APT75F50B2 MICROSEMI | Alldatasheet

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Thermal and Mechanical Characteristics G D S Single die FREDFET Unit A V mJ A Unit W °C/W oz g in·lbf N·m Ratings 230 ±30 1580 Min Typ Max 1040 0.12 0.11 -55 150 300 0.22 6.2 1.1 Parameter Continuous Drain Current @ TC = 25°C Continuous Drain Current @ TC = 100°C Pulsed Drain Current 1 Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive Characteristic Total Power Dissipation @ TC = 25°C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range Soldering Temperature for 10 Seconds (1.6mm from case) Package Weight Mounting Torque ( TO-264Package), 4.40 or M3 screw Symbol ID IDM VGS EAS IAR Symbol PD RθJC RθCS TJ,TSTG TL WT Torque TYPICAL APPLICATIONS

  • ZVS phase shifted and other full bridge
  • Half bridge
  • PFC and other boost converter
  • Buck converter
  • Single and two switch forward
  • Flyback

FEATURES

  • Fast switching with low EMI
  • Low trr for high reliability
  • Ultra low Crss for improved noise immunity
  • Low gate charge
  • Avalanche energy rated
  • RoHS compliant TO-264 T-Max® APT75F50B2 APT75F50L 500V, 75A, 0.075Ω Max, trr ≤310ns APT75F50B2 APT75F50L N-Channel FREDFET Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Microsemi Website - http://www.microsemi.com 050-8126 Rev C 05-2009

Static Characteristics TJ = 25°C unless otherwise specified Dynamic Characteristics TJ = 25°C unless otherwise specified Source-Drain Diode Characteristics 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25°C, L = 2.31mH, RG = 25Ω, IAS = 37A. 3 Pulse test: Pulse Width < 380µs, duty cycle < 2%. 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of V DS less than V(BR)DSS, use this equation: Co(er) = -1.65E-7/VDS^2 + 5.51E-8/VDS + 2.03E-10. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) Microsemi reserves the right to change, without notice, the specifications and information contained herein. G D S Unit V V/°C Ω V mV/°C µA nA Unit S pF nC ns Unit A V ns µC A V/ns Min Typ Max 500 0.60 0.064 0.075 2.5 4 5 -10 250 1000 ±100 Min Typ Max 11600 160 1250 725 365 290 130 120 Min Typ Max 230 1.0 310 570 1.48 3.85 11.3 16.6 Test Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 250µA VGS = 10V, ID = 37A VGS = VDS, ID = 2.5mA VDS = 500V TJ = 25°C VGS = 0V TJ = 125°C VGS = ±30V Test Conditions VDS = 50V, ID = 37A VGS = 0V, VDS = 25V f = 1MHz VGS = 0V, VDS = 0V to 333V VGS = 0 to 10V, ID = 37A, VDS = 250V Resistive Switching VDD = 333V, ID = 37A RG = 2.2Ω 6 , VGG = 15V Test Conditions MOSFET symbol showing the integral reverse p-n junction diode (body diode) ISD = 37A, TJ = 25°C, VGS = 0V TJ = 25°C T J = 125°C ISD = 37A 3 T J = 25°C VDD = 100V T J = 125°C diSD/dt = 100A/µs T J = 25°C T J = 125°C ISD ≤ 37A, di/dt ≤1000A/µs, VDD = 333V, TJ = 125°C Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source On Resistance 3 Gate-Source Threshold Voltage Threshold Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Source Leakage Current Parameter Forward Transconductance Input Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance, Charge Related Effective Output Capacitance, Energy Related Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Peak Recovery dv/dt Symbol VBR(DSS) ∆VBR(DSS)/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS Symbol gfs Ciss Crss Coss Co(cr) Co(er) Qg Qgs Qgd td(on) tr td(off) tf Symbol IS ISM VSD trr Qrr Irrm dv/dt 050-8126 Rev C 05-2009 APT75F50B2_L