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Technical content
The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies.
- Low Conduction Loss • 50 kHz operation @ 800V, 20A
- Low Gate Charge • 20 kHz operation @ 800V, 44A
- Ultrafast Tail Current shutoff • RBSOA rated MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com STATIC ELECTRICAL CHARACTERISTICS MIN TYP MAX 1200 3 4.5 6 3.3 3.9 3.0 1000 5000 ±100 Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 1000µA) Gate Threshold Voltage (VCE = VGE, IC = 2.5mA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, IC = 75A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, IC = 75A, Tj = 125°C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 2 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 2 Gate-Emitter Leakage Current (VGE = ±20V) Symbol BVCES VGE(TH) VCE(ON) ICES IGES UNIT Volts µA nA Symbol VCES VGE VGEM IC1 IC2 ICM RBSOA PD TJ,TSTG TL APT75GP120J 1200 ±20 ±30 128 300 300A @ 960V 543 -55 to 150 300 UNIT Volts Amps Watts Parameter Collector-Emitter Voltage Gate-Emitter Voltage Gate-Emitter Voltage Transient Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 @ TC = 25°C Reverse Bias Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. POWER MOS 7 IGBT G C E SOT-227 G E E C ISOTOP® "UL Recognized"
APT75GP120JDYNAMIC CHARACTERISTICS Symbol Cies Coes Cres VGEP Qg Qge Qgc RBSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 600V IC = 75A TJ = 150°C, RG = 5Ω, VGE = 15V, L = 100µH,VCE = 960V Inductive Switching (25°C) VCC = 600V VGE = 15V IC = 75A RG = 5Ω TJ = +25°C Inductive Switching (125°C) VCC = 600V VGE = 15V IC = 75A RG = 5Ω TJ = +125°C MIN TYP MAX 7035 460 7.5 320 140 300 163 1620 4100 2500 244 115 1620 5850 4820 UNIT pF V nC A ns µJ ns µJ UNIT °C/W gm MIN TYP MAX .23 N/A 29.2 Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight Symbol RΘ JC RΘ JC WT THERMAL AND MECHANICAL CHARACTERISTICS 1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I ces includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471. on1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5E on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switchi ng loss. A Combi device is used for the clamping diode as shown in the E on2 test circuit. (See Figures 21, 22.) 6E off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) APT Reserves the right to change, without notice, the specifications and information contained herein. Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge Gate-Emitter Charge Gate-Collector ("Miller") Charge Reverse Bias Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy 4 Turn-on Switching Energy (Diode) 5 Turn-off Switching Energy 6 Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy 4 Turn-on Switching Energy (Diode) 5 Turn-off Switching Energy 6