APT80F60J MICROSEMI | Alldatasheet
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ISOTOP® file # E145592 "UL Recognized" G S S D N-Channel FREDFET Absolute Maximum Ratings Thermal and Mechanical Characteristics G D S Single die FREDFET Unit A V mJ A Unit W °C/W V oz g in·lbf N·m Ratings 447 ±30 3352 Min Typ Max 961 0.13 0.15 -55 150 2500 1.03 29.2 1.1 Parameter Continuous Drain Current @ T C = 25°C Continuous Drain Current @ TC = 100°C Pulsed Drain Current 1 Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive Characteristic Total Power Dissipation @ TC = 25°C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range RMS Voltage (50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) Package Weight Terminals and Mounting Screws. Symbol ID IDM VGS EAS IAR Symbol PD RθJC RθCS TJ,TSTG VIsolation WT Torque TYPICAL APPLICATIONS PFC and other boost converter Buck converter Two switch forward (asymmetrical bridge) Single switch forward Flyback Inverters
FEATURES
Fast switching with low EMI/RFI Low R DS(on) Ultra low C rss for improved noise immunity Low gate charge Avalanche energy rated RoHS compliant APT80F60J 600V, 84A, 0.055Ω Max, trr ≤ 370ns APT80F60J Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low C rss "Miller" capaci- tance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in fl yback, boost, forward, and other circuits is enhanced by the high avalanche energy capability. Microsemi Website - http://www.microsemi.com 050-8175 Rev B 5-2009
Static Characteristics T J = 25°C unless otherwise specifi ed Dynamic Characteristics T J = 25°C unless otherwise specifi ed Source-Drain Diode Characteristics 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25°C, L = 2.08mH, RG = 2.2Ω, IAS = 60A. 3 Pulse test: Pulse Width < 380µs, duty cycle < 2%. 4 Co(cr) is defi ned as a fi xed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 C o(er) is defi ned as a fi xed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(cr) for any value of V DS less than V(BR)DSS, use this equation: Co(er) = -3.14E-7/VDS^2 + 7.31E-8/VDS + 2.09E-10. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifi cations and information contained herein. G D S Unit V V/°C Ω V mV/°C µA nA Unit S pF nC ns Unit A V ns µC A V/ns Min Typ Max 600 0.60 0.042 0.055 2.5 4 5 -10 250 1000 ±100 Min Typ Max 117 23994 245 2201 1170 606 598 128 251 134 156 408 123 Min Typ Max 447 0.8 370 690 2.6 7.0 14.5 Test Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 250µA VGS = 10V, ID = 60A VGS = VDS, ID = 2.5mA V DS = 600V T J = 25°C V GS = 0V T J = 125°C VGS = ±30V Test Conditions VDS = 50V, ID = 60A VGS = 0V, VDS = 25V f = 1MHz VGS = 0V, VDS = 0V to 400V VGS = 0 to 10V, ID = 60A, VDS = 300V Resistive Switching VDD = 400V, ID = 60A RG = 2.2Ω 6 , VGG = 15V Test Conditions MOSFET symbol showing the integral reverse p-n junction diode (body diode) I SD = 60A, TJ = 25°C, VGS = 0V T J = 25°C T J = 125°C ISD = 60A 3 T J = 25°C V DD = 100V T J = 125°C di SD/dt = 100A/µs T J = 25°C T J = 125°C ISD ≤ 60A, di/dt ≤1000A/µs, VDD = 400V, TJ = 125°C Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coeffi cient Drain-Source On Resistance 3 Gate-Source Threshold Voltage Threshold Voltage Temperature Coeffi cient Zero Gate Voltage Drain Current Gate-Source Leakage Current Parameter Forward Transconductance Input Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance, Charge Related Effective Output Capacitance, Energy Related Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Peak Recovery dv/dt Symbol VBR(DSS) ΔVBR(DSS)/ΔTJ RDS(on) VGS(th) ΔVGS(th)/ΔTJ IDSS IGSS Symbol gfs Ciss Crss Coss Co(cr) Co(er) Qg Qgs Qgd td(on) tr td(off) tf Symbol IS ISM VSD trr Qrr Irrm dv/dt 050-8175 Rev B 5-2009 APT80M60J