APT8058HVR ADPOW | Alldatasheet

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Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.]) Zero Gate Voltage Drain Current (VDS = VDSS , VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS , VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS , ID = 1.0mA) 050-5815 Rev A MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ T C = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ T C = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 UNIT Volts Amps Volts Watts W/°C Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol BV DSS ID(on) R DS(on) IDSS IGSS VGS(th) UNIT Volts Amps Ohms µA nA Volts MIN TYP MAX 800 13.5 0.580 250 ±100 APT8058HVR 800 13.5 ±30 ±40 250 2.0 -55 to 150 300 13.5 1300 APT8058HVR 800V 13.5A 0.580 Ω G D S CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 EUROPE Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 APT Website - http://www.advancedpower.com Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

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td(on) tr td(off) tf Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID[Cont.] @ 25°C VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25°C R G = 1.6Ω MIN TYP MAX 3700 4440 370 515 180 270 185 275 16 24 90 135 12 24 10 20 50 75 10 20 UNIT pF nC ns APT8058HVR Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time 050-5815 Rev A Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current 1 (Body Diode) Diode Forward Voltage 2 (VGS = 0V, IS = -ID[Cont.]) Reverse Recovery Time (IS = -ID[Cont.], dlS /dt = 100A/µs) Reverse Recovery Charge (IS = -ID[Cont.], dlS /dt = 100A/µs) SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS UNIT Amps Volts ns µC MIN TYP MAX 13.5 1.3 750

1 Repetitive Rating: Pulse width limited by maximum junction3 See MIL-STD-750 Method 3471

temperature. 4 Starting Tj = +25°C, L = 14.27mH, RG = 25Ω , Peak IL = 13.5A

2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein. THERMAL CHARACTERISTICS Symbol R θJC R θJA MIN TYP MAX 0.50 UNIT °C/W Characteristic Junction to Case Junction to Ambient 0.5 0.1 0.05 0.01 0.005 0.001 ZθJC, THERMAL IMPEDANCE ( °C/W) 10-5 10-4 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION Note: Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC PDM 0.1 SINGLE PULSE 0.02 0.05 0.2 D=0.5 0.01

VDS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE Q g, TOTAL GATE CHARGE (nC) V SD , SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGEVGS , GATE-TO-SOURCE VOLTAGE (VOLTS) I D , DRAIN CURRENT (AMPERES) IDR , REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF) APT8058HVR 050-5815 Rev A 1 5 10 50 100 800 .01 .1 1 10 50 TC =+25°C TJ =+150°C SINGLE PULSE 0.5 0.1 OPERATION HERE LIMITED BY RDS (ON) TJ =+150°C TJ =+25°C C rss C oss C iss 15,000 10,000 5,000 1,000 500 100 100 VDS =100V VDS =400V ID = ID [Cont.] 10µS 1mS 10mS 100mS DC 100µS VDS =250V APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 5.08 (.200) BSC 1.14 (.045) 0.88 (.035) 17.65 (.695) 17.39 (.685) 4.19 (.165) 3.94 (.155) Drain Source Gate 1.65 (.065) 1.39 (.055) Dia. Typ.

3 Leads

17.96 (.707) 17.70 (.697) 19.05 (0.750) 12.70 (0.500) 21.21 (.835) 20.70 (.815) 8.89 (.350) 8.63 (.340) Dimensions in Millimeters and (Inches) 3.56 (.140) BSC 6.86 (.270) 6.09 (.240) 13.84 (.545) 13.58 (.535)