APT75GH120JD30

APT75GH120JD30 MICROCHIP | Alldatasheet

Document overview

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Technical content

Features

• Low conduction loss and saturation voltage
• Fast switching
• Low gate charge
• Ultrafast tail current shutoff
• Soft recovery
• Reverse-bias safe operating area (RBSOA) rated
• Easy to parallel
• RoHS compliant
• Isolated voltage to 2500 V, UL certified file E145592

1200 V, 75 A Fast Field-Stop IGBT 7 with DQ Diode

© 2025 Microchip Technology Inc. and its subsidiaries DS00006278A - 2 1. Device Specific ations This section shows the specifications of this device. 1.1. Absolute Maximum Ratings The following table shows the absolute maximum ratings of this device. TC = 25 °C unless otherwise specified. Table 1-1. Absolute Maximum Ratings Symbol Parameter Ratings Unit VCES Collector-emitter voltage 1200 V VGE Gate-emitter voltage ±20 IC1 Continuous collector current1 (TC = 25 °C) 118 A IC2 Continuous collector current1 (TC = 100 °C) 72 ICM Pulsed collector current2 (TC = 175 °C) 300 RBSOA Reverse-bias safe operating area (TJ = 150 °C, 960 V) 300 A PD Total power dissipation 492 W Notes: 1. Limited by maximum lead temperature. 2. Repetitive rating: Pulse width and case temperature are limited by the maximum junction temperature. 1.2. Thermal and Mechanical Char act eristics The following table shows the thermal and mechanical characteristics of this device. Table 1-2. Thermal and Mechanical Char act eristics Symbol Characteristic Min. Typ. Max. Unit RΘJC Junction-to-case thermal resistance (IGBT) 0.40 °C/W RΘJC Junction-to-case thermal resistance (diode) 1.1 °C/W TJ, TSTG Operating and storage junction temperature –40 175 °C VISOLATION RMS voltage (50 Hz–60 Hz sinusoidal waveform from terminals to mounting base for 1 minute) 2500 V τM Mounting torque, M3 screw for heat sink attachment (requires 2, not included)

0.8 N·m

τT Terminal screw torque, M4 screw (4 included) 1.1 Wt Package weight 29.2 g 1.3. Electrical Performance The following table shows the static characteristics of this device. TC = 25 °C unless otherwise specified. Table 1-3. St atic Char act eristics Symbol Characteristic Test Conditions Min. Typ. Max. Unit VGE(th) Gate threshold voltage VCE = VGE, IC = 1.2 mA 4.7 5.5 6.2 V VCE(on) Collector-emitter on voltage VGE = 15 V, IC = 75 A 1.7 2.15 VGE = 15 V, IC = 75 A, TJ = 175 °C 2.0 ICES Collector cut-off current1 VCE = 1200 V, VGE = 0 V 140 µA VCE = 1200 V, VGE = 0 V, TJ = 175 5100

© 2025 Microchip Technology Inc. and its subsidiaries DS00006278A - 3 Table 1-3. St atic Char act eristics (c ontinued) Symbol Characteristic Test Conditions Min. Typ. Max. Unit IGES Gate-emitter leakage current VGE = ±20 V ±100 nA Note: 1. I CES includes both IGBT and diode leakages. The following table shows the dynamic characteristics of this device. TC = 25 °C unless otherwise specified. Table 1-4. Dynamic Char act eristics Symbol Characteristic Test Conditions Min. Typ. Max. Unit Cies Input capacitance VGE = 0 V, VCE = 25 V, ƒ = 1 MHz 9835 pF Cres Reverse transfer capacitance 50 Coes Output capacitance 128 VGEP Gate-to-emitter plateau voltage VGE = 15 V, VCE = 960 V, IC = 75 A 7.5 V QG Total gate charge1 538 nC QGE Gate-emitter charge 66 QGC Gate-collector ("Miller") charge 198 RBSOA Reverse-bias safe operating area TJ = 175 °C, RG = 23 Ω, VGE = 15 V, VCE = 800 V, L = 100 µH 300 A td(on) Turn-on delay time VCC = 800 V, VGE =15 V, IC = 75 A, RG = 5 Ω, TJ = 25 °C 32 ns tr Current rise time 53 td(off) Turn-off delay time 311 tf Current fall time 46 Eon1 Turn-on switching energy2 4222 µJ Eon2 Turn-on switching energy3 5206 Eoff Turn-off switching energy4 2584 td(on) Turn-on delay time VCC = 800 V, VGE = 15 V, IC = 75 A, RG = 5 Ω, TJ = 125 °C 32 ns tr Current rise time 53 td(off) Turn-off delay time 354 tf Current fall time 45 Eon1 Turn-on switching energy2 4556 µJ Eon2 Turn-on switching energy3 7095 Eoff Turn-off switching energy4 3693 Notes: 1. See MIL-STD-750 Method 3471. 2. E on1 is the clamped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 1-19, Figure 1-20.) 3. E on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figure 1-19, Figure 1-20.) 4. E off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figure 1-19, Figure 1-21.)

