APT6017WVR ADPOW | Alldatasheet

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G D S 050-5827 Rev B MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. UNIT Volts Amps Volts Watts W/°C Amps mJ UNIT Volts Amps Ohms µA nA Volts MIN TYP MAX 600 31.5 0.170 250 ±100 APT6017WVR 600 31.5 126 ±30 ±40 450 3.6 -55 to 150 300 31.5 2500 APT6017WVR 600V 31.5A 0.170 Ω Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.]) Zero Gate Voltage Drain Current (VDS = VDSS , VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS , VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS , ID = 2.5mA) Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ T C = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ T C = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 STATIC ELECTRICAL CHARACTERISTICS Symbol BV DSS ID(on) R DS(on) IDSS IGSS VGS(th) Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

  • Faster Switching • 100% Avalanche Tested
  • Lower Leakage • New TO-267 Package POWER MOS V ® TO-267 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 EUROPE Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 APT Website - http://www.advancedpower.com

1 Repetitive Rating: Pulse width limited by maximum junction3 See MIL-STD-750 Method 3471

temperature. 4 Starting Tj = +25°C, L = 5.04mH, RG = 25Ω , Peak IL = 31.5A

2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

APT Reserves the right to change, without notice, the specifications and information contained herein. DYNAMIC CHARACTERISTICS Symbol C iss C oss C rss Q g Q gs Q gd td(on) tr td(off) tf Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID[Cont.] @ 25°C VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25°C R G = 0.6Ω MIN TYP MAX 7500 9000 900 1260 320 480 315 475 45 70 125 190 15 30 13 26 45 70 51 0 UNIT pF nC ns APT6017WVR Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time 050-5827 Rev B SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS UNIT Amps Volts ns µC MIN TYP MAX 31.5 126 1.3 690 15.9 THERMAL CHARACTERISTICS Symbol R θJC R θJA MIN TYP MAX 0.28 UNIT °C/W Characteristic Junction to Case Junction to Ambient Symbol IS ISM VSD t rr Q rr Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current 1 (Body Diode) Diode Forward Voltage 2 (VGS = 0V, IS = -ID[Cont.]) Reverse Recovery Time (IS = -ID[Cont.], dlS /dt = 100A/µs) Reverse Recovery Charge (IS = -ID[Cont.], dlS /dt = 100A/µs) ZθJC, THERMAL IMPEDANCE ( °C/W) 10-5 10-4 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 0.3 0.1 0.05 0.01 0.005 0.001 Note: Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC PDM 0.1 SINGLE PULSE 0.02 0.05 0.2 D=0.5 0.01

VDS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE Q g, TOTAL GATE CHARGE (nC) V SD , SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGEVGS , GATE-TO-SOURCE VOLTAGE (VOLTS) I D , DRAIN CURRENT (AMPERES) IDR , REVERSE DRAIN CURRENT (AMPERES) C, CAPACITANCE (pF) 1 5 10 50 100 600 .01 .1 1 10 50 APT6017WVR TC =+25°C TJ =+150°C SINGLE PULSE 200 100 050-5827 Rev B OPERATION HERE LIMITED BY RDS (ON) TJ =+150°C T J =+25°C C rss APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 C oss C iss 30,000 10,000 5,000 1,000 500 100 200 100 VDS =300V VDS =480V ID = ID [Cont.] 10µS 1mS 10mS 100mS DC 100µS VDS =120V 5.00 (.197) BSC 1.80 (.071) 1.25 (.049) 20.45 (.805) 3.95 (.156) Drain Source Gate 1.65 (.065) 1.40 (.055) Dia. Typ.

3 Leads

20.32 (.800) 20.07 (.790) 19.05 (.750) 12.70 (.500) 24.15 (.951) 23.60 (.929) 10.23 (.403) 10.10 (.398) Dimensions in Millimeters and (Inches) 4.20 (.165) BSC 7.40 (.291) 6.60 (.260) 16.90 (.665) 16.40 (.646)