APT94N65B2C3_11 MICROSEMI | Alldatasheet

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APT94N65B2C3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. MAXIMUM RATINGS All Ratings per die: TC = 25°C unless otherwise specifi ed. CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 500μA) Drain-Source On-State Resistance 3 (VGS = 10V, ID = 47A) Zero Gate Voltage Drain Current (VDS = 650V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 650V, VGS = 0V, TC = 150°C) Gate-Source Leakage Current (VGS = ±20V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5.8mA) STATIC ELECTRICAL CHARACTERISTICS Symbol BV(DSS) RDS(on) IDSS IGSS V GS(th) UNIT Volts Ohms μA nA Volts

  • Ultra Low RDS(ON)
  • Low Miller Capacitance
  • Ultra Low Gate Charge, Q g
  • Avalanche Energy Rated
  • Extreme dv/dt Rated
  • Dual die (parallel)
  • Popular T-MAX Package Super Junction MOSFET MIN TYP MAX 650 0.03 0.035 1.0 50 100 ±200 2.1 3 3.9 C Power Semiconductors OO LMOS "COOLMOS™ comprise a new family of transistors developed by In fi neon Technologies AG. "COOLMOS" is a trade- mark of Infi neon Technologies AG." G D S Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation. Microsemi Website - http://www.microsemi.com Symbol Parameter APT94N65B2C3(G) UNIT VDSS Drain-Source Voltage 650 Volts ID Continuous Drain Current @ TC = 25°C 1 94 AmpsContinuous Drain Current @ TC = 100°C 60 IDM Pulsed Drain Current 2 282 VGS Gate-Source Voltage Continuous 20 Volts PD Total Power Dissipation @ TC = 25°C 833 Watts TJ,TSTG Operating and Storage Junction Temperature Range -55 to 150 TL Lead Temperature: 0.063" from Case for 10 Sec. 260 dv/dt Drain-Source Voltage slope (VDS = 480V, ID = 94A, TJ = 125°C) 50 V/ns IAR Avalanche Current 2 7 Amps EAR Repetitive Avalanche Energy 3 ( Id = 3.5A, Vdd = 50V ) 1 mJ EAS Single Pulse Avalanche Energy ( Id = 3.5A, Vdd = 50V ) 1800

DYNAMIC CHARACTERISTICS APT94N65B2C3(G) SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS THERMAL CHARACTERISTICS Symbol RθJC RθJA MIN TYP MAX 0.15 UNIT °C/W Characteristic Junction to Case Junction to Ambient Microsemi reserves the right to change, without notice, the specifi cations and information contained herein. Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 4 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 300V ID = 94A @ 25°C INDUCTIVE SWITCHING VGS = 15V VDD = 400V ID = 94A @ 25°C RG = 4.3Ω INDUCTIVE SWITCHING @ 25°C VDD = 400V, VGS = 15V ID = 94A, RG = 4.3Ω INDUCTIVE SWITCHING @ 125°C VDD = 400V, VGS = 15V ID = 94A, RG = 4.3Ω 1 Repetitive Rating: Pulse width limited by maximum junction temperature.

2 Repetitive avalanche causes additional power losses that can be calcula-

AV = EAR*f . Pulse width tp limited by Tj max.

3 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2%

4 See MIL-STD-750 Method 3471

5 Eon includes diode reverse recovery.

6 Maximum 125°C diode commutation speed = di/dt 600A/ μs

μJ 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 10-5 10-4 10-3 10-2 0.1 ZθJC, THERMAL IMPEDANCE (°C/W) 0.3 D = 0.9 0.7 SINGLE PULSE RECTANGULAR PULSE DURATION (SECONDS) Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 0.5 0.1

0.05 Peak TJ = PDM x ZθJC + TC

Duty Factor D = t1/t2 PDM Note: Symbol Characteristic / Test Conditions MIN TYP MAX UNIT IS Continuous Source Current (Body Diode) 94 Amps ISM Pulsed Source Current 2 (Body Diode) 282 VSD Diode Forward Voltage 4 (VGS = 0V, IS = -94A) 0.9 1.2 Volts trr Reverse Recovery Time (IS = -94A, di/dt = 100A/μs) Tj = 25°C 960 ns 1271 Qrr Reverse Recovery Charge (IS = -94A, di/dt = 100A/μs) Tj = 25°C 31 μC IRRM Peak Recovery Current (IS = -94A, di/dt = 100A/μs) Tj = 25°C 58 Amps