APT8024B2FLLG

APT8024B2FLLG MICROSEMI | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 5

Technical content

MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. T-MAX™ G D S TO-264 B2FLL LFLL APT8024B2FLL APT8024LFLL 800V 31A 0.260ΩΩΩΩΩ

• Lower Input Capacitance • Increased Power Dissipation
• Lower Miller Capacitance • Easier To Drive
• Lower Gate Charge, Qg • Popular T-MAX™ or TO-264 Package
• FAST RECOVERY BODY DIODE Power MOS 7 ® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS(ON) and Qg. Power MOS 7 ® combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. POWER MOS 7 R FREDFET Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) Drain-Source On-State Resistance 2 (VGS = 10V, ID = 15.5A) Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V) Zero Gate Voltage Drain Current (VDS = 640V, VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 2.5mA) Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ T C = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 UNIT Volts Amps Volts Watts W/°C Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol BVDSS RDS(on) IDSS IGSS VGS(th) UNIT Volts Ohms µA nA Volts MIN TYP MAX 800 0.260 250 1000 ±100 APT8024B2_LFLL 800 124 ±30 ±40 565 4.52 -55 to 150 300 2500 Microsemi Website - http://www.microsemi.com

DYNAMIC CHARACTERISTICS APT8024B2_LFLL Note: Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC PDM SINGLE PULSE ZθJC, THERMAL IMPEDANCE (°C/W) 10-5 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 0.25 0.20 0.15 0.10 0.05 0.5 0.1 0.3 0.7 D = 0.9 0.05 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS THERMAL CHARACTERISTICS Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current 1 (Body Diode) Diode Forward Voltage 2 (VGS = 0V, IS = -31A) Peak Diode Recovery dv/dt 5 Reverse Recovery Time (IS = -31A, di/dt = 100A/µs) Reverse Recovery Charge (IS = -ID 31A, di/dt = 100A/µs) Peak Recovery Current (IS = -31A, di/dt = 100A/µs) Symbol IS ISM VSD dv/dt trr Qrr IRRM UNIT Amps Volts V/ns ns µC Amps MIN TYP MAX 124 1.3 Tj = 25°C 300 Tj = 125°C 600 Tj = 25°C 2.0 Tj = 125°C 6.7 Tj = 25°C 13 Tj = 125°C 22 Symbol RθJC RθJA MIN TYP MAX 0.22 UNIT °C/W Characteristic Junction to Case Junction to Ambient

1 Repetitive Rating: Pulse width limited by maximum junction

2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%

3 See MIL-STD-750 Method 3471

4 Starting T j = +25°C, L = 2.00mH, RG = 25Ω, Peak IL = 31A 5 dv/dt numbers reflect the limitations of the test circuit rather than the device itself. IS ≤ -ID31A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C 6 Eon includes diode reverse recovery. See figures 18, 20. APT Reserves the right to change, without notice, the specifications and information contained herein. Symbol Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 400V ID = 31A @ 25°C RESISTIVE SWITCHING VGS = 15V VDD = 400V ID = 31A @ 25°C RG = 0.6Ω INDUCTIVE SWITCHING @ 25°C VDD = 533V, VGS = 15V ID = 31A, RG = 5Ω INDUCTIVE SWITCHING @ 125°C VDD = 533V VGS = 15V ID = 31A, RG = 5Ω MIN TYP MAX 4670 860 155 160 105 645 525 1040 625 UNIT pF nC ns µJ