© 2025 Microchip Technology Inc. and its subsidiaries DS00006278A - 6 Figure 1-11. Turn-On Energy Loss vs. Collector Current 0 80 100 12020 40 60 140 5000 10000 15000 20000 25000 30000 35000 40000 45000 50000 ICE, Collector-to-Emitter Current (A) VGE = 15 °C V, TJ = 25 Eon, Turn-on Energy Loss µJ) VGE = VGE = 10 V, TJ = 25 °C

10 V, TJ = 125 °C

VCE = 800 V 5 /uni03A9RG = °CVGE = 15 V, TJ = 125 Figure 1-12. T urn-Off Energy Loss vs. Collector Current 0 150 2500 5000 7500 10000 12500 °CTJ = 125 25 50 75 100 125 ICE, Collector-to-Emitter Current (A) TJ = 25 °C Eoff, Turn-off Energy Loss (µJ) VCE = 800 V /uni03A9 VGE = +15 V RG = 5 Figure 1-13. Switching Energy Losses vs. Gate Resistance 0 10 20 30 40 50 5000 10000 15000 20000 25000 30000 35000 RG, Gate Resistance (/uni03A9) Switching Energy Losses (/uni03BCJ) Eon, 75 A Eoff, 150 A VCE = 800 V VGE = +15 V TJ = 125 °C Eon, 75 A Eoff, 75 A Eoff, 37.5 A Eon, 37.5 A Figure 1-14. Switching Energy Losses vs. Junction Temperature Eoff, 75 A Eon, 75 A 0 25 50 75 100 125 2000 4000 6000 8000 10000 12000 14000 16000 18000 TJ, Junction Temperature (°C) Switching Energy Losses (/uni03BCJ) VCE = 800 V VGE = +15 V RG = 5 /uni03A9 Eon, 150 A Eon, 37.5 A Eoff, 37.5 A Eoff, 150 A Figure 1-15. Capacitance vs. Collect or -T o-Emitter Voltage 0 50 Cres 10 20 30 40 VCE, Collector-to-Emitter Voltage (V) Coes C, Capacitance pF) Cies 100 1000 10000 Figure 1-16. Reverse-bias Safe Oper ating Area 0 200 400 600 800 1000 1200 100 120 140 160 180 200 220 240 VCE, Collector-to-Emitter Voltage (V) IC, Collector Current (A)

© 2025 Microchip Technology Inc. and its subsidiaries DS00006278A - 8 Figure 1-21. T urn-off Switching Waveform and De finitions Gate Voltage, VGE Collector Voltage, VCE Collector Current, ICE

