APT75GN120JDQ3 ADPOW | Alldatasheet
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APT75GN120JDQ3TYPICAL PERFORMANCE CURVES MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, IC = 3mA) Gate Threshold Voltage (VCE = VGE, IC = 3mA, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, IC = 75A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, IC = 75A, Tj = 125°C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25°C) 2 Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125°C) 2 Gate-Emitter Leakage Current (VGE = ±20V) Intergrated Gate Resistor Symbol V(BR)CES VGE(TH) VCE(ON) ICES IGES RG(int) Units Volts µA nA Ω Symbol VCES VGE IC1 IC2 ICM SSOA PD TJ,TSTG TL APT75GN120JDQ3 1200 ±30 124 225 225A @ 1200V 379 -55 to 150 300 UNIT Volts Amps Watts Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 110°C Pulsed Collector Current 1 Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. APT Website - http://www.advancedpower.com CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive V CE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses.
- 1200V Field Stop
- Trench Gate: Low V CE(on)
- Easy Paralleling
- Intergrated Gate Resistor: Low EMI, High Reliability Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS MIN TYP MAX 1200 5.0 5.8 6.5 1.4 1.7 2.1 2.0 200 TBD 600 1200V APT75GN120JDQ3 SOT-227 ISOTOP® file # E145592 "UL Recognized" G E E C C E G
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, Ices includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode. 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 E off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.) 7 R G is external gate resistance, not including RG(int) nor gate driver impedance. (MIC4452) APT Reserves the right to change, without notice, the specifications and information contained herein. DYNAMIC CHARACTERISTICS Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) tr td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCE = 600V IC = 75A TJ = 150°C, RG = 4.3Ω 7, VGE = 15V, L = 100µH,VCE = 1200V Inductive Switching (25°C) VCC = 800V VGE = 15V IC = 75A RG = 1.0Ω 7 TJ = +25°C Inductive Switching (125°C) VCC = 800V VGE = 15V IC = 75A RG = 1.0Ω 7 TJ = +125°C Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge 3 Gate-Emitter Charge Gate-Collector ("Miller") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy 4 Turn-on Switching Energy (Diode) 5 Turn-off Switching Energy 6 Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy 4 4 Turn-on Switching Energy (Diode) 55 Turn-off Switching Energy 66 MIN TYP MAX 4800 275 210 9.0 425 245 225 620 110 8045 9620 7640 725 200 8620 13000 11400 UNIT pF V nC A ns µJ ns µJ THERMAL AND MECHANICAL CHARACTERISTICS UNIT °C/W gm Volts MIN TYP MAX .33 .56 29.2 2500 Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) Symbol RθJC RθJC WT VIsolation
APT75GN120JDQ3TYPICAL PERFORMANCE CURVES Characteristic / Test Conditions Maximum Average Forward Current (TC = 85°C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms) Symbol IF(AV) IF(RMS) IFSM Symbol VF Characteristic / Test Conditions IF = 75A Forward Voltage IF = 150A IF = 75A, TJ = 125°C STATIC ELECTRICAL CHARACTERISTICS UNIT Amps UNIT Volts MIN TYP MAX 2.8 3.48 2.17 APT75GN120JDQ3 540 DYNAMIC CHARACTERISTICS MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE MIN TYP MAX- - 60 - 265 - 560 - 5 - - 350 - 2890 - 13 - - 150 - 4720 - - 40 UNIT ns nC Amps ns nC Amps ns nC Amps Characteristic Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Test Conditions IF = 60A, diF/dt = -200A/µs VR = 800V, TC = 25°C IF = 60A, diF/dt = -200A/µs VR = 800V, TC = 125°C IF = 60A, diF/dt = -1000A/µs VR = 800V, TC = 125°C IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C FIGURE 25b, TRANSIENT THERMAL IMPEDANCE MODEL ZθJC, THERMAL IMPEDANCE (°C/W) 10-5 10-4 10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 25a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 0.60 0.50 0.40 0.30 0.20 0.10 0.5 SINGLE PULSE0.1 0.3 0.7 D = 0.9
0.05 Peak TJ = PDM x ZθJC + TC
Duty Factor D = t1/t2 PDM Note: 0.148 0.238 0.174 0.006 0.0910 0.524 Power (watts) Junction temp. (°C) RC MODEL Case temperature. (°C)
ISOTOP® is a Registered Trademark of SGS Thomson. for either Emitter/Anode terminal. diF/dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Qrr - Area Under the Curve Defined by IRRM and trr. line through IRRM and 0.25 IRRM passes through zero. Figure 32. Diode Test Circuit