APT75GN60LDQ3 ISC | Alldatasheet
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Technical content
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DESCRIPTION
- 600V Field Stop
- Trench Gate:LowVCE(on)
- EasyParalleling
APPLICATIONS
- SMPS, UPS
- Inductive Heating
- SolarInverters
- MptorDrives ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER VALUE UNIT VCES Collector-EmitterVoltage 600 V VGES Gate-EmitterVoltage ±30 V IC CollectorCurrent-Continuous @TC=25℃ 155 A IC CollectorCurrent-Continuous @TC=110℃ 93 A ICM PulsedCollectorCurrent 225 A PD PowerDissipation@TC=25℃ 536 W Tj OperatingJunctionTemperature -55~175 ℃ Tstg StorageTemperatureRange -55~175 ℃ TO-264Package
www.iscsemi.com 2 THERMALCHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rthj-c ThermalResistance,JunctiontoCaseforIGBT 0.28 ℃/W Rthj-c ThermalResistance,JunctiontoCaseforDiode 0.34 ℃/W STATICCHARACTERISTICS（TJ =25 °Cunlessotherwise specified） SYMBOL PARAMETER CONDITIONS MIN TYPE MAX UNIT VCES Collector-EmitterBreakdownVoltage VGE=0V,IC=4mA 600 -- -- V VGE(th) Gate-EmitterThresholdVoltage VGE=VCE, IC=1mA 5.0 -- 6.5 V VCE(on) Collector-EmitteronVoltage IC=75A,VCE=15V 1.05 -- 1.85 V ICES ZeroGateVoltageCollectorCurrent VCE=600V,VGE=0V -- -- 50 uA IGES Gate-EmitterLeakageCurrent VGE=±20V,VCE=0V -- -- ±600 nA PACKAGEOUTLINE(UNIT:mm)
www.iscsemi.com 3 PRODUCTDISCLAIMER ISCreserves the rightstomake changes ofthe contentherein the datasheetat anytimewithout notification.The information containedherein ispresented only asaguide forthe applicationsof our products. ISCproductsareintendedforusageingeneralelectronicequipment.Theproductsarenotdesignedfor usein equipment whichrequire specialized quality and/orreliability,orinequipmentwhichcouldhave applicationsin hazardous environments,aerospaceindustry,ormedicalfield.Pleasecontactus ifyou intend ourproducts to beusedin thesespecial applications. ISCmakes no warrantyor guaranteeregardingthe suitabilityof itsproducts forany particularpurpose, nordoes ISCassumeany liability arisingfromthe application oruse ofany products,and specifically disclaimsanyand allliability,including without limitationspecial,consequentialorincidentaldamages. Itis strictly prohibitedtoreprint orcopypartorallofthis datasheet withoutpermissionfrom ISC. IC()A