APT5040CNR ADPOW | Alldatasheet

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N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS APT5040CNR 500V 13.0A 0.400 Ω 050-5016 Rev - G D S TO-254 Characteristic / Test Conditions Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA) On State Drain Current 2 (VDS > ID(on) x RDS(on) Max, VGS = 10V) Drain-Source On-State Resistance 2 (VGS = 10V, 0.5 ID[Cont.]) Zero Gate Voltage Drain Current (VDS = VDSS , VGS = 0V) Zero Gate Voltage Drain Current (VDS = 0.8 VDSS , VGS = 0V, TC = 125°C) Gate-Source Leakage Current (VGS = ±30V, VDS = 0V) Gate Threshold Voltage (VDS = VGS , ID = 1.0mA) MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ T C = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ T C = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 3 UNIT Volts Amps Volts Watts W/°C Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol BV DSS ID(on) R DS(on) IDSS IGSS VGS(th) UNIT Volts Amps Ohms µA nA Volts MIN TYP MAX 500 0.40 250 1000 ±100 APT5040CNR 500 ±30 ±40 150 1.2 -55 to 150 300 800 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W. Columbia Street Bend, Oregon 97702-1035 Phone: (541) 382-8028 FAX: (541) 388-0364 EUROPE Avenue J.F. Kennedy Bât B4 Parc Cadéra Nord F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 APT Website - http://www.advancedpower.com

  • Faster Switching • 100% Avalanche Tested • Popular TO-254 Package
  • Low Gate Charge • Similar to the 2N7228, JX2N7228 and JV2N7228

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS Test Conditions f = 1 MHz VGS = 0V VDS = 25V f = 1 MHz VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C VGS = 10V VDD = 0.5 VDSS ID = ID [Cont.] @ 25°C R G = 1.80Ω Characteristic Drain-to-Case Capacitance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol C DC C iss C oss C rss Q g Q gs Q gd td(on) tr td(off) tf DYNAMIC CHARACTERISTICS APT5040CNR MIN TYP MAX 15 22 1430 1800 330 465 130 200 71 105 8.7 12 37 55 14 28 21 42 44 66 15 30 UNIT pF nC ns 1 Repetitive Rating: Pulse width limited by maximum junction temperature. See Transient Thermal Impedance Curve. (Fig.1)

2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%

3 Starting Tj = +25°C, L = 9.47mH, RG = 25Ω , Peak IL = 13A APT Reserves the right to change, without notice, the specifications and information contained herein. Characteristic / Test Conditions Continuous Source Current (Body Diode) Pulsed Source Current 1 (Body Diode) Diode Forward Voltage 2 (VGS = 0V, IS = -ID [Cont.]) Reverse Recovery Time (IS = -ID [Cont.], dlS /dt = 100A/µs) Reverse Recovery Charge (IS = -ID [Cont.], dlS /dt = 100A/µs) Symbol IS ISM VSD t rr Q rr Symbol R θJC R θJA Characteristic Junction to Case Junction to Ambient UNIT Amps Volts ns µC MIN TYP MAX 1.3 296 592 4.4 8.8 UNIT W/°C MIN TYP MAX 0.80 THERMAL CHARACTERISTICS 050-5016 Rev - ZθJC, THERMAL IMPEDANCE ( °C/W) 10-5 10-4 10-3 10-2 10-1 1.0 10 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 1.0 0.5 0.1 0.05 0.01 0.005 0.001 Note: Duty Factor D = t1/t2 Peak TJ = PDM x ZθJC + TC PDM 0.1 SINGLE PULSE 0.02 0.05 0.2 D=0.5 0.01

C, CAPACITANCE (pF)I , REVERSE DRAIN CURRENT (AMPERES)DR I , DRAIN CURRENT (AMPERES)DV , GATE-TO-SOURCE VOLTAGE (VOLTS)GS Q g, TOTAL GATE CHARGE (nC) V SD , SOURCE-TO-DRAIN VOLTAGE (VOLTS) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE VDS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) V DS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE g 3.81 (.150) BSC 1.14 (.045) .89 (.035) Dia. Typ.

3 Leads

13.84 (.545) 13.59 (.535) 31.37 (1.235) 30.35 (1.195) 13.84 (.545) 3.53 (.139) 1.27 (.050) 1.02 (.040) 6.60 (.260) 6.32 (.249) 3.81 (.150) BSC 6.91 (.272) 6.81 (.268) Drain Source Gate Dia. 20.32 (.800) 16.89 (.665) Dimensions in Millimeters and (Inches) APT5040CNR TC =+25°C TJ =+150°C SINGLE PULSE 1µS 10µS 100µS 1mS 10mS OPERATION HERE LIMITED BY RDS (ON) 050-5016 Rev - DC ID = ID [Cont.] C rss C oss C iss TJ =+150°CT J =+25°C VDS =400V VDS =250V VDS =100V 1 5 10 50 100 500 0 10 20 30 40 50 0 20 40 60 80 100 0 0.5 1.0 1.5 2.0 10,000 1,000 100 100 0.5