Device Specific ations: Ultrafast Soft Recovery Anti-P ar allel Diode Data Sheet © 2025 Microchip Technology Inc. and its subsidiaries DS00006278A - 9 2. Device Specific ations: Ultrafast Soft Recovery Anti-P ar allel Diode This section shows the specifications of the co-packaged, anti-parallel diode. 2.1. Absolute Maximum Ratings The following table shows the absolute maximum ratings of the anti-parallel diode. TC = 25 °C unless otherwise specified. Table 2-1. Absolute Maximum Ratings Symbol Parameter Ratings Unit IF(AV) Maximum average forward current (TC = 112 °C, duty cycle = 0.5) 40 A IF(RMS) RMS forward current (square wave, duty cycle = 0.5) 63 IFSM Non-repetitive forward surge current (TJ = 45 °C, 8.3 ms) 210 2.2. Electrical Performance The following table shows the static characteristics of the anti-parallel diode. TC = 25 °C unless otherwise specified. Table 2-2. St atic Char act eristics Symbol Characteristic Test Conditions Min. Typ. Max. Unit VF Forward voltage IF = 30 A 2.8 V IF = 60 A 3.4 IF = 30 A, TJ = 125 °C 2.1 The following table shows the dynamic characteristics of the anti-parallel diode. TC = 25 °C unless otherwise specified. Table 2-3. Dynamic Char act eristics Symbol Characteristic Test Conditions Min. Typ. Max. Unit trr Reverse recovery time IF = 1 A, diF/dt = –100 A/μs, VR = 30 V 26 ns trr Reverse recovery time IF = 40 A, diF/dt = –200 A/μs, VR = 800 V 350 Qrr Reverse recovery charge 570 nC IRRM Maximum reverse recovery current 4 A trr Reverse recovery time IF = 40 A, diF/dt = –200 A/μs, VR =

800 V, TC = 125 °C

Qrr Reverse recovery charge 2200 nC IRRM Maximum reverse recovery current 9 A trr Reverse recovery time IF = 40 A, diF/dt = –1000 A/μs, VR = Qrr Reverse recovery charge 3400 nC IRRM Maximum reverse recovery current 29 A 2.3. Typical Performance Curves Data for performance curves are characterized, not 100% tested.

© 2025 Microchip Technology Inc. and its subsidiaries DS00006278A - 12 3. Package Specific ation This section shows the package specification of this device. 3.1. Package Outline Drawing The following figure illustrates the SOT-227 package outline of this device. Figure 3-1. Package Outline Drawing 2 1 N=4 TOP VIEW END VIEW SIDE VIEW b D A1A2 A Ee2 c M4 HEX NUT

4 PLACES

The following table shows the SOT-227 dimensions and should be used in conjunction with the package outline drawing. Table 3-1. SOT-227 Dimensions Dimension Limits Dimensions (millimeters) Min. Max. Number of terminals N 4 Terminal pitch e1 14.9 15.1 Terminal pitch e2 12.6 12.8 Overall height A 11.8 12.2 Base plate thickness A1 1.95 2.14

© 2025 Microchip Technology Inc. and its subsidiaries DS00006278A - 13 Table 3-1. SOT-227 Dimensions (c ontinued) Dimension Limits Dimensions (millimeters) Min. Max. Molded package thickness A2 8.9 9.6 Overall length D 38.0 38.2 Molded package length D1 31.5 31.7 Mounting centers D2 30.1 30.3 Overall width E 25.2 25.4 Terminal width b 7.8 8.2 Terminal thickness c 0.75 0.85 Terminal slot width b1 4.1 4.3 Terminal slot length L1 4.8 4.9 Mounting hole diameter C1 4.0 4.2 Mounting slot width C2 4.0 4.2 Note: 1. Dimensioning and tolerancing per ASME Y14.5M. 3.2. Terminal Pinout The following figure illustrates the terminal pinout of this device. Figure 3-2. Terminal Pinout TERMINAL 4 TERMINAL 1 TERMINAL 3 TERMINAL 2 The following table shows the electrical signal terminal pinout of this device. Table 3-2. Electrical Signal Terminal Pinout Terminal Definition TERMINAL 1 Gate TERMINAL 2 Collector, Diode Cathode TERMINAL 3 Emitter, Diode Anode TERMINAL 4 Emitter, Diode Anode

Revision History

© 2025 Microchip Technology Inc. and its subsidiaries DS00006278A - 14 4. Revision History The revision history describes the changes that were implemented in the document. The changes are listed by revision, starting with the most current publication. Table 4-1. Revision History Revision Date Description A 12/2025 Document created.

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