APT6013LLL

APT6013B2LL ADPOW | Alldatasheet

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ADVANCE TECHNICALINFORMATION Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.]) Zero Gate Voltage Drain Current (VDS = VDSS , VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS , VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS , ID = 2.5mA) 050-7053 Rev- 8-2001 MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ T C = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 UNIT Volts Amps Volts Watts W/°C Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol BV DSS ID(on) R DS(on) IDSS IGSS VGS(th) UNIT Volts Amps Ohms µA nA Volts MIN TYP MAX 600 0.130 100 500 ±100 APT6013 600 172 ±30 ±40 565 4.52 -55 to 150 300 2500 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 T-MAX ™ G D S TO-264 B2LL LLL Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. POWER MOS 7 TM APT6013B2LL APT6013LLL 600V 43A 0.130 W

• Lower Input Capacitance • Increased Power Dissipation
• Lower Miller Capacitance • Easier To Drive
• Lower Gate Charge, Qg • Popular T-MAX™ or TO-264 Package

DYNAMIC CHARACTERISTICS APT6013 B2LL - LLL 050-7053 Rev- 8-2001 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) 4.50 (.177) Max. 19.81 (.780) 20.32 (.800) 20.80 (.819) 21.46 (.845) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055) 5.45 (.215) BSC 2.87 (.113) 3.12 (.123) 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087) 2.59 (.102) 0.40 (.016) 0.79 (.031) Drain Source Gate These dimensions are equal to the TO-247 without the mounting hole. Drain 2-Plcs. 19.51 (.768) 20.50 (.807) 19.81 (.780) 21.39 (.842) 25.48 (1.003) 26.49 (1.043) 2.29 (.090) 2.69 (.106) 0.76 (.030) 1.30 (.051) 3.10 (.122) 3.48 (.137) 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 2.59 (.102) 3.00 (.118) 0.48 (.019) 0.84 (.033) Drain Source Gate Dimensions in Millimeters and (Inches) Drain 2.29 (.090) 2.69 (.106) 5.79 (.228) 6.20 (.244) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) T-MAX TM (B2) Package Outline TO-264 (L) Package Outline APT's devices are covered by one or more of the following U.S.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 ADVANCE TECHNICALINFORMATION Symbol C iss C oss C rss Q g Q gs Q gd td(on) tr td(off) tf Test Conditions VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID[Cont.] @ 25°C VGS = 15V VDD = 0.5 VDSS ID = ID[Cont.] @ 25°C R G = 0.6W MIN TYP MAX 5640 1010 129 UNIT pF nC ns Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current 1 (Body Diode) Diode Forward Voltage 2 (VGS = 0V, IS = -ID[Cont.]) Reverse Recovery Time (IS = -ID[Cont.], dlS /dt = 100A/µs) Reverse Recovery Charge (IS = -ID[Cont.], dlS /dt = 100A/µs) Peak Diode Recovery dv/dt 5 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS UNIT Amps Volts ns µC V/ns MIN TYP MAX 172 1.3 690 15.9

1 Repetitive Rating: Pulse width limited by maximum junction3 See MIL-STD-750 Method 3471

temperature. 4 Starting Tj = +25°C, L = 2.70mH, RG = 25W, Peak IL = 43A 2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2% 5d v/dt numbers reflect the limitations of the test circuit rather than the device itself. IS £ -ID [Cont.] di/dt £ 700A/µs VR £ VDSS TJ £ 150°C APT Reserves the right to change, without notice, the specifications and information contained herein. THERMAL CHARACTERISTICS Symbol R qJC R qJA MIN TYP MAX 0.22 UNIT °C/W Characteristic Junction to Case Junction to Ambient Symbol IS ISM VSD t rr Q rr dv/dt