APT94N65B2C3 MICROSEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

APT94N65B2C3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. MAXIMUM RATINGS All Ratings per die: TC = 25°C unless otherwise specifi ed. CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 500μA) Drain-Source On-State Resistance 3 (VGS = 10V, ID = 60A) Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TC = 150°C) Gate-Source Leakage Current (VGS = ±20V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5.8mA) Symbol VDSS ID IDM VGS PD TJ,TSTG TL dv/dt IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Total Power Dissipation @ TC = 25°C Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Drain-Source Voltage slope (VDS = 480V, ID = 94A, TJ = 125°C) Avalanche Current 2 Repetitive Avalanche Energy 2 ( Id = 7A, Vdd = 50V ) Single Pulse Avalanche Energy ( Id = 3.5A, Vdd = 50V ) UNIT Volts Amps Volts Watts V/ns Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol BV(DSS) RDS(on) IDSS IGSS V GS(th) UNIT Volts Ohms μA nA Volts APT94N65B2C3S(G) 650 282 415 -55 to 150 260 1800

  • Ultra Low RDS(ON)
  • Low Miller Capacitance
  • Ultra Low Gate Charge, Q g
  • Avalanche Energy Rated
  • Extreme dv/dt Rated
  • Dual die (parallel)
  • Popular T-MAX Package Super Junction MOSFET MIN TYP MAX 650 0.03 0.035 1.0 50 100 ±200 2.1 3 3.9 C Power Semiconductors OO LMOS "COOLMOS™ comprise a new family of transistors developed by In fi neon Technologies AG. "COOLMOS" is a trade- mark of Infi neon Technologies AG." G D S Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation. Microsemi Website - http://www.microsemi.com

DYNAMIC CHARACTERISTICS APT94N65B2C3(G) SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS THERMAL CHARACTERISTICS Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current 1 (Body Diode) Diode Forward Voltage 3 (VGS = 0V, IS = -94A) Peak Diode Recovery dv/dt Reverse Recovery Time (IS = -94A, di/dt = 100A/μs) Reverse Recovery Charge (IS = -94A, di/dt = 100A/μs) Peak Recovery Current (IS = -94A, di/dt = 100A/μs) Symbol IS ISM VSD dv/dt trr Qrr IRRM UNIT Amps Volts V/ns ns μC Amps MIN TYP MAX 141 0.9 1.2 960 1271 Symbol RθJC RθJA MIN TYP MAX 0.15 UNIT °C/W Characteristic Junction to Case Junction to Ambient

1 Repetitive Rating: Pulse width limited by maximum junction

2 Repetitive avalanche causes additional power losses that can

AV = EAR*f . Pulse width tp limited by Tj max.

3 Pulse Test: Pulse width < 380 μs, Duty Cycle < 2%

Microsemi reserves the right to change, without notice, the specifi cations and information contained herein. Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 4 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 300V ID = 94A @ 25°C INDUCTIVE SWITCHING VGS = 15V VDD = 400V ID = 94A @ 25°C RG = 4.3Ω INDUCTIVE SWITCHING @ 25°C VDD = 400V, VGS = 15V ID = 94A, RG = 4.3Ω INDUCTIVE SWITCHING @ 125°C VDD = 400V, VGS = 15V ID = 94A, RG = 4.3Ω

4 See MIL-STD-750 Method 3471

5 Eon includes diode reverse recovery.

6 Maximum 125°C diode commutation speed = di/dt 600A/ μs

μJ 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0.16 10-5 10-4 10-3 10-2 0.1 ZθJC, THERMAL IMPEDANCE (°C/W) 0.3 D = 0.9 0.7 SINGLE PULSE RECTANGULAR PULSE DURATION (SECONDS) Figure 1, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration 0.5 0.1

0.05 Peak TJ = PDM x ZθJC + TC

Duty Factor D = t1/t2 PDM Note: