APT8065BVFR_05 ADPOW | Alldatasheet

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POWER MOS V® FREDFET G D S Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.]) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 1.0mA) 050-5594 Rev B 1-2005 MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ T C = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 UNIT Volts Amps Volts Watts W/°C Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS ID(on) RDS(on) IDSS IGSS VGS(th) UNIT Volts Amps Ohms µA nA Volts MIN TYP MAX 800 0.65 250 1000 ±100 APT8065BVFR 800 ±30 ±40 280 2.24 -55 to 150 300 1210 APT8065BVFR 800V 13A 0.650 ΩΩΩΩΩ TO-247Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V ® also achieves faster switching speeds through optimized gate layout.

  • Fast Recovery Body Diode • 100% Avalanche Tested
  • Lower Leakage • Popular TO-247 Package
  • Faster Switching FREDFET CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com

ZθJC, THERMAL IMPEDANCE (°C/W) 10-5 10-4 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 0.5 0.1 0.05 0.01 0.005 0.001 Note: Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC PDM 0.1 SINGLE PULSE 0.02 0.05 0.2 D=0.5 0.01 DYNAMIC CHARACTERISTICS APT8065BVFR 050-5594 Rev B 1-2005 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current 1 (Body Diode) Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.]) Peak Diode Recovery dv/dt 5 Reverse Recovery Time (IS = -ID [Cont.], di/dt = 100A/µs) Reverse Recovery Charge (IS = -ID [Cont.], di/dt = 100A/µs) Peak Recovery Current (IS = -ID [Cont.], di/dt = 100A/µs) Symbol IS ISM VSD dv/dt trr Qrr IRRM UNIT Amps Volts V/ns ns µC Amps Symbol Ciss Coss Crss Qg Qgs Qgd td(on) t r td(off) tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Test Conditions V GS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C VGS = 15V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C RG = 1.6Ω MIN TYP MAX 3050 3700 300 420 150 225 150 225 17 25 70 105 12 24 11 22 60 90 12 24 UNIT pF nC ns MIN TYP MAX 1.3 Tj = 25°C 200 Tj = 125°C 350 Tj = 25°C 0.7 Tj = 125°C 1.8 Tj = 25°C 11 Tj = 125°C 17

1 Repetitive Rating: Pulse width limited by maximum junction 3 See MIL-STD-750 Method 3471

temperature. 4 Starting Tj = +25°C, L = 14.32mH, RG = 25Ω, Peak IL = 13A 2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2% 5 IS - -ID [Cont.], di/dt = 100A/µs, VDD - VDSS, Tj - 150°C, RG = 2.0Ω, VR = 200V. APT Reserves the right to change, without notice, the specifications and information contained herein. THERMAL CHARACTERISTICS Symbol RθJC RθJA MIN TYP MAX 0.45 UNIT °C/W Characteristic Junction to Case Junction to Ambient