APT75GT120JU3 ISC | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 4
Technical content
TrenchgateField-StopIGBT APT75GT120JU3 www.iscsemi.com 2023-9-121
DESCRIPTION
- Verylowstray inductance
- Highlevelofintegration
- HighInputImpedance
- FastSwitching
APPLICATIONS
- ACandDCmotorcontrol
- SwitchedModePower Supplies ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-EmitterVoltage 1200 V VGES Gate-EmitterVoltage ±20 V IC CollectorCurrent-Continuous @TC=25℃ 100 A IC CollectorCurrent-Continuous @TC=80℃ 75 A ICM PulsedCollectorCurrent 175 A IFAV MaximumAverageForwardCurrent 27 A IFRMS RMS ForwardCurrent(Squarewave,50%duty) 34 A PD PowerDissipation, TC=25℃ 416 W Tj Max.OperatingJunctionTemperature@TC=80℃ 150 ℃ Tstg StorageTemperatureRange -55~150 ℃
TrenchgateField-StopIGBT APT75GT120JU3 www.iscsemi.com 2023-9-122 THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCase IGBT 0.3 ℃/W Rthj-c ThermalResistance,JunctiontoCase Diode 1.1 ℃/W ELECTRICALCHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VCES Collector-EmitterBreakdownVoltage VGE=0;IC=5mA 1200 -- -- V VGE(TH) Gate-EmitterThresholdVoltage VGE=VCE; IC=3mA 5.0 -- 6.5 V VCE(on) Collector-EmitteronVoltage IC=75A;VCE=15V, VCE(on) Collector-Emitter on Voltage IC=75A;VCE=15V, ICES ZeroGateVoltageCollectorCurrent VCE=1200V;VGE=0 -- -- 5 mA IGES Gate-EmitterLeakageCurrent VGE=±20V;VCE=0 -- -- 500 nA Cies InputCapacitance VGS =0V, VCS =25V, f=1.0MHz 5340 pFCoes OutputCapacitance 280 Cres ReverseTransferCapacitance 240 td(on) Turn-onDelayTime VGE =15V, IC=75A, VCE =600V, RG=4.7Ω TJ=25℃ 260 ns tr Turn-onRiseTime 30 td(off) Turn-offDelayTime 420 tf Turn-offFallTime 70
TrenchgateField-StopIGBT APT75GT120JU3 www.iscsemi.com 2023-9-123 td(on) Turn-onDelayTime VGE =15V, IC=75A, VCE =600V, RG=4.7Ω TJ=125℃ 290 ns tr Turn-onRiseTime 45 td(off) Turn-offDelayTime 520 tf Turn-offFallTime 90 Eon Turn-onswitchinglosses 7 Mj Eoff Turn-offswitchinglosses 9.5 DIODE RATINGSANDCHARACTERISTICS(TC=25℃ UNLESSOTHERWISESPECIFIED) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VF DiodeForwardVoltage IF=30A;TC=25℃ -- 2.0 2.5 V VF DiodeForwardVoltage IF=60A;TC=25℃ -- 2.3 -- V VF DiodeForwardVoltage IF=30A;TC=125℃ -- 1.8 -- V IRM MaximumReverseLeakageCurrent VR=1200V,TC=25℃ -- 250 uA IRM MaximumReverseLeakageCurrent VR=1200V,TC=125℃ 500 uA trr ReverseRecoveryTime IF=1A;-di/dt=100A/us; VR=30V;TJ=25℃ -- 31 -- ns IRRM MaximumReverseRecoveryCurrent IF=30A;-di/dt=200A/us; VR=800V;TJ=25℃ 5 A trr ReverseRecoveryTime 370 ns Qrr ReverseRecoveryCharge 660 nC IRRM MaximumReverseRecoveryCurrent IF=30A;-di/dt=1000A/us; VR=800V;TJ=125℃ 37 A trr ReverseRecoveryTime 220 ns Qrr ReverseRecoveryCharge 4650 nC
TrenchgateField-StopIGBT APT75GT120JU3 www.iscsemi.com 2023-9-124 PackageOutline ProductDisclaimer ISCreserves the rights tomakechangesof thecontent hereinthe datasheetatany timewithout notification.The informationcontained hereinis presentedonly as aguidefortheapplications ofour products. ISCproducts are intendedforusagein generalelectronic equipment.Theproducts are notdesigned for usein equipmentwhichrequire specialized qualityand/or reliability,orin equipment whichcould have applications inhazardous environments,aerospaceindustry,or medicalfield.Pleasecontactusif you intend ourproducts tobe used inthese specialapplications. ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability arising from the application or use of any products, and specifically disclaimsany and allliability,includingwithout limitation special,consequential orincidental damages.