APT75GT120JU3 MICROSEMI | Alldatasheet

Document overview

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Technical content

Features

  • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated
  • ISOTOP® Package (SOT-227)
  • Very low stray inductance
  • High level of integration Benefits
  • Low conduction losses
  • Stable temperature behavior
  • Very rugged
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • Easy paralleling due to positive TC of VCEsat
  • RoHS Compliant ISOTOP® Buck chopper Trench + Field Stop IGBT® A C G E

APT75GT120JU3 – Rev 1 June, 2006 www.microsemi.com 2 - 7 All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit ICES Zero Gate Voltage Collector Current V GE = 0V, VCE = 1200V 5 mA Tj = 25°C 1.4 1.7 2.1 VCE(on) Collector Emitter on Voltage VGE =15V IC = 75A Tj = 125°C 2.0 V VGE(th) Gate Threshold Voltage V GE = VCE, IC = 3mA 5.0 6.5 V IGES Gate – Emitter Leakage Current V GE = ±20V, VCE = 0V 500 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 5340 Coes Output Capacitance 280 Cres Reverse Transfer Capacitance VGE = 0V VCE = 25V f = 1MHz 240 pF Td(on) Turn-on Delay Time 260 Tr Rise Time 30 Td(off) Turn-off Delay Time 420 Tf Fall Time Resistive Switching (25°C) VGE = 15V VBus = 600V IC = 75A RG = 4.7Ω 70 ns Td(on) Turn-on Delay Time 290 Tr Rise Time 45 Td(off) Turn-off Delay Time 520 Tf Fall Time 90 ns Eon Turn-on Switching Energy 7 Eoff Turn-off Switching Energy Inductive Switching (125°C) VGE = 15V VBus = 600V IC = 75A RG = 4.7Ω 9.5 mJ

APT75GT120JU3 – Rev 1 June, 2006 www.microsemi.com 3 - 7 Chopper diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit IF = 30A 2.0 2.5 IF = 60A 2.3 VF Diode Forward Voltage IF = 30A T j = 125°C 1.8 V VR = 1200V T j = 25°C 250 IRM Maximum Reverse Leakage Current VR = 1200V T j = 125°C 500 µA CT Junction Capacitance V R = 200V 32 pF Reverse Recovery Time IF=1A,VR=30V di/dt =100A/µs Tj = 25°C 31 Tj = 25°C 370 trr Reverse Recovery Time Tj = 125°C 500 ns Tj = 25°C 5 IRRM Maximum Reverse Recovery Current Tj = 125°C 12 A Tj = 25°C 660 Qrr Reverse Recovery Charge IF = 30A VR = 800V di/dt =200A/µs Tj = 125°C 3450 nC trr Reverse Recovery Time 220 ns Qrr Reverse Recovery Charge 4650 nC IRRM Maximum Reverse Recovery Current IF = 30A VR = 800V di/dt =1000A/µs Tj = 125°C 37 A Thermal and package characteristics Symbol Characteristic Min Typ Max Unit IGBT 0.3 RthJC Junction to Case Thermal Resistance Diode 1.1 RthJA Junction to Ambient (IGBT & Diode) 20 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ,TSTG Storage Temperature Range -55 150 TL Max Lead Temp for Soldering:0.063” from case for 10 sec 300 °C Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) 1.5 N.m Wt Package Weight 29.2 g Typical IGBT Performance Curve 0 20 40 60 80 100 120 IC (A) Fmax, Operating Frequency (kHz) VCE=600V D=5 0% RG=4.7Ω TJ=125°C Ope rating Fre quency vs Colle ctor Current

APT75GT120JU3 – Rev 1 June, 2006 www.microsemi.com 4 - 7 Output Characteristics (VGE=15V) TJ=25°C TJ=125°C 100 125 150 01234 V CE (V) IC (A) Output Characteristics VGE=15V VGE=13VVGE=17V VGE=9V 100 125 150 01234 V CE (A) IC (A) TJ = 125°C Transfert Characteristics TJ=25°C TJ=125°C 100 125 150 56789 1 0 1 1 1 2 V GE (V) IC (A) Energy losses vs Collector Current Eon Eoff 2.5 7.5 12.5 17.5 0 25 50 75 100 125 150 IC (A) E (mJ) VCE = 600V VGE = 15V RG = 4.7Ω TJ = 125°C Eon Eoff 0 4 8 12 16 20 24 28 32 Gate Resistance (ohms) E (mJ) VCE = 600V VGE =15V IC = 75A TJ = 125°C Switching Energy Losses vs Gate Resistance Reverse Safe Operating Area 100 125 150 175 200 0 400 800 1200 1600 VCE (V) IC (A) VGE=15V TJ=125°C RG=4.7Ω maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.9 0.7 0.5 0.3 0.1

0.05 Single Pulse

0.05 0.1 0.15 0.2 0.25 0.3 0.35 rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) IGBT

APT75GT120JU3 – Rev 1 June, 2006 www.microsemi.com 5 - 7 Typical Diode Performance Curve

APT75GT120JU3 – Rev 1 June, 2006 www.microsemi.com 6 - 7

APT75GT120JU3 – Rev 1 June, 2006 www.microsemi.com 7 - 7 SOT-227 (ISOTOP®) Package Outline 31.5 (1.240) 31.7 (1.248) Dimensions in Millimeters and (Inches) 7.8 (.307) 8.2 (.322) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 14.9 (.587) 15.1 (.594) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) 0.75 (.030) 0.85 (.033) 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 3.3 (.129) 3.6 (.143) Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal. ISOTOP® is a registered trademark of ST Microelectronics NV Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. Emitter Gate Collector Anode