APT77H60J MICROSEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

ISOTOP® file # E145592 "UL Recognized" G S S D Absolute Maximum Ratings Thermal and Mechanical Characteristics G D S Unit A V mJ A Unit W °C/W V oz g in·lbf N·m Ratings 445 ±30 3350 Min Typ Max 960 0.13 0.15 -55 150 2500 1.03 29.2 1.1 Parameter Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C Pulsed Drain Current 1 Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive Characteristic Total Power Dissipation @ TC = 25°C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range RMS Voltage (50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) Package Weight Terminals and Mounting Screws. Symbol ID IDM VGS EAS IAR Symbol PD RθJC RθCS TJ,TSTG VIsolation WT Torque TYPICAL APPLICATIONS

  • ZVS phase shifted and other full bridge
  • Half bridge
  • UPS
  • Welding
  • Solar inverters
  • Telecom rectifiers

FEATURES

  • Fast switching with low EMI
  • Very Low t rr for maximum reliability
  • Ultra low C rss for improved noise immunity
  • Low gate charge
  • Avalanche energy rated
  • RoHS compliant APT77H60J APT77H60J 600V, 77A, 0.065Ω Max, trr ≤300ns N-Channel Ultrafast Recovery FREDFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for maximum reliability in ZVS phase shifted bridge and other circuits through much reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Microsemi Website - http://www.microsemi.com 050-8152 Rev A 6-2007 Single die FREDFET

Static Characteristics TJ = 25°C unless otherwise specified Source-Drain Diode Characteristics Dynamic Characteristics TJ = 25°C unless otherwise specified 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25°C, L = 1.86mH, RG = 2.2Ω, IAS = 60A. 3 Pulse test: Pulse Width < 380µs, duty cycle < 2%. 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 C o(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of V DS less than V(BR)DSS, use this equation: Co(er) = -2.32E-7/VDS^2 + 9.75E-8/VDS + 3.64E-10. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein. G D S Unit V V/°C Ω V mV/°C µA nA Unit S pF nC ns Unit A V ns µC A V/ns Min Typ Max 600 0 .57 0.050 0.065 3 4 5 -10 100 1000 ±100 Min Typ Max 115 24000 245 2200 1170 605 600 130 250 135 155 410 125 Min Typ Max 445 1.0 260 300 460 550 2.08 5.54 11.6 17.8 Test Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 250µA VGS = 10V, ID = 60A VGS = VDS, ID = 5mA VDS = 600V T J = 25°C VGS = 0V T J = 125°C VGS = ±30V Test Conditions VDS = 50V, ID = 60A VGS = 0V, VDS = 25V f = 1MHz VGS = 0V, VDS = 0V to 400V VGS = 0 to 10V, ID = 60A, VDS = 300V Resistive Switching VDD = 400V, ID = 60A RG = 2.2Ω 6 , VGG = 15V Test Conditions MOSFET symbol showing the integral reverse p-n junction diode (body diode) ISD = 60A, TJ = 25°C, VGS = 0V TJ = 25°C TJ = 125°C ISD = 60A 3 T J = 25°C diSD/dt = 100A/µs T J = 125°C VDD = 100V T J = 25°C TJ = 125°C ISD ≤ 60A, di/dt ≤1000A/µs, VDD = 400V, TJ = 125°C Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source On Resistance 3 Gate-Source Threshold Voltage Threshold Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Source Leakage Current Parameter Forward Transconductance Input Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance, Charge Related Effective Output Capacitance, Energy Related Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Peak Recovery dv/dt Symbol VBR(DSS) ∆VBR(DSS)/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS Symbol gfs Ciss Crss Coss Co(cr) Co(er) Qg Qgs Qgd td(on) tr td(off) tf Symbol IS ISM VSD trr Qrr Irrm dv/dt 050-8152 Rev A 6-2007 APT77H60J