APT75GT120JU3 ADPOW | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 7

Technical content

Features

/g183/g32Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated /g183/g32ISOTOP ® Package (SOT-227) /g183/g32Very low stray inductance /g183/g32High level of integration Benefits /g183/g32Low conduction losses /g183/g32Stable temperature behavior /g183/g32Very rugged /g183/g32Direct mounting to heatsink (isolated package) /g183/g32Low junction to case thermal resistance /g183/g32Easy paralleling due to positive TC of VCEsat ISOTOP® Buck chopper Trench IGBT A CG E

APT75GT120JU3 – Rev 0 April, 2004 APT website – http://www.advancedpower.com 2-7 All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit BVCES Collector - Emitter Breakdown Voltage V GE = 0V, IC = 5mA 1200 V ICES Zero Gate Voltage Collector Current V GE = 0V, VCE = 1200V 5 mA Tj = 25°C 1.4 1.7 2.1 VCE(on) Collector Emitter on Voltage VGE =15V IC = 75A Tj = 125°C 2.0 V VGE(th) Gate Threshold Voltage V GE = VCE, IC = 3mA 5.0 6.5 V IGES Gate – Emitter Leakage Current V GE = ±20V, VCE = 0V 500 nA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Cies Input Capacitance 5340 Coes Output Capacitance 280 Cres Reverse Transfer Capacitance VGE = 0V VCE = 25V f = 1MHz 240 pF Td(on) Turn-on Delay Time 260 Tr Rise Time 30 Td(off) Turn-off Delay Time 420 Tf Fall Time Resistive Switching (25°C) VGE = 15V VBus = 600V IC = 75A RG = 4.7/g87 70 ns Td(on) Turn-on Delay Time 290 Tr Rise Time 45 Td(off) Turn-off Delay Time 520 Tf Fall Time 90 ns Eon Turn-on Switching Energy 7 Eoff Turn-off Switching Energy Inductive Switching (125°C) VGE = 15V VBus = 600V IC = 75A RG = 4.7/g87 9.5 mJ

APT75GT120JU3 – Rev 0 April, 2004 APT website – http://www.advancedpower.com 3-7 Diode ratings and characteristics Symbol Characteristic Test Conditions Min Typ Max Unit IF = 30A 2.0 2.5 IF = 60A 2.3 VF Diode Forward Voltage IF = 30A T j = 125°C 1.8 V VR = 1200V T j = 25°C 250 IRM Maximum Reverse Leakage Current VR = 1200V T j = 125°C 500 µA CT Junction Capacitance V R = 200V 32 pF Reverse Recovery Time IF=1A,VR=30V di/dt =100A/µs Tj = 25°C 31 Tj = 25°C 370 trr Reverse Recovery Time Tj = 125°C 500 ns Tj = 25°C 5 IRRM Maximum Reverse Recovery Current Tj = 125°C 12 A Tj = 25°C 660 Qrr Reverse Recovery Charge IF = 30A VR = 800V di/dt =200A/µs Tj = 125°C 3450 nC trr Reverse Recovery Time 220 ns Qrr Reverse Recovery Charge 4650 nC IRRM Maximum Reverse Recovery Current IF = 30A VR = 800V di/dt =1000A/µs Tj = 125°C 37 A Thermal and package characteristics Symbol Characteristic Min Typ Max Unit IGBT 0.3 RthJC Junction to Case Diode 1.1 RthJA Junction to Ambient (IGBT & Diode) 20 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ,TSTG Storage Temperature Range -55 150 TL Max Lead Temp for Soldering:0.063” from case for 10 sec 300 °C Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) 1.5 N.m Wt Package Weight 29.2 g Typical IGBT Performance Curve 0 20 40 60 80 100 120 I C (A) Fmax, Operating Frequency (kHz) VCE=600V D=50% R G=4.7Ω TJ=125°C Operating Frequency vs Collector Current

APT75GT120JU3 – Rev 0 April, 2004 APT website – http://www.advancedpower.com 4-7 Output Characteristics (VGE=15V) TJ=25°C TJ=125°C 100 125 150 01234 V CE (V) IC (A) Output Characteristics VGE=15V VGE=13VVGE=17V VGE=9V 100 125 150 01234 V CE (A) IC (A) TJ = 125°C Transfert Characteristics TJ=25°C TJ=125°C 100 125 150 56789 1 0 1 1 1 2 V GE (V) IC (A) Energy losses vs Collector Current Eon Eoff 2.5 7.5 12.5 17.5 0 25 50 75 100 125 150 IC (A) E (mJ) VCE = 600V VGE = 15V RG = 4.7Ω TJ = 125°C Eon Eoff 0 4 8 1 21 62 02 42 83 2 Gate Resistance (ohms) E (mJ) VCE = 600V VGE =15V IC = 75A TJ = 125°C Switching Energy Losses vs Gate Resistance Reverse Safe Operating Area 100 125 150 175 200 0 400 800 1200 1600 V CE (V) IC (A) VGE=15V TJ=125°C RG=4.7Ω maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.9 0.7 0.5 0.3 0.1

0.05 Single Pulse

0.05 0.1 0.15 0.2 0.25 0.3 0.35 rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) IGBT

APT75GT120JU3 – Rev 0 April, 2004 APT website – http://www.advancedpower.com 5-7 Typical Diode Performance Curve

APT75GT120JU3 – Rev 0 April, 2004 APT website – http://www.advancedpower.com 6-7

APT75GT120JU3 – Rev 0 April, 2004 APT website – http://www.advancedpower.com 7-7 SOT-227 (ISOTOP®) Package Outline 31.5 (1.240) 31.7 (1.248) Dimensions in Millimeters and (Inches) 7.8 (.307) 8.2 (.322) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 14.9 (.587) 15.1 (.594) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)0.75 (.030) 0.85 (.033) 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 3.3 (.129) 3.6 (.143) Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal. ISOTOP® is a Registered Trademark of SGS Thomson APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign pa tents pending. All Rights Reserved. Emitter Gate CollectorAnode