APT94N60L2C3

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Technical content

G D S Super Junction MOSFET C Power Semiconductors OO LMOS

• Ultra low RDS(ON)
• Low Miller Capacitance
• Ultra Low Gate Charge, Qg
• Avalanche Energy Rated
• TO-264 Max Package APT94N60L2C3 600V 94A 0.035ΩΩΩΩΩ "COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade- mark of Infineon Technologies AG" MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 500µA) Drain-Source On-State Resistance 2 (VGS = 10V, 60A) Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TJ = 150°C) Gate-Source Leakage Current (VGS = ±20V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 5.4mA) Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL dv/dt IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Drain-Source Voltage slope (V DS = 480V, ID = 94A, TJ = 125°C) Repetitive Avalanche Current 7 Repetitive Avalanche Energy 7 Single Pulse Avalanche Energy 4 UNIT Volts Amps Volts Watts W/°C V/ns Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) UNIT Volts Ohms µA nA Volts MIN TYP MAX 600 0.03 0.035 1.0 50 500 ±200 2.10 3 3.9 APT94N60L2C3 600 282 ±20 ±30 833 6.67 -55 to 150 300 1800

DYNAMIC CHARACTERISTICS APT94N60L2C3 050-7148 Rev C 6-2004 Note: Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC PDM SINGLE PULSE ZθJC, THERMAL IMPEDANCE (°C/W) 10-5 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0.5 0.1 0.3 0.7 0.9 0.05 UNIT Amps Volts ns µC V/ns MIN TYP MAX 282 1 1.2 861 Symbol RθJC RθJA MIN TYP MAX 0.15 UNIT °C/W Characteristic Junction to Case Junction to Ambient Symbol IS ISM VSD t rr Q rr dv/dt Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy 6 Turn-off Switching Energy Turn-on Switching Energy 6 Turn-off Switching Energy Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 300V ID = 94A @ 25°C RESISTIVE SWITCHING VGS = 13V VDD = 380V ID = 94A @ 125°C RG = 0.9Ω INDUCTIVE SWITCHING @ 25°C VDD = 400V, VGS = 15V ID = 94A, RG = 5Ω INDUCTIVE SWITCHING @ 125°C VDD = 400V VGS = 15V ID = 94A, RG = 5Ω MIN TYP MAX 13600 4400 290 505 640 240 110 165 81 2 2040 3515 2920 3970 UNIT pF nC ns µJ SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS THERMAL CHARACTERISTICS

1 Repetitive Rating: Pulse width limited by maximum junction

2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%

3 See MIL-STD-750 Method 3471

4 Starting T j = +25°C, L = 36.0mH, RG = 25Ω, Peak IL = 10A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID94A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20.

7 Repetitve avalanche causes additional power losses that can be

AV=EAR*f APT Reserves the right to change, without notice, the specifications and information contained herein. Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current 1 (Body Diode) Diode Forward Voltage 2 (VGS = 0V, IS = -94A) Reverse Recovery Time (IS = -94A, dlS/dt = 100A/µs, VR = 350V) Reverse Recovery Charge (IS = -94A, dlS/dt = 100A/µs, VR = 350V) Peak Diode Recovery dv/dt 5