APT75GP120JDQ3 ADPOW | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 9

Technical content

APT75GP120JDQ3TYPICAL PERFORMANCE CURVES MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 1250µA) Gate Threshold Voltage (VCE = VGE, IC = 2.5mA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, IC = 75A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, IC = 75A, Tj = 125°C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 2 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 2 Gate-Emitter Leakage Current (VGE = ±20V) Symbol V(BR)CES VGE(TH) VCE(ON) ICES IGES Units Volts µA nA Symbol VCES VGE IC1 IC2 ICM RBSOA PD TJ,TSTG TL APT75GP120JDQ3 1200 ±20 128 300 300A @ 960V 543 -55 to 150 300 UNIT Volts Amps Watts Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 @ TC = 150°C Reverse Bias Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. APT Website - http://www.advancedpower.com CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. MIN TYP MAX 1200 3 4.5 6 3.3 3.9 3.0 1250 5500 ± 100 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.

  • Low Conduction Loss • 50 kHz operation @ 800V, 20A
  • Low Gate Charge • 20 kHz operation @ 800V, 44A
  • Ultrafast Tail Current shutoff • RBSOA Rated POWER MOS 7 IGBT 1200V APT75GP120JDQ3 C E G SOT-227 ISOTOP® file # E145592 "UL Recognized" G E E C

1 Repetitive Rating: Pulse width limited by maximum junction temperature.

2 For Combi devices, Ices includes both IGBT and FRED leakages

3 See MIL-STD-750 Method 3471. 4 Eon1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 E off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) APT Reserves the right to change, without notice, the specifications and information contained herein. DYNAMIC CHARACTERISTICS Symbol Cies Coes Cres VGEP Qg Qge Qgc RBSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 600V IC = 75A TJ = 150°C, RG = 5Ω, VGE = 15V, L = 100µH,VCE = 960V Inductive Switching (25°C) VCC = 600V VGE = 15V IC = 75A RG = 5Ω TJ = +25°C Inductive Switching (125°C) VCC = 600V VGE = 15V IC = 75A RG = 5Ω TJ = +125°C Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge 3 Gate-Emitter Charge Gate-Collector ("Miller") Charge Reverse Bias Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy 4 Turn-on Switching Energy (Diode) 5 Turn-off Switching Energy 6 Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy 4 4 Turn-on Switching Energy (Diode) 55 Turn-off Switching Energy 6 MIN TYP MAX 7035 460 7.5 320 140 300 165 1620 4100 2500 245 115 1620 5850 4820 UNIT pF V nC A ns µJ ns µJ THERMAL AND MECHANICAL CHARACTERISTICS UNIT °C/W gm Volts MIN TYP MAX .23 .56 29.2 2500 Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) Symbol RθJC RθJC WT VIsolation

APT75GP120JDQ3TYPICAL PERFORMANCE CURVES Characteristic / Test Conditions Maximum Average Forward Current (TC = 105°C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) Symbol IF(AV) IF(RMS) IFSM Symbol VF Characteristic / Test Conditions IF = 75A Forward Voltage IF = 150A IF = 75A, TJ = 125°C STATIC ELECTRICAL CHARACTERISTICS UNIT Amps UNIT Volts MIN TYP MAX 2.8 3.48 2.17 APT75GP120JDQ3 540 DYNAMIC CHARACTERISTICS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE MIN TYP MAX- - 60 - 265 - 560 - 5 - - 350 - 2890 - 13 - - 150 - 4720 - - 40 UNIT ns nC Amps ns nC Amps ns nC Amps Characteristic Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Test Conditions IF = 60A, diF/dt = -200A/µs VR = 800V, TC = 25°C IF = 60A, diF/dt = -200A/µs VR = 800V, TC = 125°C IF = 60A, diF/dt = -1000A/µs VR = 800V, TC = 125°C IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C FIGURE 25b, TRANSIENT THERMAL IMPEDANCE MODEL ZθJC, THERMAL IMPEDANCE (°C/W) 10-5 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 25a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 0.60 0.50 0.40 0.30 0.20 0.10 0.5 SINGLE PULSE0.1 0.3 0.7 0.9

0.05 Peak TJ = PDM x ZθJC + TC

Duty Factor D = t1/t2 PDM Note: 0.148 0.238 0.174 0.006 0.0910 0.524 Power (watts) Junction temp. (°C) RC MODEL Case temperature. (°C)

diF/dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Qrr - Area Under the Curve Defined by IRRM and trr. line through IRRM and 0.25 IRRM passes through zero. Figure 33. Diode Test Circuit

0.25 IRRM

ISOTOP® is a Registered Trademark of SGS Thomson. for either Emitter/Anode terminal.