RDS(ON)
- Low Miller Capacitance
- Ultra Low Gate Charge, Q g
- Avalanche Energy Rated
- Extreme dv/dt Rated Super Junction MOSFET C Power Semiconductors OO LMOS "COOLMOS™ comprise a new family of transistors developed by In fi neon Technologies AG. "COOLMOS" is a trade- mark of Infi neon Technologies AG." G D S Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation. Microsemi Website - http://www.microsemi.com APT97N65B2C6 APT97N65LC6 650V 97A 0.041 Ω Symbol Parameter APT97N65B2_LC6 UNIT VDSS Drain-Source Voltage 650 Volts ID Continuous Drain Current @ TC = 25°C 1 (assuming Rdson max = 0.041Ω) 97 AmpsContinuous Drain Current @ TC = 100°C 62 IDM Pulsed Drain Current 2 291 VGS Gate-Source Voltage Continuous ±20 Volts PD Total Power Dissipation @ TC = 25°C 862 Watts TJ,TSTG Operating and Storage Junction Temperature Range -55 - to 150 TL Lead Temperature: 0.063" from Case for 10 Sec. 260 IAR Avalanche Current 2 13.4 Amps EAR Repetitive Avalanche Energy 3 ( Id = 13.4A, Vdd = 50V ) 2.96 EAS Single Pulse Avalanche Energy ( Id = 13.4A, Vdd = 50V ) 1954 mJ Symbol Characteristic / Test Conditions MIN TYP MAX UNIT BV(DSS) Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA) 650 Volts RDS(on) Drain-Source On-State Resistance 4 (VGS = 10V, ID = 48.5A) 0.037 0.041 Ohms IDSS Zero Gate Voltage Drain Current (VDS = 650V, VGS = 0V) 25 μA Zero Gate Voltage Drain Current (VDS = 650V, VGS = 0V, TC = 150°C) 250 IGSS Gate-Source Leakage Current (VGS = ±20V, VDS = 0V) ±100 nA VGS(th) Gate Threshold Voltage (VDS = VGS, ID = 2.96mA) 2.5 3 3.5 Volts STATIC ELECTRICAL CHARACTERISTICS CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. 050-7212 Rev A 2-2011 TO-264 T-Max® APT97N65B2C6 APT97N65LC6
APT97N65B2_LC6 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 10-5 10-4 10-3 10-2 0.1 1 10 ZθJC, THERMAL IMPEDANCE (°C/W) 0.3 D = 0.9 0.7 SINGLE PULSE RECTANGULAR PULSE DURATION (SECONDS) Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 0.5 0.1
0.05 Peak TJ = PDM x ZθJC + TC
Duty Factor D = t1/t2 PDM Note: DYNAMIC CHARACTERISTICS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS THERMAL CHARACTERISTICS Symbol Characteristic Test Conditions MIN TYP MAX UNIT Ciss Input Capacitance VGS = 0V VDS = 25V f = 1 MHz 7650 pFCoss Output Capacitance 5045 Crss Reverse Transfer Capacitance 550 Qg Total Gate Charge 5 VGS = 10V VDD = 325V ID = 97A @ 25°C 300 nCQgs Gate-Source Charge 50 Qgd Gate-Drain ("Miller") Charge 160 td(on) Turn-on Delay Time INDUCTIVE SWITCHING VGS = 15V VDD = 433V ID = 97A @ 25°C RG = 2.2Ω ns tr Rise Time 60 td(off) Turn-off Delay Time 275 tf Fall Time 130 Eon Turn-on Switching Energy 6 INDUCTIVE SWITCHING @ 25°C VDD = 433V, VGS = 15V ID = 97A, RG = 2.2Ω 2860 μJ Eoff Turn-off Switching Energy 3500 Eon Turn-on Switching Energy 6 INDUCTIVE SWITCHING @ 125°C VDD = 433V, VGS = 15V ID =97A, RG = 2.2Ω 4030 Eoff Turn-off Switching Energy 3695 Symbol Characteristic / Test Conditions MIN TYP MAX UNIT IS Continuous Source Current (Body Diode) 97 Amps ISM Pulsed Source Current 2 (Body Diode) 291 VSD Diode Forward Voltage 4 (VGS = 0V, IS = -48.5A) 0.9 1.2 Volts dv/dt Peak Diode Recovery dv/dt 7 50 V/ns trr Reverse Recovery Time (IS = -97A, di/dt = 100A/μs) Tj = 25°C 790 ns Qrr Reverse Recovery Charge (IS = -97A, di/dt = 100A/μs) Tj = 25°C 19 μC IRRM Peak Recovery Current (IS = -97A, di/dt = 100A/μs) Tj = 25°C 43 Amps Symbol Characteristic MIN TYP MAX UNIT RθJC Junction to Case 0.145 °C/W RθJA Junction to Ambient 40 1 Continuous current limited by package lead temperature.
2 Repetitive Rating: Pulse width limited by maximum junction temperature
3 Repetitive avalanche causes additional power losses that can be calculated as
PAV = EAR*f . Pulse width tp limited by Tj max. Microsemi reserves the right to change, without notice, the specifi cations and information contained herein.
4 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2%
5 See MIL-STD-750 Method 3471
6 Eon includes diode reverse recovery.