APT75DF170HJ MICROSEMI | Alldatasheet

Document overview

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Technical content

Features

  • Ultra fast recovery times
  • Soft recovery characteristics
  • High blocking voltage
  • High current
  • Low leakage current
  • Very low stray inductance
  • High level of integration
  • ISOTOP® Package (SOT-227) Benefits
  • Outstanding performance at high frequency operation
  • Low losses
  • Low noise switching
  • Direct mounting to heatsink (isolated package)
  • Low junction to case thermal resistance
  • RoHS Compliant ISOTOP®Fast Diode Full Bridge Power Module

APT75DF170HJ – Rev 0 November, 2009 www.microsemi.com 2-3 All ratings @ Tj = 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit Tj = 25°C 1.8 2.2 VF Diode Forward Voltage I F = 75A Tj = 125°C 1.9 V Tj = 25°C 250 IRM Maximum Reverse Leakage Current V R = 1700V Tj = 125°C 500 µA Dynamic Characteristics Symbol Characteristic Test Conditions Min Typ Max Unit Tj = 25°C 385 trr Reverse Recovery Time Tj = 125°C 490 ns Tj = 25°C 19 Qrr Reverse Recovery Charge Tj = 125°C 31 µC Tj = 25°C 9 Err Reverse Recovery Energy IF = 75A VR = 900V di/dt = 800A/µs Tj = 125°C 18 mJ Thermal and package characteristics Symbol Characteristic Min Typ Max Unit RthJC Junction to Case Thermal resistance 0.5 RthJA Junction to Ambient 20 °C/W VISOL RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz 2500 V TJ,TSTG Storage Temperature Range -55 150 TL Max Lead Temp for Soldering:0.063” from case for 10 sec 300 °C Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) 1.5 N.m Wt Package Weight 29.2 g SOT-227 (ISOTOP®) Package Outline 31.5 (1.240) 31.7 (1.248) Dimensions in Millimeters and (Inches) 7.8 (.307) 8.2 (.322) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 14.9 (.587) 15.1 (.594) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) 0.75 (.030) 0.85 (.033) 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 3.3 (.129) 3.6 (.143) 3.30 (.130) 4.57 (.180)

APT75DF170HJ – Rev 0 November, 2009 www.microsemi.com 3-3 Typical Performance Curve Energy losses vs Collector Current 0 25 50 75 100 125 150 IF (A) Err (mJ) VCE = 900V VGE = - 15V TJ = 125°C maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.9 0.7 0.5 0.3 0.1

0.05 Single Pulse

0.1 0.2 0.3 0.4 0.5 0.6 rectangular Pulse Duration (Seconds) Thermal Impedance (°C/W) Diode Forward Characteristic of diode TJ=25°C TJ=125°C TJ=125°C 100 125 150 00 . 511 . 522 . 53 VF (V) IF (A) ISOTOP® is a registered trademark of ST Microelectronics NV Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.